Part Number Hot Search : 
SAA7708H A2810 BPC3504 B60100 AN3211S FDY301NZ EDZ15B 2SA16
Product Description
Full Text Search
 

To Download ECH8657 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ECH8657 no. a1710-1/4 features ? 4v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 35 v gate-to-source voltage v gss 20 v drain current (dc) i d 4.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 30 a allowable power dissipation p d when mounted on ceramic substrate (1200mm 2 0.8mm) 1unit 1.3 w total dissipation p t when mounted on ceramic substrate (1200mm 2 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7011a-001 ordering number : ena1710a d2210 tkim/42810pe tkim tc-00002338 sanyo semiconductors data sheet ECH8657 n-channel silicon mosfet general-purpose switching device applications http://semicon.sanyo.com/en/network product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection tl tc lot no. 8765 1234 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view
ECH8657 no. a1710-2/4 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 35 v zero-gate voltage drain current i dss v ds =35v, v gs =0v 1 + a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 + a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d =2a 1.66 s static drain-to-source on-state resistance r ds (on)1 i d =2a, v gs =10v 45 59 m 1 r ds (on)2 i d =1a, v gs =4.5v 85 119 m 1 r ds (on)3 i d =1a, v gs =4v 110 155 m 1 input capacitance ciss v ds =20v, f=1mhz 230 pf output capacitance coss v ds =20v, f=1mhz 37 pf reverse transfer capacitance crss v ds =20v, f=1mhz 25 pf turn-on delay time t d (on) see speci ed test circuit. 6 ns rise time t r see speci ed test circuit. 11 ns turn-off delay time t d (off) see speci ed test circuit. 17 ns fall time t f see speci ed test circuit. 9 ns total gate charge qg v ds =20v, v gs =10v, i d =4.5a 4.6 nc gate-to-source charge qgs v ds =20v, v gs =10v, i d =4.5a 1.0 nc gate-to-drain ?miller? charge qgd v ds =20v, v gs =10v, i d =4.5a 1.0 nc diode forward voltage v sd i s =4.5a, v gs =0v 0.85 1.2 v switching time test circuit pw=10 + s d.c. ) 1% p. g 50 1 g s d i d =2a r l =10 1 v dd =20v v out ECH8657 v in 10v 0v v in i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 1.5 0.5 2.5 3.0 1.0 2.0 3.5 4.0 0 0 it14210 it14211 0.1 0.4 0.2 0.6 0.5 0.3 0.8 0.7 0.9 1.0 0 1 2 3 4 5 1 4 2 5 3 6 v ds =10v --25 c ta=75 c v gs =3.0v 3. 5v 4.0v 25 c 4.5v 15.0v 6.0v 10.0v
ECH8657 no. a1710-3/4 ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m 1 i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf a s o drain-to-source voltage, v ds -- v drain current, i d -- a 0.2 0.4 0.6 1.2 1.0 0.8 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 7 5 3 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 40 80 160 200 120 v gs =4.0v, i d =1a v gs =10. 0v, i d =2a v gs =4.5v, i d =1a it14213 it14214 it14215 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v 10 1.0 7 5 3 7 5 3 2 2 0.1 2 1.0 357 it14216 v dd =15v v gs =10v t d (off) t r t f 10 23 57 t d (on) 0.1 2 2 5 3 1.0 7 5 3 2 0.01 0.1 2 57 32 1.0 57 357 3 0 100 10 7 5 3 5 3 2 2 30 5152025 10 it14217 f=1mhz ciss coss crss 012345 0 1 2 3 4 5 6 7 8 10 9 it14218 v ds =10v i d =4.5a it15504 2 2 3 5 7 0.1 2 3 5 7 1.0 0.01 0.1 2 1.0 57 32 10 57 33 257 operation in this area is limited by r ds (on). 100ms dc operation (ta=25 c) 10ms 2 3 5 7 3 5 7 10 i dp =30a ( pw ) 10 + s) i d =4.5a 100 + s 1ms ta=25 c single pulse when mounted on ceramic substrate (1200mm 2 0.8mm) 1unit gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m 1 r ds (on) -- v gs it16223 ta=25 c i d =1a 2a 0 2 10 12 8 6 41416 0 40 80 160 120 240 200
ECH8657 no. a1710-4/4 ps this catalog provides information as of december, 2010. speci cations and information herein are subject to change without notice. note on usage : since the ECH8657 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. it15505 p d -- ta allowable power dissipation, p d -- w 0 0 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 1.5 1.3 1unit total dissipation when mounted on ceramic substrate (1200mm 2 0.8mm) ambient temperature, ta -- c


▲Up To Search▲   

 
Price & Availability of ECH8657
Newark

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
52T7768
onsemi N-Channel Power Mosfet, 35V, 4.5A, 59Mohm, Dual Ech8/ Reel Rohs Compliant: Yes |Onsemi ECH8657-TL-H 30000: USD0.215
18000: USD0.225
12000: USD0.241
6000: USD0.258
3000: USD0.279
BuyNow
0

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
ECH8657-TL-HOSCT-ND
onsemi MOSFET 2N-CH 35V 4.5A 8ECH 30000: USD0.2075
9000: USD0.20958
6000: USD0.22634
3000: USD0.23892
1000: USD0.26826
500: USD0.3152
100: USD0.3772
10: USD0.545
1: USD0.63
BuyNow
1793

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
ECH8657-TL-H
onsemi Transistor MOSFET Array Dual N-CH 35V 4.5A 8-Pin ECH T/R - Tape and Reel (Alt: ECH8657-TL-H) 60000: USD0.22244
30000: USD0.22908
18000: USD0.23572
12000: USD0.24236
6000: USD0.249
BuyNow
0

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
863-ECH8657-TL-H
onsemi MOSFETs SWITCHING DEVICE 1: USD0.63
10: USD0.545
100: USD0.378
500: USD0.316
1000: USD0.269
3000: USD0.238
6000: USD0.225
9000: USD0.209
24000: USD0.207
BuyNow
29

Rochester Electronics

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
onsemi Power Field-Effect Transistor ' 1000: USD0.2058
500: USD0.2179
100: USD0.2276
25: USD0.2373
1: USD0.2421
BuyNow
135925

TME

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
ECH8657-TL-H
onsemi Transistor: N-MOSFET x2; unipolar; 35V; 4.5A; Idm: 30A; 1.5W; ECH8 3000: USD0.282
500: USD0.325
100: USD0.347
25: USD0.401
3: USD0.423
RFQ
0

Richardson RFPD

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
ECH8657-TL-H
onsemi POWER MOSFET TRANSISTOR 6000: USD0.21
BuyNow
0

Chip 1 Exchange

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
onsemi INSTOCK RFQ
3718

Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
ECH8657-TL-H
onsemi Transistor MOSFET Array Dual N-CH 35V 4.5A 8-Pin ECH T/R (Alt: ECH8657-TL-H) BuyNow
0

Flip Electronics

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
onsemi Stock, ship today 1: USD0.164
RFQ
3000

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
MFG UPON REQUEST RFQ
37834

South Electronics

Part # Manufacturer Description Price BuyNow  Qty.
ECH8657-TL-H
onsemi ECH8657-TL-H RFQ
0

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X