STN2018 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp . STN2018 2013. v1 description STN2018 is the n-channel logic enhancement mode pow er field effect transistors which are produced using high cell density dmos tre nch technology. this high density process is especially tailored to minimize on-stat e resistance. these devices are particularly suited for low volta ge application, notbook computer power management and other battery powered circuits where high-side switching. pin configuration sop-8 part marking sop-8 feature 20v/10a, r ds(on) = 10m @vgs = 4.5v 20v/7a, r ds(on) = 15m @vgs = 2.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability sop-8 package design
STN2018 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp . STN2018 2013. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain current (tj=150 ) t a =25 t a =70 i d 10.0 8.0 a pulsed drain current i dm 35 a continuous source current (diode conduction) i s 2.3 a power dissipation t a =25 t a =70 p d 2.5 1.6 w operation junction temperature t j -55/150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient r ja 80 /w
STN2018 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp . STN2018 2013. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =v gs ,i d =250 ua 0.6 1.4 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =20v gs =0v 1 zero gate voltage drain current i dss t j =55 v ds =20v gs =0v 10 ua on-state drain current i d(on) v ds 5v,v gs =4.5 6 a drain-source on-resistance r ds(on) v gs =4.5 v, i d =10a v gs =2 .5v, i d =7.0a 0.008 0.011 0.012 0.015 forward tran conductance g fs v ds =15.0v,i d =5.0a 30 s diode forward voltage v sd i s =1.0a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 18 25 gate-source charge q gs 4.2 gate-drain charge q gd v ds =10v,v gs =4.5v i d =5.0a 6.8 nc input capacitance ciss 850 output capacitance coss 135 reverse transfercapacitance crss vds=10v,vgs=0v f=1mhz 105 pf 12 16 turn-on time t d(on) tr 10 28 30 55 turn-off time t d(off) tf v dd =10v,r l =10 i d =1.0a,v gen =4.5v r g =6 35 58 ns
STN2018 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp . STN2018 2013. v1 typical characterictics (25 unless note)
STN2018 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp . STN2018 2013. v1 typical characterictics (25 unless note)
STN2018 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp . STN2018 2013. v1 typical characterictics (25 unless note)
STN2018 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp . STN2018 2013. v1 sop-8 package outline
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