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  fdn340p general description this p-channel logic level mosfet is produced using fairchild semiconductor advanced power trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. these devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc/dc conversion. features ? 2 a, 20 v. r ds(on) = 0. 0 7 w @ v gs = ?4.5 v r ds(on) = 0.1 1 w @ v gs = ?2.5 v. r ds(on) = 0.210 w @ v gs = ?1.8 v. low gate charge (8nc typical) . high performance trench technology for extremely low r ds(on) . high power version of industry standard sot-23 package . identical pin-out to sot-23 with 30% higher power handling capability. g d s supersot -3 tm 340 d s g absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1a) ?2 a ? pulsed ?10 power dissipation for single operation (note 1a) 0 .5 p d (note 1b) 0.46 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 2 50 c/w r q jc thermal resistance, junction-to-case (note 1) 7 5 c/w package marking and ordering information device marking device reel size tape width quantity 340 fdn340p 7?? 8mm 3000 units smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 m a ?20 v d bv dss d t j breakdown voltage temperature coefficient i d = ?250 m a,referenced to 25 c ? 15 mv/ c v ds = ?16 v, v gs = 0 v ?1 m a i dss zero gate voltage drain current t j = 5 5 c ?10 i gssf gate?body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?8 v v ds = 0 v ?100 na on characteristics (note 2) v gs( th ) gate threshold voltage v ds = v gs , i d = ?250 m a ?0.4 ?0. 9 ?1 .5 v d v gs( th) d t j gate threshold voltage temperature coefficient i d = ?250 m a,referenced to 25 c 2 .7 mv/ c v gs = ?4.5 v, i d = ?2 a 0. 0 52 0. 0 7 w t j =125 c 0.075 0.12 v gs = ?2.5 v, i d = ?1.7a, 0.078 0.11 r ds(on) static drain?source on?resistance v gs = ?1.8 v, i d = ?1.2 a, 0.21 i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ? 5 a g fs forward transconductance v ds = ? 4. 5 v, i d = ? 2 a 8 s dynamic characteristics c iss input capacitance 600 pf c oss output capacitance 175 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 80 pf switching characteristics (note 2) t d(on) turn?on delay time 6 1 2 ns t r turn?on rise time 9 18 ns t d(off) turn?off delay time 31 50 ns t f turn?off fall time v dd = ?5 v, i d = ? 0.5 a, v gs = ?4.5 v, r gen = 6 w 2 6 42 ns q g total gate charge 8 11 nc q gs gate?source charge 1.3 nc q gd gate?drain charge v ds = ? 10 v, i d = ? 2 a, v gs = ?4.5 v 2.2 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ? 0.4 2 a v sd drain?source diode forward voltage v gs = 0 v, i s = ? 0.4 2 a (note ) ?0.7 ?1.2 v notes: 1. r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a. 250c/w when mounted on a 0.02in 2 pad of 2 oz copper b. 270c/w when mounted on a .001 in 2 pad of 2 oz copper scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% fdn340p smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com


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Price & Availability of FDN339AN
Newark

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
58M6631		 onsemi Mosfet Transistor, N Channel, 3 A, 20 V, 35 Mohm, 4.5 V, 850 Mv Rohs Compliant: Yes |Onsemi FDN339AN 500: USD0.23
250: USD0.262
100: USD0.294
50: USD0.359
25: USD0.422
1: USD0.489
 BuyNow
64321
FDN339AN
34C0138		 onsemi Mosfet, N Ch, 20V, 3A, Sot-23-3; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Onsemi FDN339AN 500: USD0.23
250: USD0.262
100: USD0.294
50: USD0.359
25: USD0.422
1: USD0.489
 BuyNow
19460
FDN339AN
27AC5695		 onsemi 20V N-Fet 40 Mo Ssot3 Rohs Compliant: Yes |Onsemi FDN339AN 1: USD0.16
 BuyNow
6000
FDN339AN
67R2060		 onsemi Mosfet, N Ch, 20V, 3A, Sot-23-3; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Onsemi FDN339AN 30000: USD0.139
18000: USD0.146
12000: USD0.156
6000: USD0.167
3000: USD0.181
 BuyNow
0

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN-NL-ML
5375-FDN339AN-NL-MLTR-ND		 MOSLEADER N-Channel 20V 3A SOT-23-3 150000: USD0.0245
75000: USD0.02723
30000: USD0.02902
15000: USD0.03028
6000: USD0.03122
3000: USD0.03185
1000: USD0.03416
200: USD0.035
 BuyNow
300000
FDN339AN
FDN339ANTR-ND		 onsemi MOSFET N-CH 20V 3A SUPERSOT3 30000: USD0.13802
9000: USD0.14128
6000: USD0.15215
3000: USD0.1603
 BuyNow
24000
FDN339AN
FDN339ANCT-ND		 onsemi MOSFET N-CH 20V 3A SUPERSOT3 1000: USD0.17932
500: USD0.22062
100: USD0.2826
10: USD0.406
1: USD0.48
 BuyNow
2806
FDN339AN
FDN339ANDKR-ND		 onsemi MOSFET N-CH 20V 3A SUPERSOT3 1000: USD0.17932
500: USD0.22062
100: USD0.2826
10: USD0.406
1: USD0.48
 BuyNow
0
FDN339AN_G
FDN339AN_G-ND		 onsemi MOSFET N-CH 20V 3A SUPERSOT3 BuyNow
0

