r07ds0826ej0300 rev.3.00 page 1 of 3 oct 20, 2014 datasheet rjp1cs03dwt / rjp1cs03dwa 1250v - 30a - igbt application: inverter features ? low collector to emitter saturation voltage v ce(sat) = 1.8 v typ. (at i c = 30 a, v ge = 15 v, tc = 25 c) ? high speed switching ? short circuit withstands time (10 s min.) outline 1. gate 2. collector (the back) 3. emitter die: rjp1cs03dwt-80 wafer: rjp1cs03dwa-80 2 c 2 1 g e 3 1 3 3 absolute maximum ratings (tc = 25c unless otherwise noted ) item symbol ratings unit collector to emitter voltage v ces 1250 v gate to emitter voltage v ges 30 v collector current tc = 25c i c 60 a tc = 100c i c 30 a junction temperature tj 175 note1 c notes: 1. please use this device in the thermal conditions where the junction temperature does not exceed 175 c. igbt application note is disclosed about reliabili ty test and application condition up to tj=175 c. r07ds0826ej0300 rev.3.00 oct 20, 2014
rjp1cs03dwt / rjp1cs03dwa r07ds0826ej0300 rev.3.00 page 2 of 3 oct 20, 2014 electrical characteristics (datas below are measured values on a package configuration.) (tc = 25c unless otherwise noted) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 1 a v ce = 1250 v, v ge = 0 gate to emitter leak current i ges ? ? 1 a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 5.0 ? 6.8 v v ce = 10 v, i c = 1.0 ma collector to emitter saturation voltage v ce(sat) ? 1.80 2.25 v i c = 30 a, v ge = 15 v note2 input capacitance cies ? 3.2 ? nf v ce = 25 v v ge = 0 f = 1 mhz output capacitance coes ? 0.10 ? nf reveres transfer capacitance cres ? 0.07 ? nf switching time note3 t d(on) ? 20 ? ns v cc = 600 v i c = 30 a v ge = 15 v rg = 10 , tc = 150 c inductive load t r ? 20 ? ns t d(off) ? 250 ? ns t f ? 160 ? ns short circuit withstand time note4 t sc 10 ? ? s v cc 720 v , v ge = 15 v tc = 150 c notes: 2. pulse test. 3. switching time test circuit and waveform are shown below. 4. verified by design. switching time test circuit waveform diode clamp d.u.t rg l v cc t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c
rjp1cs03dwt / rjp1cs03dwa r07ds0826ej0300 rev.3.00 page 3 of 3 oct 20, 2014 die dimension illustration part of white part of dotted line part of gray note 1. note 2. the back of the chip is processed with au evaporation. note 3. recognition, target and any other patterns which are not related to igbt operation, may be changed without notice. definition al pattern bonding area final passivation 5.5 3.86 1.31 2.49 1.71 0.81 5.5 1.71 1.28 1.28 emitter bonding pad (1) emitter bonding pad (2) gate bonding pad unit: mm ordering information orderable part number rjp1cs03dwa-80#w0 rjp1cs03dwt-80#x0
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