wtbv46 / WTBV46M power transistor winsem technology corp. page 1 version a13 high voltage npn transistor to-92 to-126 pin definition pin definition 1. emitter 1. emitter 2. collector 2. collector 3. base 3. base features ? high voltage ? very high switch speed ? bv ceo : 400v ? bv cbo : 800v ? i c : 1.5a ? v ce ( sat ) : 2v@i c / i b =800ma/ 200ma ? silicon triple diffused type application ? electronic ballasts ? adapter ? lighting absolute maximum ratings ( tc = 25 ) parameter symbol rating unit collector-base voltage vcbo 800 v collect-break down voltage vces 800 v collector-emitter voltage vceo 400 v emitter-base voltage vebo 9 v collector current(dc) ic 1.5 a collector current(pulse) icp 2 a total power dissipation(to92) pd 1.5 w total power dissipation(to126) 20 junction temperature tj 150 operating junction and storage te mperature range tstg -55 ~ + 150
wtbv46 / WTBV46M power transistor winsem technology corp. page 2 version a13 electrical character istics ( tc = 25 ) parameter symbol test condition min typ max unit collector-base voltage bvcbo ic = 1ma, ib=0 800 v collector-emitter brea kdown voltage bvceo ic = 1ma, ie=0 400 v emitter- base breakdown voltage bvebo ie = 1ma, ic=0 9 v collector cutoff current icb o vcb = 700v, ie=0 1 ? emitter cutoff current iebo veb = 9v, ic=0 1 ? dc current gain hfe1 vce = 10v, ic=10ma 20 hfe2 vce = 10v, ic=100ma 25 45 hfe3 vce = 10v, ic=280ma 20 collector-emitter sa turation voltage vce(sat1) ic/ib = 50ma / 10ma 0.5 v vce(sat2) ic/ib = 100ma / 10ma 1 vce(sat3) ic/ib = 200ma / 20ma 3 base-emitter saturation voltage vbe(sat1) ic/ib = 50ma / 10ma 1.15 v vbe(sat2) ic/ib = 100ma / 10ma 1.25 dynamic frequency f t vce=10v, ic=0.1a 4 mhz output capacitance cob vcb=10v, f=01.mhz 21 pf resistive load switching time (ratings) rise time t r vcc=125v, ic=100ma, ib1 = ib2 = 20ma, tp = 25us duty cycle Q 1% 2 us storage time t stg 5 6 us fall time t f 0.2 0.7 us thermal performance parameter symbol limit unit junction to ambient therm al resistance (to92) r ja 122 /w junction to ambient therm al resistance (to126) 90
wtbv46 / WTBV46M power transistor winsem technology corp. page 3 version a13 electrical characteristic curves static characteristics dc current gain v ce(sat) v.s. v be(sat power derating reverse bias soa safety operating area
wtbv46 / WTBV46M power transistor winsem technology corp. page 4 version a13 ordering information type no marking package code wtbv46 bv46 to-92 marking and pin define first line wtc company name second line bv46 product code third line a j 0 t l 1st (year code) a-2010 b-2011 c-2012 2nd (month code) a-jan, b-feb, c-mar, d-apr, e-may, f-jun, g-jul, h-aug, i-sep, j-oct, k-n ov, l-dec 3rd (lot code) 0~9 , a~z 4th (product code) m - mos , t - transistor, l - linear 5th (package code) i - to251, d - to252 , l - to92, m - to126, x - to220, f - to220f, y - sot89, s - sop8 6th (spec code) (reserve) to-92 package dimension to-92 dimension dim millimeters inches min max min max a 4.3 4.7 0.169 0.185 b 4.3 4.7 0.169 0.185 c 13.53(typ) 0.532(typ) d 0.39 0.49 0.015 0.019 e 1.18 1.28 0.046 0.5 f 3.3 3.7 0.13 0.146 g 1.27 1.31 0.05 0.051 h 0.33 0.43 0.013 0.017
wtbv46 / WTBV46M power transistor winsem technology corp. page 5 version a13 ordering information type no marking package code WTBV46M bv46m to-126 marking and pin define first line wtc company name second line bv46m product code third line a j 0 t m 1st (year code) a-2010 b-2011 c-2012 2nd (month code) a-jan, b-feb, c-mar, d-apr, e-may, f-jun, g-jul, h-aug, i-sep, j-oct, k-n ov, l-dec 3rd (lot code) 0~9 , a~z 4th (product code) m - mos , t - transistor, l - linear 5th (package code) i - to251, d - to252 , l - to92, m - to126, x - to220, f - to220f, y - sot89, s - sop8 6th (spec code) (reserve) to-126 package dimension
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