2014-02-25 rev.2.0 TK16G60W5 1 mosfets silicon n-channel mos (dtmos ) TK16G60W5 TK16G60W5 TK16G60W5 TK16G60W5 start of commercial production 2013-10 1. 1. 1. 1. applications applications applications applications ? switching voltage regulators 2. 2. 2. 2. features features features features (1) fast reverse recovery time: t rr = 100 ns (typ.) (2) low drain-source on-resistance: r ds(on) = 0.18 ? (typ.) by used to super junction structure : dtmos (3) easy to control gate switching (4) enhancement mode: v th = 3 to 4.5 v (v ds = 10 v, i d = 0.79 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1: gate 2: drain (heatsink) 3: source 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics drain-source voltage gate-source voltage drain current (dc) drain current (pulsed) power dissipation single-pulse avalanche energy avalanche current reverse drain current (dc) reverse drain current (pulsed) channel temperature storage temperature (t c = 25 ) (note 1) (note 1) (note 2) (note 1) (note 1) symbol v dss v gss i d i dp p d e as i ar i dr i drp t ch t stg rating 600 30 15.8 63.2 130 194 4.0 15.8 63.2 150 -55 to 150 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). d2pak
2014-02-25 rev.2.0 TK16G60W5 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal characteristics characteristics channel-to-case thermal resistance symbol r th(ch-c) max 0.962 unit /w note 1: ensure that the channel temperature does not exceed 150 . note 2: v dd = 90 v, t ch = 25 (initial), l = 21.2 mh, r g = 25 ? , i ar = 4.0 a note: this transistor is sensitive to electrostatic discharge and should be handled with care.
2014-02-25 rev.2.0 TK16G60W5 3 6. 6. 6. 6. electrical characteristics electrical characteristics electrical characteristics electrical characteristics 6.1. 6.1. 6.1. 6.1. static characteristics (t static characteristics (t static characteristics (t static characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics gate leakage current drain cut-off current drain-source breakdown voltage gate threshold voltage drain-source on-resistance symbol i gss i dss v (br)dss v th r ds(on) test condition v gs = 30 v, v ds = 0 v v ds = 600 v, v gs = 0 v i d = 10 ma, v gs = 0 v v ds = 10 v, i d = 0.79 ma v gs = 10 v, i d = 7.9 a min 600 3 typ. 0.18 max 1 100 4.5 0.23 unit a v ? 6.2. 6.2. 6.2. 6.2. dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics input capacitance reverse transfer capacitance output capacitance effective output capacitance gate resistance switching time (rise time) switching time (turn-on time) switching time (fall time) switching time (turn-off time) mosfet dv/dt ruggedness symbol c iss c rss c oss c o(er) r g t r t on t f t off dv/dt test condition v ds = 300 v, v gs = 0 v, f = 1 mhz v ds = 0 to 400 v, v gs = 0 v v ds = open, f = 1 mhz see figure 6.2.1 v dd = 0 to 400 v, i d = 7.9 a min 50 typ. 1350 4 35 55 6 40 75 5 100 max unit pf ? ns v/ns fig. fig. fig. fig. 6.2.1 6.2.1 6.2.1 6.2.1 switching time test circuit switching time test circuit switching time test circuit switching time test circuit 6.3. 6.3. 6.3. 6.3. gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics total gate charge (gate-source plus gate-drain) gate-source charge 1 gate-drain charge symbol q g q gs1 q gd test condition v dd 400 v, v gs = 10 v, i d = 15.8 a min typ. 43 11 27 max unit nc 6.4. 6.4. 6.4. 6.4. source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics diode forward voltage reverse recovery time reverse recovery charge peak reverse recovery current diode dv/dt ruggedness symbol v dsf t rr q rr i rr dv/dt test condition i dr = 15.8 a, v gs = 0 v i dr = 7.9 a, v gs = 0 v -di dr /dt = 100 a/ s i dr = 7.9 a, v gs = 0 v, v dd = 400 v min 50 typ. 100 0.4 9.7 max -1.7 160 unit v ns c a v/ns
2014-02-25 rev.2.0 TK16G60W5 4 7. 7. 7. 7. marking marking marking marking fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking marking marking marking
2014-02-25 rev.2.0 TK16G60W5 5 8. 8. 8. 8. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) fig. fig. fig. fig. 8.1 8.1 8.1 8.1 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.2 8.2 8.2 8.2 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.3 8.3 8.3 8.3 i i i i d d d d - v - v - v - v gs gs gs gs fig. fig. fig. fig. 8.4 8.4 8.4 8.4 v v v v ds ds ds ds - v - v - v - v gs gs gs gs fig. fig. fig. fig. 8.5 8.5 8.5 8.5 v v v v dss dss dss dss - t - t - t - t a a a a fig. fig. fig. fig. 8.6 8.6 8.6 8.6 r r r r ds(on) ds(on) ds(on) ds(on) - i - i - i - i d d d d
2014-02-25 rev.2.0 TK16G60W5 6 fig. fig. fig. fig. 8.7 8.7 8.7 8.7 r r r r ds(on) ds(on) ds(on) ds(on) - t - t - t - t a a a a fig. fig. fig. fig. 8.8 8.8 8.8 8.8 i i i i dr dr dr dr - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.9 8.9 8.9 8.9 c - v c - v c - v c - v ds ds ds ds fig. fig. fig. fig. 8.10 8.10 8.10 8.10 e e e e oss oss oss oss - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.11 8.11 8.11 8.11 v v v v th th th th - t - t - t - t a a a a fig. fig. fig. fig. 8.12 8.12 8.12 8.12 dynamic input/output characteristics dynamic input/output characteristics dynamic input/output characteristics dynamic input/output characteristics
2014-02-25 rev.2.0 TK16G60W5 7 fig. fig. fig. fig. 8.13 8.13 8.13 8.13 r r r r th th th th - t - t - t - t w w w w (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.14 8.14 8.14 8.14 e e e e as as as as - t - t - t - t ch ch ch ch (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.15 8.15 8.15 8.15 p p p p d d d d - t - t - t - t c c c c (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.16 8.16 8.16 8.16 test circuit/waveform test circuit/waveform test circuit/waveform test circuit/waveform
2014-02-25 rev.2.0 TK16G60W5 8 fig. fig. fig. fig. 8.17 8.17 8.17 8.17 safe operating area safe operating area safe operating area safe operating area (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) note: the above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
2014-02-25 rev.2.0 TK16G60W5 9 package dimensions package dimensions package dimensions package dimensions unit: mm weight: 1.59 g (typ.) package name(s) toshiba: 2-11h1a nickname: d2pak
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