preliminary data sheet powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2002 powersem reserves the right to change limits, test conditions and dimensions i trms = 2x 180 a i tavm = 2x 104 a v rrm = 2000-2200 v v rsm v rrm type v dsm v drm vv 2100 2000 pskt 94/20io1 pskh 94/20io1 2300 2200 pskt 94/22io1 pskh 94/22io1 features international standard package, jedec to-240 aa d irect c opper b onded al 2 o 3 -ceramic base plate planar passivated chips l isolation voltage 3600 v~ ul registered, e 148688 gate-cathode twin pins for version 1 applications dc motor control softstart ac motor controller light, heat and temperature control advantages space and weight savings simple mounting with two screws improved temperature and power cycling capability reduced protection circuits high voltage thyristor module high voltage thyristor/diode modules PSKT94 /pskh 94 symbol test conditions maximum ratings i trms t vj = t vjm 180 a i tavm t c = 85c; 180 sine 104 a i tsm t vj = 45c; t = 10 ms (50 hz) 1700 a v r = 0 t = 8.3 ms (60 hz) 1800 a t vj = t vjm t = 10 ms (50 hz) 1540 a v r = 0 t = 8.3 ms (60 hz) 1640 a i 2 dt t vj = 45c t = 10 ms (50 hz) 14450 a 2 s v r = 0 t = 8.3 ms (60 hz) 13500 a 2 s t vj = t vjm t = 10 ms (50 hz) 11850 a 2 s v r = 0 t = 8.3 ms (60 hz) 11300 a 2 s (di/dt) cr t vj = t vjm repetitive, i t = 250 a 150 a/s f = 50 hz, t p = 200 s v d = 2/3 v drm i g = 0.45 a, non repetitive, i t = i tavm 500 a/s di g /dt = 0.45 a/s (dv/dt) cr t vj = t vjm ; v dr = 2/3 v drm 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm t p = 30 s 10 w i t = i tavm t p = 300 s 5 w p gav 0.5 w v rgm 10 v t vj -40...125 c t vjm 125 c t stg -40...125 c v isol 50/60 hz, rms t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m5) 2.5-4.0/22-35 nm/lb.in. terminal connection torque (m5) 2.5-4.0/22-35 nm/lb.in. weight typical including screws 90 g data according to iec 60747 and refer to a single thyristor/diode unless otherwise stated. pskh pskt 3671 542 31542 6 7 4 5 3 2 1 to-240 aa www.datasheet.in
powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2002 powersem reserves the right to change limits, test conditions and dimensions fig. 1 gate trigger characteristics fig. 2 gate trigger delay time 10 100 1000 1 10 100 1000 10 0 10 1 10 2 10 3 10 4 0.1 1 10 i g v g ma ma i g 1: i gt , t vj = 125 c 2: i gt , t vj = 25 c 3: i gt , t vj = -40 c s t gd v 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w i gd , t vj = 125 c 3 4 2 1 5 6 limit typ. t vj = 25 c dimensions in mm (1 mm = 0.0394") r thjc for various conduction angles d: d r thjc (k/w) dc 0.22 180 0.23 120 0.25 60 0.27 30 0.28 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.0066 0.0019 2 0.0678 0.0477 3 0.1456 0.344 r thjk for various conduction angles d: d r thjk (k/w) dc 0.42 180 0.43 120 0.45 60 0.47 30 0.48 c onstants for z thjk calculation: ir thi (k/w) t i (s) 1 0.0066 0.0019 2 0.0678 0.0477 3 0.1456 0.344 4 0.2 1.32 symbol test conditions characteristic values i rrm , i drm t vj = t vjm ; v r = v rrm 15 ma v t i t = 300 a; t vj = 25c 1.74 v v t0 for power-loss calculations only (t vj = t vjm ) 0.85 v r t 3.2 m ? v gt v d = 6 v; t vj = 25c 1.5 v t vj = -40c 1.6 v i gt v d = 6 v; t vj = 25c 100 ma t vj = -40c 200 ma v gd t vj = t vjm ;v d = 2/3 v drm 0.25 v i gd t vj = t vjm ;v d = 2/3 v drm 10 ma i l t vj = 25c; v d = 6 v; t p = 30 s 200 ma di g /dt = 0.45 a/s; i g = 0.45 a i h t vj = 25c; v d = 6 v; r gk = 150 ma t gd t vj = 25c; v d = 1/2 v drm 2s di g /dt = 0.45 a/s; i g = 0.45 a t q t vj = t vjm ; v r = 100 v; v d = 2/3 v drm ; t p = 200 s typ. 185 s dv/dt = 20 v/s; i t = 150 a; -di/dt = 10 a/s q s t vj = t vjm 170 c i rm -di/dt = 6 a/s; i t = 50 a 45 a r thjc per thyristor; dc current 0.22 k/w per module 0.11 k/w r thjk per thyristor; dc current 0.42 k/w per module 0.21 k/w d s creeping distance on surface 12.7 mm d a creepage distance in air 9.6 mm a maximum allowable acceleration 50 m/s 2 www.datasheet.in
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