symbol v ds v gs i dm t j , t stg symbol typ max 300 360 350 425 r jl 280 320 junction and storage temperature range a p d c 0.35 0.22 -55 to 150 t a =70c i d -0.7 -0.5 -3 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 8 gate-source voltage drain-source voltage -20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO7403 p-channel enhancement mode field effect transistor features v ds (v) = -20v i d = -0.7a (v gs = -4.5v) r ds(on) < 470m ? (v gs = -4.5v) r ds(on) < 625m ? (v gs = -2.5v) r ds(on) < 900m ? (v gs = -1.8v) general description the AO7403 uses advanced trench technology to provide excellent r ds(on) , low gate charge, and operation with gate voltages as low as 1.8v, in the small sot323 footprint. it can be used for a wide variety of applications, including load switching, low current inverters and low current dc-dc converters. it is esd protected to 2kv hbm. standard product AO7403 is pb-free (meets rohs & sony 259 specifications). AO7403l is a green product ordering option. AO7403 and AO7403l are electrically identical. s g d sc-70 (sot-323) to p vie w d s g alpha & omega semiconductor, ltd. free datasheet http:///
AO7403 symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 10 a v gs(th) -0.5 -0.6 -0.9 v i d(on) -3 a 388 470 t j =125c 542 660 519 625 m ? 666 900 m ? g fs 1.7 s v sd -0.86 -1 v i s -0.4 a c iss 114 pf c oss 17 pf c rss 14 pf r g 12 ? q g 1.44 nc q gs 0.14 nc q gd 0.35 nc t d(on) 6.5 ns t r 6.5 ns t d(off) 18.2 ns t f 5.5 ns t rr 10 ns q rr 3nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-0.7a, di/dt=100a/ s drain-source breakdown voltage i d =-250 a, v gs =0v v gs =-1.8v, i d =-0.5a v gs =-4.5v, i d =-0.7a reverse transfer capacitance i f =-0.7a, di/dt=100a/ s v gs =0v, v ds =-10v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-16v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-2.5v, i d =-0.6a i s =-0.5a,v gs =0v v ds =-5v, i d =-0.7a turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =14.3 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-0.7a gate source charge output capacitance turn-on delaytime dynamic parameters gate drain charge on state drain current v gs =-4.5v, v ds =-5v maximum body-diode continuous current input capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev4: aug 2008 alpha & omega semiconductor, ltd. free datasheet http:///
AO7403 typical electrical and thermal characteristics 0 2 4 6 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) -3.5v v gs =-2.0v -3v -6v -8v -4.5v 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -v gs (volts) figure 2: transfer characteristics -i d (a) 300 400 500 600 700 800 900 1000 01234 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.4 0.8 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-4.5v v gs =-1.8v i d =-0.6a i d =-0.5a 300 400 500 600 700 800 900 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-1.8v i d =-0.7a 25c 125c i d =-0.7a -4v v gs =-2.5v v gs =-2.5v -2.5v alpha & omega semiconductor, ltd. free datasheet http:///
AO7403 typical electrical and thermal characteristics 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 50 100 150 200 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 2 4 6 8 10 12 14 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0 .1 1 s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-10v i d =-0.7a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =425c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s t o n t p d t o n p d alpha & omega semiconductor, ltd. free datasheet http:///
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