WNMD2160 dual n-channel, 20v, 6.3a, power mosfet descriptions the WNMD2160 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WNMD2160 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23-6l applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-23-6l pin configuration (top view) 2160 yyww 2160 = device code yy = year ww = week marking order information device package shipping WNMD2160-6/tr sot-23-6l 3000/reel&tape 6 5 4 1 2 3 v ds (v) rds(on) (
) 0.0157@ v gs =4.5v 0.018@ v gs =3.1v 0.020@ v gs =2.5v 20 esd rating: 2000v hbm g1 6 d1/d2 5 g2 4 1 s1 2 d1/d2 3 s2 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 20 gate-source voltage v gs 10 v t a =25c 6.3 5.7 continuous drain current a t a =70c i d 5.0 4.6 a t a =25c 1.1 0.9 maximum power dissipation a t a =70c p d 0.7 0.6 w t a =25c 5.8 5.2 continuous drain current b t a =70c i d 4.6 4.1 a t a =25c 0.9 0.7 maximum power dissipation b t a =70c p d 0.6 0.5 w pulsed drain current c i dm 30 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings single operation parameter symbol typical maximum unit t ? 10 s 90 108 junction-to-ambient thermal resistance a steady state r ja 110 130 t ? 10 s 105 128 junction-to-ambient thermal resistance b steady state r ja 133 158 junction-to-case thermal resistance steady state r jc 60 75 c/w dual operation t ? 10 s 94 112 junction-to-ambient thermal resistance a steady state r ja 115 132 t ? 10 s 110 132 junction-to-ambient thermal resistance b steady state r ja 138 162 junction-to-case thermal resistance steady state r jc 63 78 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. WNMD2160 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d zero gate voltage drain current i dss v ds =16 v, v gs gate-to-source leakage current i gss v ds = 0 v, v gs = 10v 5 ua on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 0.5 0.7 1.0 v v gs = 4.5v, i d = 6.3a v gs = 3.1v, i d = 6.0a drain-to-source on-resistance v gs = 2.5v, i d = 5.5a r ds(on) m ? forward transconductance g fs v ds = 5.0 v, i d = 6.3a 16 s charges, capacitances and gate resistance input capacitance c iss 800 output capacitance c oss 108 reverse transfer capacitance c rss v gs = 0 v, f = 1 . hz, v ds = 10 v 93 pf total gate charge q g(tot) 10.9 threshold gate charge q g(th) 0.62 gate-to-source charge q gs 1.92 gate-to-drain charge q gd v gs = 4.5 v, v ds = 10 v, i d = 6.3 a 2.0 nc switching characteristics turn-on delay time td(on) 410 rise time tr 1200 turn-off delay time td(off) 6100 fall time tf v gs = 4.5 v, v ds =10 v, r l =2.0 ? , r g =6 ? 3500 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 250ua 20 v = 0v 1 ua 15.7 21 18 23 20 26 = 1.0a 0.65 1.5 v WNMD2160 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) rwise noted) output characteristics output characteristics on-resistance vs. drain current on-resistance vs. drain current on-resistance vs. junction temperature on-resistance vs. junction temperature transfer characteristics transfer characteristics on-resistance vs. gate-to-source voltage on-resistance vs. gate-to-source voltage threshold voltage vs. temperature threshold voltage vs. temperature 012345 0 5 10 15 20 25 30 v gs =1.5v v gs =2.0v v gs =3.0v v gs =4.5v i ds -drain to source current(a) v d s -drain to source voltage(v) 246810 10 12 14 16 18 20 22 24 v gs =2.5v v gs =4.5v r ds(on) -on resistance(m : ) i ds -drain-to-source current(a) 12345678 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 t=25 o c t=125 o c t=-50 o c i ds drain to source current (a) v gs -gate to source voltage i d =6.3a r ds(on) -on resistance(m : ) v gs -gate to source voltage(v) -50 0 50 100 150 8 12 16 20 24 i d =6.3a,v gs =4.5a r ds(on) -on-resistance(m : ) temperature( 0 c) -50 0 50 100 150 0.3 0.4 0.5 0.6 0.7 0.8 0.9 i d =250ua v gs(th) gate thershold voltage (v) temperature ( 0 c) WNMD2160 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power body diode forward voltage safe operating power gate charge characteristics 0 4 8 12 16 20 0 1 2 3 4 5 6 7 v ds =10v, i d =7a v gs gate voltage (v) q g( nc ) 0.2 0.4 0.6 0.8 0.4 0.8 1.2 1.6 2.0 02468101214 200 400 600 800 1000 1200 v gs =0v f=100khz cin cout cres c-capacitance(pf) v ds drain to source voltage(v) t=25 0 c t=150 0 c i sd -source to drain current (a) v sd - source to drain voltage (v) 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) power (w) t j(max) =150c t a =25c 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) 10 p s 100 p s 10ms 1ms dc t j(max) =150c, t a =25c 100m 1s 10s r ds(on) limited WNMD2160 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
transient thermal response (junction-to-ambient) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 110 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm WNMD2160 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-23-6l dimensions in millimeter symbol min. typ. max. a 1.050 1.150 1.250 a1 0.000 0.050 0.100 a2 1.050 1.100 1.150 b 0.300 0.400 0.500 c 0.100 0.150 0.200 d 2.820 2.920 3.020 e 1.500 1.600 1.700 e1 2.650 2.800 2.950 e 0.950(bsc) e1 1.800 1.900 2.000 l 0.300 0.600 ? 0 e 8 e WNMD2160 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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