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data book 354 v1.0, 2001-01-01 gaas mmic cgy 96 data sheet power amplifier for gsm class 4 phones 3.2 w (35 dbm) output power at 3.5 v overall power added efficiency 50% fully integrated 3 stage amplifier power ramp control input matched to 50 ? , simple output match esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code (taped) package cgy 96 cgy 96 q62702-g63 mw-16 maximum ratings parameter symbol value unit positive supply voltage v d 9v supply current i d 4a channel temperature t ch 150 c storage temperature t stg 55 + 150 c pulse peak power dissipation p pulse 17 w total power dissipation ( t c 83 c) t c : temperature on case p tot 9.5 w thermal resistance parameter symbol value unit junction-case r thjch 7.0 k/w mw-16
gaas components cgy 96 data book 355 v1.0, 2001-01-01 figure 1 functional block diagram pin configuration pin no. name configuration 1 v d1 drain voltage 1 st stage 2 v d2 drain voltage 2 nd stage 3n.c. 4, 5, 6 v d3 /rf out drain 3 rd stage and rf-output 7n.c. 8 v control control voltage for power ramping 9, 10, 11, 12 n.c. 13 v neg negative voltage for current control circuit 14, 15 gnd1 ground pin 1 st stage 16 rf in rf input (17) gnd2 ground (backside of mw-16 package) eht09158 1 14, 15 17 16 4, 5, 6 d1 v rf in v d3 v 2 d2 cgy 96 control circuit current 13 v neg 8 control v / rf out gnd1 gnd2
gaas components cgy 96 data book 356 v1.0, 2001-01-01 electrical characteristics t a = 25 c, v d = 3.5 v, v neg = 5 v, v control = 2.2 v; duty cycle 12.5%, t on = 577 s parameters symbol limit values unit test conditions min. typ. max. frequency range f 880 915 mhz supply current i d 1.8 2.2 a p in = 2 dbm gain (small signal) g 35 38 db power gain g p 32.5 33 db p in = 2 dbm output power p out 34.5 35 dbm p in = 2 dbm, v control = 2.0 2.5 v overall power added efficiency 44 50 % p in = 2 dbm dynamic range output power 75 80 db v control = 0.2 2.2 v harmonics h (2 f 0 ) h (3 f 0 ) h (4 f 0) ) 35 35 35 40 43 44 dbc p in = 2 dbm noise power in rx (935 - 960 mhz) n rx 81 70 dbm p in = 2 dbm, p out = 35 dbm, 100 khz rbw stability 10:1 all spurious outputs < 60 dbc, vswr load, all phase angles input vswr 3:1 1.7:1
data book 357 v1.0, 2001-01-01 gaas components cgy 96 output power and pae vs. input power v d = 3.5 v, v control = 2.2 v, f = 900 mhz, duty cycle 12.5%, t on = 577 s -16 eht09159 23 out p in p 0 pae out p pae 25 27 29 31 33 35 37 39 dbm 10 20 30 40 50 60 70 80 -12 -8 -4 0 dbm 6 % 5 25 15 35 45 55 65 24 28 26 30 32 34 36 output power and pae vs. control voltage v d = 3.5 v, p in = 0 dbm, f = 900 mhz, duty cycle 12.5%, t on = 577 s 0 eht09160 -60 out p con v 0 pae out p pae -50 10 -40 20 -30 30 -20 40 -10 50 0 60 10 70 20 80 30 90 40 100 0.4 0.8 1.2 1.6 2 2.4 3 % dbm v
data book 358 v1.0, 2001-01-01 gaas components cgy 96 power gain and input return loss vs. frequency v d = 3.5 v, v control = 2.2 v, p in = 5 dbm, duty cycle 12.5%, t on = 577 s 0.88 eht09161 25 f power gain 26 27 28 29 30 31 32 33 db 35 0.89 0.9 ghz 0.915 req 0.88 eht09162 -15.0 f input return loss -14.5 -14.0 -13.5 -13.0 -12.5 -12.0 -11.5 -11.0 db -10.0 0.89 0.9 ghz 0.915 req output power vs. drain voltage matched for v d = 3.5 v, v control = 2.2 v, p in = 0 dbm, duty cycle 12.5%, t on = 577 s 2.2 eht09163 30 ot p d v 31 32 33 34 35 36 37 38 dbm 40 2.6 3 3.4 3.8 4.2 4.6 v 5.2 39
data book 359 v1.0, 2001-01-01 gaas components cgy 96 output power at different temperatures v d = 3.5 v, v control = 2.2 v, f = 900 mhz, duty cycle 12.5%, t on = 577 s -11 eht09164 28 in p -20 ? c -9 -7 -5 -3 -1 1 3 5 dbm 9 20 ? c 70 ? c 29 30 31 32 33 34 35 36 dbm out p pae at different temperatures v d = 3.5 v, v control = 2.2 v, f = 900 mhz, duty cycle 12.5%, t on = 577 s -11 eht09165 0 in p -20 ? c -9 -7 -5 -3 -1 135 dbm 9 pae 20 ? c 70 ? c 5 10 15 20 25 30 35 40 45 50 55 %
gaas components cgy 96 data book 360 v1.0, 2001-01-01 figure 2 cgy 96 evaluation board layout size is 34 mm 27 mm. connections v d 2.7 to 6 vdc, pulsed (gsm: 12.5% duty cycle, t on = 0.577 ms) v aux 2.7 to 6 vdc v control 0.2 to 2.2 vdc (0.2 v: min. p out , 2.2 v: max. p out ) clk 5 mhz to 15 mhz (with a 10 h inductor) or 150 khz to 250 khz (with a 100 h inductor instead of the 10 h) (rectangular signal, 50% duty, 0 v to v d voltage level) eht09166 gnd clk 11 c r 12 13 c d1 c 12 1 t l 11 aux v 14 c v con c 34 c l 3 out gsm power amplifier cgy 96 d v 2 c l 2 c 5 l 1 c 11 r in cgy 96 r 11 infineon
