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to-247ac irgp4640pbf to-247ad irgp4640-ep g c e c g c e c

! gc e gate collector emitter v ces = 600v i c = 40a, t c = 100c t sc 5s, t j(max) = 175c v ce(on) typ. = 1.60v @ i c = 24a features benefits low v ce(on) and switching losses high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability positive v ce (on) temperature coefficient excellent current sharing in parallel operation 5s short circuit soa enables short circuit protection scheme lead-free, rohs compliant environmentally friendly applications ? inverters ? ups ? welding absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 65 i c @ t c = 100c continuous collector current 40 i cm pulse collector current, v ge = 15v 72 i lm clamped inductive load current, v ge = 20v 96 a v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 250 w p d @ t c = 100c maximum power dissipation 125 t j operating junction and -40 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc junction-to-case ??? ??? 0.60 c/w r cs case-to-sink (flat, greased surface) ??? 0.24 ??? r ja junction-to-ambient (typical socket mount) ??? ??? 40 e c g n-channel form quantit y irgp4640pbf to-247ac tube 25 irgp4640pbf IRGP4640-EPBF to-247ad tube 25 IRGP4640-EPBF base part number package type standard pack orderable part number

! notes: pulse width limited by max. junction temperature. v cc = 80% (v ces ), v ge = 20v, l = 100h, r g = 10 ?. r is measured at t j of approximately 90c. refer to an-1086 for guidelines for measuring v (br)ces safely. maximum limits are based on statistical sample size characterization. values are influenced by parasitic l and c in measurement. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.30 ? v/c v ge = 0v, i c = 1ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.60 1.90 i c = 24a, v ge = 15v, t j = 25c ?2.00? i c = 24a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 700a ? v ge ( t h) / ? tj threshold voltage temp. coefficient ? -18 ? mv/c v ce = v ge , i c = 1.0ma (25c - 175c) gfe forward transconductance ? 17 ? s v ce = 50v, i c = 24a, pw = 80s i ces collector-to-emitter leakage current ? 1.0 20 a v ge = 0v, v ce = 600v ?600? v ge = 0v, v ce = 600v, t j = 175c i ge s gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 50 75 i c = 24a q ge gate-to-emitter charge (turn-on) ? 15 20 nc v ge = 15v q gc gate-to-collector charge (turn-on) ? 20 30 v cc = 400v e on turn-on switching loss ? 0.1 0.2 e off turn-off switching loss ? 0.6 0.7 mj e total total switching loss ? 0.7 0.9 i c = 24a, v cc = 400v, v ge = 15v t d(on) turn-on delay time ? 40 55 r g = 10 ? , t j = 25c t r rise time ?2030ns e nergy los s es i nclude tai l & diode r evers e r ecover y t d(off) turn-off delay time ? 105 115 t f fall time ? 30 40 e on turn-on switching loss ? 0.4 ? e off turn-off switching loss ? 0.85 ? mj e total total switching loss ? 1.25 ? i c = 24a, v cc = 400v, v ge =15v t d(on) turn-on delay time ? 40 ? r g =10 ? , t j = 175c t r rise time ? 25 ? ns e nergy los s es i nclude tai l & diode r evers e r ecover y t d(off) turn-off delay time ? 125 ? t f fall time ? 40 ? c ies input capacitance ? 1490 ? pf v ge = 0v c oes output capacitance ? 130 ? v cc = 30v c res reverse transfer capacitance ? 45 ? f = 1.0mhz t j = 175c, i c = 96a rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v rg = 10 ? , v ge = +20v to 0v scsoa short circuit safe operating area 5 ? ? s v cc = 400v, vp =600v rg = 10 ? , v ge = +15v to 0v conditions v

! fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 175c; v ge =15v fig. 5 - reverse bias soa t j = 175c; v ge =20v 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10sec 100sec tc = 25c tj = 175c single pulse dc 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 70 i c ( a ) 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 300 p t o t ( w ) " #$% & ' ( )$ * & ' + , - 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 70 80 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tsink = 100c gate drive as specified power dissipation = 125w i sq ua re wav e: v cc dio de as specified

! . fig. 8 - typ. igbt output characteristics t j = 175c; tp = 80s 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 9 - typical v ce vs. v ge t j = -40c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a fig. 10 - typical v ce vs. v ge t j = 25c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a fig. 11 - typical v ce vs. v ge t j = 175c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a fig. 6 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 80s 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v

! / fig. 16 - typ. switching time vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 24a; v ge = 15v 0 25 50 75 100 125 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 14 - typ. switching time vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 10 ? ; v ge = 15v 10 20 30 40 50 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 24a; v ge = 15v 0 25 50 75 100 125 rg ( ? ) 0 200 400 600 800 1000 1200 1400 1600 e n e r g y ( j ) e off e on fig. 17 - v ge vs. short circuit time v cc = 400v; t c = 25c 8 1012141618 v ge (v) 4 6 8 10 12 14 16 t i m e ( s ) 40 80 120 160 200 240 280 c u r r e n t ( a ) fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s 0 5 10 15 v ge (v) 0 20 40 60 80 100 120 i c e ( a ) t j = 25c t j = 175c fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 10 ? ; v ge = 15v 0 102030405060 i c (a) 0 200 400 600 800 1000 1200 1400 1600 1800 e n e r g y ( j ) e off e on

! 0 fig 20. maximum transient thermal impedance, junction-to-case 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.2568 0.000311 0.3429 0.006347 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri fig. 18 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 19 - typical gate charge vs. v ge i ce = 24a; l = 600h 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 5 10 15 20 25 30 35 40 45 50 55 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 300v v ces = 400v

! 1 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v dc 4x dut vcc r sh

! 2 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 -100 0 100 200 300 400 500 600 -0.40 0.10 0.60 time(s) v ce (v) -5 0 5 1 0 1 5 2 0 2 5 3 0 e off loss 5% v ce 5% i ce 90% i ce tf v ce c i ce -100 0 100 200 300 400 500 600 11.70 11.90 12.10 12.30 time (s) v ce (v) -10 0 10 20 30 40 50 60 e on i ce c 90% test 10% i ce 5% v ce tr v ce c fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 time (s) v ce (v) -50 0 50 100 150 200 250 300 i ce (a) v ce i ce

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to-247ac package is not recommended for surface mount application.

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to-247ad package is not recommended for surface mount application.
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! ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? highest passing voltage. qualification information ? moisture sensitivity level to-247ac n/a to-247ad n/a esd qualification level industrial (per international rectifier?s internal guidelines) rohs compliant yes human body model class h1c (+/- 2000v) ?? (per jedec jesd22-a114) charged device model class c5 (+/- 1000v) ?? (per jedec jesd22-c101)

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