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
FDN339AN		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN339AN) 24000: USD0.10431
18000: USD0.1062
12000: USD0.10809
6000: USD0.10998
3000: USD0.118
 BuyNow
6000
FDN339AN
FDN339AN		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN339AN) RFQ
0
FDN339AN
FDN339AN		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN339AN) 600000: USD0.11706
300000: USD0.12083
60000: USD0.12461
30000: USD0.12838
18000: USD0.13216
12000: USD0.13594
6000: USD0.13971
 BuyNow
0
FDN339AN
34C0138		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 34C0138) 250: USD0.283
100: USD0.316
50: USD0.37
25: USD0.423
1: USD0.489
 BuyNow
0
FDN339AN
58M6631		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 58M6631) 250: USD0.283
100: USD0.316
50: USD0.37
25: USD0.423
1: USD0.489
 BuyNow
0

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
512-FDN339AN		 onsemi MOSFETs SSOT-3 N-CH 20V 1: USD0.47
10: USD0.406
100: USD0.283
500: USD0.221
1000: USD0.18
3000: USD0.152
9000: USD0.141
24000: USD0.138
 BuyNow
18740

Arrow Electronics

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
E02:0323_00841841		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SOT-23 T/R 30000: USD0.1157
24000: USD0.1275
9000: USD0.1303
6000: USD0.139
3000: USD0.1405
 BuyNow
9000
FDN339AN
V72:2272_06300796		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SOT-23 T/R 250: USD0.1529
100: USD0.2775
25: USD0.372
10: USD0.3962
1: USD0.4563
 BuyNow
6350

Future Electronics

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 onsemi Single N-Channel 20 V 0.061 Ohm 0.5 W PowerTrenChannel SMT Mosfet - SSOT-3 30000: USD0.135
15000: USD0.14
9000: USD0.142
6000: USD0.143
3000: USD0.146
 BuyNow
81000

Verical

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
81023324		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SOT-23 T/R 30000: USD0.1151
24000: USD0.1268
9000: USD0.1296
6000: USD0.1383
3000: USD0.1397
 BuyNow
9000
FDN339AN
70802750		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SOT-23 T/R 250: USD0.1529
100: USD0.2775
43: USD0.372
 BuyNow
6350

Bristol Electronics

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 Fairchild Semiconductor Corporation RFQ
40
FDN339AN
 FC RFQ
24

Quest Components

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 Fairchild Semiconductor Corporation 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1411: USD0.1266
297: USD0.1418
1: USD0.3039
 BuyNow
1956
FDN339AN
 Fairchild Semiconductor Corporation 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 112: USD0.3
14: USD0.45
1: USD1
 BuyNow
1116
FDN339AN
 Fairchild Semiconductor Corporation 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 465: USD0.3446
117: USD0.4308
1: USD0.8615
 BuyNow
940

TME

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
FDN339AN		 onsemi Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3 3000: USD0.228
500: USD0.245
100: USD0.274
25: USD0.309
3: USD0.518
 BuyNow
5148

ComSIT USA

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 onsemi N-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RFQ
2120

Richardson RFPD

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
FDN339AN		 onsemi POWER MOSFET TRANSISTOR 6000: USD0.13
 BuyNow
0

Velocity Electronics

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 Fairchild Semiconductor Corporation Our Stock RFQ
192

Chip 1 Exchange

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 onsemi INSTOCK RFQ
3900
FDN339AN
 INSTOCK RFQ
44

Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
FDN339AN		 onsemi Trans MOSFET N-CH 20V 3A 3-Pin SuperSOT T/R (Alt: FDN339AN) BuyNow
3000

Flip Electronics

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 onsemi Stock, ship today 1: USD0.09
 RFQ
132717

New Advantage Corporation

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 onsemi Single N-Channel 20 V 0.061 Ohm 0.5 W PowerTrenChannel SMT Mosfet - SSOT-3 3000: USD0.1757
69000: USD0.164
 BuyNow
69000

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 Fairchild Semiconductor Corporation RFQ
140831
FDN339AN
 MFG UPON REQUEST RFQ
197307

Win Source Electronics

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 Fairchild Semiconductor Corporation MOSFET N-CH 20V 3A SSOT3 75: USD0.707
175: USD0.58
270: USD0.562
370: USD0.544
480: USD0.526
640: USD0.471
 BuyNow
75634
FDN339AN-NL
 Fairchild Semiconductor Corporation 75: USD0.707
175: USD0.58
270: USD0.562
370: USD0.544
480: USD0.526
640: USD0.471
 BuyNow
79070

Wuhan P&S

Part # Manufacturer Description Price BuyNow  Qty.
FDN339AN
 onsemi N-Ch PowerTrench MOSFET 20V,3A,35m�� 1: USD0.33
100: USD0.22
500: USD0.18
1000: USD0.16
 BuyNow
3000

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