fmy4a transistors rev.a 1/4 power management (dual transistors) fmy4a z feature 1) both a 2sa1037ak chip and 2sc2412k chip in a emt or umt or smt package. z equivalent circuits fmy4a (3) (2) (1) (4) (5) tr 2 tr 1 z external dimensions (unit : mm) rohm : smt5 fmy4a eiaj : sc-74a 2.9 each lead has same dimensions 0to0.1 0.8 0.3to0.6 0.15 1.6 2.8 0.95 1.9 ( 4 ) ( 5 ) ( 1 ) 0.3 ( 3 ) 0.95 ( 2 ) z absolute maximum ratings (ta = 25 c) parameter symbol limits ? 60 60 tr 1 tr 2 unit v ? 50 50 v ?67 ? 150 150 v ma 300 (total) ?55 to +150 c 150 c v cbo v ceo v ebo i c ? 1mw p c tj tstg ? 1 200mw per element must not be exceeded. collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature z package, marking, and packaging specifications part no. fmy4a smt5 y4 t148 3000 package marking code basic ordering unit (pieces)
fmy4a transistors rev.a 2/4 z electrical characteristics (ta=25 c) tr 1 (pnp) parameter symbol min. typ. max. unit conditions bv ebo i cbo i ebo v ce(sat) h fe bv ceo ?50 ?6 ? ? ? 120 ? ? ? ? ? ? ? ? ?0.1 ?0.1 ?0.5 560 v v a a v ? i c = ?1ma bv cbo ?60 ?? vi c = ?50a i e = ?50a v cb = ?60v v eb = ?6v i c /i b = ?50ma/?5ma v ce = ?6v , i c = ?1ma f t cob ? ? 140 4 ? 5 mhz pf v ce = ?12v , i e = 2ma , f = 100mhz v cb = ?12v , i e = 0a , f = 1mhz tr 2 (npn) parameter symbol min. typ. max. unit conditions bv ebo i cbo i ebo v ce(sat) h fe bv ceo 50 7 ? ? ? 120 ? ? ? ? ? ? ? ? 0.1 0.1 0.4 560 v v a a v ? i c = 1ma bv cbo 60 ?? vi c = 50a i e = 50a v cb = 60v v eb = 7v i c /i b = 50ma/5ma v ce = 6v , i c = 1ma f t cob ? ? 180 2 ? 3.5 mhz pf v ce = 12v , i e = ?2ma , f = 100mhz v cb = 12v , i e = 0a , f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance ? ? ? transition frequency of the device. ? transition frequency of the device. z electrical characteristics curves pnp tr fig.1 grounded emitter propagation characteristics ? 0.2 collector current : ic ( ma) ? 50 ? 20 ? 10 ? 5 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 v ce = ? 6v base to emitter voltage : v be ( v) ta=100?c 25?c ? 40?c fig.2 grounded emitter output characteristics () ?0.4 ?4 ?8 ?1.2 0 ?2 ?6 ?10 ?0.8 ?1.6 ?2.0 ?3.5a ?7.0 ?10.5 ?14.0 ?17.5 ?21.0 ?24.5 ?28.0 ?31.5 i b =0 ta=25?c ?35.0 collector current : i c ( ma) collector to mitter voltage : v ce ( v) fig.3 grounded emitter output characteristics (?) ?40 ?80 ?5 ?3 ?4 ?2 ?1 ?20 ?60 ?100 0 i b =0 ta=25?c collector current : i c ( ma ) collector to emitter voltage : v ce ( v) ?50a ?100 ?150 ?200 ?250 ?500 ?450 ?400 ?350 ?300
fmy4a transistors rev.a 3/4 fig.4 dc current gain vs. collector current () 500 200 100 50 ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 dc current gain : h fe ta=25?c v ce = ?5v ?3v ?1v collector current : i c ( ma) fig.5 dc current gain vs. collector current (?) 500 200 100 50 ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 dc current gain : h fe collector current : i c ( ma) v ce = ?6v ta=100?c ?40?c 25?c fig.6 collector-emitter saturation voltage vs. collector current () ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 ?1 ?0.5 ?0.2 ?0.05 ta=25?c collector current : i c ( ma) i c /i b = 50 20 10 collector saturation voltage : v ce(sat) ( v) fig.8 gain bandwidth product vs. emitter current 50 100 0.5 20 50 100 200 500 1000 12 510 emitter current : i e ( ma) transition frequency : f t ( mhz) ta=25?c v ce = ? 12v fig.7 collector-emitter saturation voltage vs. collector current (ii) ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 ?1 ?0.5 ?0.2 ?0.05 collector current : i c ( ma) l c /l b =10 ta=100?c 25?c ?40?c collector saturation voltage : v ce(sat) ( v) fig.9 collector output capacitance vs. collector-base voltage emitter inputcapacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) ?0.5 ?20 2 5 10 ?1 ?2 ?5 ?10 20 cib cob ta=25?c f=1mhz i e = 0a i c = 0a npn tr fig.10 grounded emitter propagation characteristics 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta = 100c v ce =6v collector current : i c (ma) base to emitter voltage : v be (v) 25c ?55c fig.11 grounded emitter output characteristics ( ) 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 collector current : i c (ma) collector to emitter voltage : v ce (v) 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25c i b =0a 0.40ma 0.50ma 0.45ma 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25c collector current : i c (ma) collector to emitter voltage : v ce (v) 3a 6a 9a 12a 15a 18a 21a 24a 27a 30a fig.12 grounded emitter output characteristics ( ? )
fmy4a transistors rev.a 4/4 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25c fig.13 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (ma) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25c ?55c ta=100c v ce = 5v fig.14 dc current gain vs. collector current ( ? ) dc current gain : h fe collector current : i c (ma) fig.15 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25c fig.16 collector-emitter saturation voltage vs. collector current ( ) 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100c 25c ?55c fig.17 collector-emitter saturation voltage vs. collector current (?) collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100c 25c ?55c fig.18 gain bandwidth product vs. emitter current 50 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 100 200 500 ta=25c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.20 base-collector time constant vs. emitter current ?0.2 ?0.5 ?1 ?2 ?5 ?10 base collector time constant : cc? bb' (ps) emitter current : i e (ma) 10 20 50 100 200 ta=25c f=32mh z v cb =6v fig.19 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cob ta=25c f = 1mhz i e =0a i c =0a cib
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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