unisonic technologies co., ltd ut75n02 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r502-328.c 75 a , 25v n-channel power mosfet ? description the utc ut75n02 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable fo r use as a load switch or in pwm applications. ? features * r ds(on) < 7m ? @ v gs =10v * r ds(on) < 8m ? @ v gs =7v ? symbol 1.gate 3.source 2.drain to-220 to- 251 1 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 ut75n02l-ta3-t ut75n02g-ta3-t to-220 g d s tube UT75N02L-TM3-T ut75n02g-tm3-t to-251 g d s tube note: pin assignment: g: gate d: drain s: source
ut75n02 preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-328.c ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain source voltage v dss 25 v gate-source voltage v gss 20 v continuous drain current i d 75 a pulsed drain current (note 2) i dm 170 a avalanche current i ar 60 a avalanche energy l=0.1mh e as 140 mj repetitive avalanche ener gy (note 3) l=0.05mh e ar 5.6 mj power dissipation to-220 p d 40 w to-251 28 junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by maximum junction temperature. duty cycle 1%. ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 62.5 c/w to-251 110 junction to case to-220 jc 3.13 c/w to-251 4.53
ut75n02 preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-328.c ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 25 v drain-source leakage current i dss v ds = 20v, v gs = 0v 25 a v ds =20v, v gs = 0v, t j = 125c 250 a gate-source leakage current i gss v ds =0v, v gs =20v 250 na on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d =250a 1 1.5 3 v on-state drain current (note 1) i d ( on ) v ds = 10v, v gs = 10v 70 a static drain - source on-resistance (note 1) r ds(on) v gs = 10v, i d = 30a 5 7 m ? v gs = 7v, i d = 24a 6 8 m ? dynamic parameters input capacitance c iss v ds =15v, v gs =0 v, f=1mhz 5000 pf output capacitance c oss 1800 pf reverse transfer capacitance c rss 800 pf switching parameters (note 2) turn-on delay time t d ( on ) v ds = 15v, v gs = 10v, i d 30a r gs = 2.5 ? , r l = 1 ? , 7 ns turn-on rise time t r 7 ns turn-off delay time t d ( off ) 24 ns turn-off fall-time t f 6 ns total gate charge q g v ds =0.5v ( br ) dss , v gs =10v, i d =35a 140 nc gate source charge q gs 40 nc gate drain charge q gd 75 nc source- drain diode ratings and characteristics forward voltage (note 1) v sd i f = i s , v gs = 0v 1.3 v continuous current i s 75 a notes: 1. pulse test : pulse width 300 sec, duty cycle 2% 2. independent of operating temperature
ut75n02 preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-328.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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