u BLV10 description n-p-n silicon planar epitaxial transistor intended for use in class-a, b and c operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 v. the transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 v. it has a 3/8" flange envelope with a ceramic cap. all leads are isolated from the flange. quick reference data r.f. performance up to th = 25 c in an unneautralized common-emitter class-b circuit mode of operation c.w. c.w. vce v 13,5 12,5 f mhz 175 175 pl w 8 8 gp db > 9,0 typ. 10,5 n % > 70 typ. 75 zj n 2,8+j1,2 - yl ms 76 j16 - pin configuration pinning fig.1 simplified outline, sot123. pin 1 2 3 4 description collector emitter base emitter nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. ni semi-conductors encourages customers to verify that datasheets are current before placing orders. qualitv
vhp power transistor BLV10 ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (vbe - 0) peak value vcesm collector-emitter voltage (open base) vceo emitter-base voltage (open collector) vebo collector current (average) ic(av) collector current (peak value); f > 1 mhz icm r.f. power dissipation (f > 1 mhz); tmb = 25 c pit storage temperature tstg operating junction temperature t, 36 v 18 v 4 v 1,5 a 4,0 a 20 w -65 to + 150 'c max. 200 c max. max. max. max. max. max. 1.75 'c (a) 1.5 1.25 1 075 05 c mgp248 \h ^ \ 70 "c^ \ \mb-25c n. x \s ? i =]? 10 15 20 vce 'v> fig.2 d.c. soar. 0 i continuous d.c. operation ii continuous r.f. operation iii short-time operation during mismatch fig.3 r.f. power dissipation; vce^16,5v;f> 1 mhz. 100
vhp power transistor BLV10 thermal resistance (dissipation = 8 w; tmb = 72,4 c, i.e. th = 70 c) from junction to mounting base (d.c. dissipation) from junction to mounting base (r.f. dissipation) from mounting base to heatsink rth j-mb(dc) rth j-mb(rf) r^th mb-h 10,7 k/w 8,6 k/w 0,3 k/w characteristics collector-emitter breakdown voltage vbe = 0; lc = 5 ma collector-emitter breakdown voltage open base; lc = 25 ma emitter-base breakdown voltage open collector; ie = 1 ma collector cut-off current vbe = 0;vce=18v second breakdown energy; l = 25 mh; f = 50 hz open base rbe = 1011 d.c. current gain'1) lc = 0,75 a; vce = 5 v collector-emitter saturation voltage'1) ic = 2a;ib = 0,4a transition frequency at f = 100 mhz'1) -ie = 0,75 a; vcb = 13,5v -ie = 2 a; vcb = 13,5v collector capacitance at f = 1 mhz ie = le = 0; vcb = 13,5v feedback capacitance at f = 1 mhz lc = 100 ma; vce = 13,5v collector-flange capacitance note 1 measured under pulse conditions: tp < 200 (is; 8 < 0,02. v(br) ces v(br) ceo v(br)ebo ices esbo esbr hfe vcesat fr fr > 36 v > 18 v > 4v < 2 ma > 0,5 mj > 0,5 mj typ. 40 1 0 to 1 00 typ. 0,85 v typ. 950 mhz typ. 850 mhz cof typ. 16,5 pf typ. 12 pf typ. 2 pf
t a 1 -, [ [c 3 - j i ' f i -*mi] h. k cm i-.q ?! 5 10mm i scale dimensions (millimetre dimensions are derived from the original inch dimensions) unit mm inches a 747 637 0294 0251 b 5,82 5,56 0.229 0219 c 018 0.10 0.007 0.004 d 9,73 947 0.383 0.373 1 963 942 0397 0,371 f 272 231 0.107 0091 h 2071 1993 0815 0,785 l 561 516 0221 0203 p 333 304 0,131 0.120 q 463 4.11 0.182 0162 q 18.42 0725 "1 "2 25,15 ; 661 2438 j 6,09 0.99 j 0,26 0.96 024 u3 978 939 0385 0370 w1 051 002 w2 1 02 004 a outline version sot123a iec refer jedec ences eiaj european projection c30
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