ESD9N18VUS 1 - line , uni i - d irectional, trans ient voltage suppressors descriptions the ESD9N18VUS is a tvs (tran sient voltage suppressor) designed to protect sensitive electronic components which are connected to data and transmission lines from over - stress caused by esd (e lectro s tatic d ischarge ) , eft (electrical fast transients) and lightning. the ESD9N18VUS may be used to provide esd protection up to 30 k v (contact discharge ) according to iec61000 - 4 - 2 , and withstand peak pulse current up to 5 .0 a ( 8/20 s ) according to iec61000 - 4 - 5. the ESD9N18VUS is available in dfn1006 - 2l package. standard products are pb - free and halogen - free. features ? stand - off voltage: 1 8 v max ? transient protection for each line according to iec61000 - 4 - 2 (esd) : 30 k v ( contact dischar ge ) iec61000 - 4 - 5 (surge): 5 .0 a (8/20 s) ? c apacitance: c j = 2 0 pf typ. ? ultra - low leakage current: i r = 0.1na typ. ? l ow clamping voltage : v cl = 3 0v typ. @ i pp = 16a (tlp) ? solid - state silico n technology applications ? computers and peripherals ? cellular ha ndsets ? p ortable electronics ? notebooks dfn1006 - 2 l (bottom v iew) circuit diagram 9 = device code * = month code ( a~z) marking (top view) order i nformation device package shipping esd9n 18vus - 2 /tr dfn1006 - 2l 10 000/tape&reel pin 1 pin 2 9 * pin 1 pin 2 1 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute m aximum r ating s electrical characteristics (t a =25 o c, unless otherwise noted) 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) according to iec61000 - 4 - 5. parameter symbol rating unit peak pulse power ( t p = 8/20 parameter symbol condition min. typ. max. unit rever se maximum working voltage v rwm 18 v rever se leakage current i r v rwm = 1 8 v 0.1 50 n a rever se breakdown voltage v br i t = 1ma 1 8.6 22.4 v forward voltage v f i f = 20 ma 0. 65 0.83 1.10 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 30 v dynamic resistance 1) r dyn 0.42 2 ) v cl i pp = 1a, t p = 8/20s = 8/20s ESD9N18VUS 2 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted ) 8/20 s w aveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse p ower vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. reveres voltage power derating vs. ambient t emperature 0 2 4 6 8 10 12 14 16 18 6 8 10 12 14 16 18 20 f = 1mhz v ac = 50mv c j - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 10 100 1000 peak pulse power (w) pulse time ( ESD9N18VUS 3 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
esd cl amping ( +8kv contact discharge per iec61000 - 4 - 2) tlp measurement esd clamping ( - 8kv contact discharge per iec61000 - 4 - 2 ) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v) ESD9N18VUS 4 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn 1006 - 2 l top view bottom vi ew side view symbol dimensions in millimeter min. typ. max. a 0. 40 - 0.5 0 a1 0.00 - 0.05 a3 0.125 ref. d 0.95 1.00 1.05 e 0.55 0.60 0.65 b 0.20 0.25 0.30 l 0.45 0.50 0.55 e 0.65 typ. recommend l and p attern (unit: mm) note : this land pattern is for your reference only. ESD9N18VUS 5 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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