gaas components cgy 96 data book 361 v1.0, 2001-01-01 operation without using the negative voltage generator operation without using the on-board negative voltage generator is possible. in that case apply 5 8 v directly at pin#13 ( v neg -pin). the devices in front of pin 13 are not necessary in that case. figure 3 application circuit power on sequence 1. continuous clock (clk) on 2. turn on v aux ==> check negative voltage at pin#13 ( 5 10 v) 3. turn on v control (may be at the same time as 2) turn on drain voltage v d turn on input power eht09167 cgy 96 rf in gnd1 gnd1 rf out rf out rf out rf in l 1 2 l rf out l 3 clk l 11 d1.2 d1.1 ) ( t1 aux v 11 r 12 r 11 c 14 c 12 c c 13 neg v con v d2 v d1 v neg v 3 c 4 c 5 c 2 c 1 c d v control v 1 r 1
gaas components cgy 96 data book 362 v1.0, 2001-01-01 part list cgy 96 negative voltage generator l 1 33 nh d 1 bas 40-04w l 2 33 nh t 1 bc 848b l 3 33 nh 1) l 11 10 h c 1 1 nf c 11 1 nf c 2 12 pf c 12 1 nf c 3 10 pf 2) c 13 47 nf c 4 2.2 pf 2) c 14 1 nf c 5 1 nf r 11 3.8 k ? r 1 3.3 ? r 12 680 ? 1) 33 nh smd-inductor for drain3: part number bv1250 distributed by horst david gmbh, 85375 neufarn, germany, phone-no. +49-8165/9548-0, fax-no. +49-8165/9548-28 2) for maximum efficiency use high quality capacitors for the output matching: part-number accu-p0603 distributed by avx gmbh, 85757 karlsfeld, germany, phone-no. +49-8131/9004-0
gaas components cgy 96 data book 363 v1.0, 2001-01-01 determination of permissible total power dissipation for continuous and pulse operation the purpose of the following procedure is to prevent the junction temperature t j from exceeding the maximum allowed data sheet value. t j is determined by the dissipated power and the thermal properties of the device and board. the dissipated power is the power which remains in the chip and heats the device and junction. it does not contain rf signals which are coupled out consistently. this is a two step approach: for a pulsed condition both steps are needed. for cw and dc step one is sufficient. step 1: continuous wave / dc operation for the determination of the permissible total power dissipation p tot-dc from the diagram below it is necessary to obtain the temperature of the case t c first. because the mw-16 heat sink is not easily accessible to a temperature measurement the thermal resistance is defined as r thjc using the case temperature t c. there are two cases: when r thca (case to ambient) is not known: measure t c in operation of device and board at the upper side of the case where the temperature is highest. small thermoelements (< 1 mm, thin wires, thermopaste) or thermopapers with low heat dissipation are well suited. figure 4 measurement of case temperature t c pcb ambient (a) eht09168 thermoelement for case (c) junction (j) soldered heatsink case t
gaas components cgy 96 data book 364 v1.0, 2001-01-01 when r thca is already known. calculate the case temperature as t c = p diss r thca + t a graph for p tot-dc [mw] step 2: pulsed operation for the calculation of the permissible pulse load p tot-max the following formula is applicable: p tot-max = p tot-dc pulse factor = p tot-dc ( p tot-max / p tot-dc ) use the values for p tot-dc as derived from the above diagram and for the pulse factor = p tot-max / p tot-dc from the following diagram to get a specific value. 0 0 eht09169 tot dc p c t 20 40 60 80 100 120 ? c 160 1000 2000 3000 4000 5000 6000 7000 8000 mw 10000
gaas components cgy 96 data book 365 v1.0, 2001-01-01 pulse factor p tot-max / p tot-dc = f (t p ) p tot-max should not exceed the absolute maximum rating for the dissipated power p pulse = pulse peak power reliability considerations the above procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which correspond to the maximum allowed junction temperature. for best reliability keep the junction temperature low. the following formula allows to track the individual contributions which determine the junction temperature. t j =( p tot-diss /pulse factor r thjc ) + t c junction temperature (= channel temperature) power dissipated in the chip, divided by the applicable pulse factor (= 1 for dc and cw). it does not contain decoupled rf- power r th of device from junction to case temperature of the case, measured or calculated, device and board operating eht09170 p t p tot dc 10 -6 0 10 t t t d = p p t p tot max 0.005 0.01 0.02 0.05 0.1 0.2 0.5 d = -5 10 -4 10 -3 10 -2 10 -1 10 s 1 10 5
gaas components cgy 96 data book 366 v1.0, 2001-01-01 package outlines 7 1.6 max 0.1 1.4 0.35 0.05 0.8 exposed solderable heatsink 4.57 0.05 9 7 5.6 7 x 0.8 = b d a 0.2 m c 0.1 max 0.15 -0.06 0 ? ...7 ? +0.05 d a-b a-b 0.2 h d 4x 16x 0.2 d 16x 0.1 c c h mw-16 (special package) gpw05969 sorts of packing package outlines for tubes, trays etc. are contained in our data book package information . dimensions in mm smd = surface mounted device

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