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| Datasheet File OCR Text: |
| IPB027N10N3 g "%&$ !"# ? 3 power-transistor features q ' 3 8 1 > > 5 < > ? b = 1 < < 5 f 5 < q h 3 5 < < 5 > d 7 1 d 5 3 8 1 b 7 5 h r 9h"[z# @ b ? 4 e 3 d ( & q . 5 b i < ? g ? > b 5 c 9 c d 1 > 3 5 r 9h"[z# q
t ? @ 5 b 1 d 9 > 7 d 5 = @ 5 b 1 d e b 5 q ) 2 6 b 5 5 < 5 1 4 @ < 1 d 9 > 7 + ? " , 3 ? = @ < 9 1 > d q * e 1 < 9 6 9 5 4 1 3 3 ? b 4 9 > 7 d ? $ )# 6 ? b d 1 b 7 5 d 1 @ @ < 9 3 1 d 9 ? > q # 4 5 1 < 6 ? b 8 9 7 8 6 b 5 a e 5 > 3 i c g 9 d 3 8 9 > 7 1 > 4 c i > 3 8 b ? > ? e c b 5 3 d 9 6 9 3 1 d 9 ? > q " 1 < ? 7 5 > 6 b 5 5 1 3 3 ? b 4 9 > 7 d ? #
maximum ratings, 1 d t v t e > < 5 c c ? d 8 5 b g 9 c 5 c @ 5 3 9 6 9 5 4 parameter symbol conditions unit ? > d 9 > e ? e c 4 b 1 9 > 3 e b b 5 > d i 9 t 8 t *# )*( 6 t 8
t )*( ) e < c 5 4 4 b 1 9 > 3 e b b 5 > d *# i 9$\ax_q t 8 t ,0( f 1 < 1 > 3 8 5 5 > 5 b 7 i c 9 > 7 < 5 @ e < c 5 e 6h i 9
r =h " )((( y@ ! 1 d 5 c ? e b 3 5 f ? < d 1 7 5 v =h q*( j ) ? g 5 b 4 9 c c 9 @ 1 d 9 ? > p `[` t 8 t +(( k ( @ 5 b 1 d 9 > 7 1 > 4 c d ? b 1 7 5 d 5 = @ 5 b 1 d e b 5 t v t _`s t # 3 < 9 = 1 d 9 3 3 1 d 5 7 ? b i # ' # value )# $ , - 1 > 4 $ , *# , 5 5 6 9 7 e b 5 v 9h )(( j r 9h"[z#$ymd *&/ y " i 9 )*( 6 product summary type # ) ' ' ! package e=%id*.+%+ marking (*/c)(c + 5 f @ 1 7 5 IPB027N10N3 g parameter symbol conditions unit min. typ. max. thermal characteristics - 8 5 b = 1 < b 5 c 9 c d 1 > 3 5 : e > 3 d 9 ? > 3 1 c 5 r `t@8 % % (&- a'k - 8 5 b = 1 < b 5 c 9 c d 1 > 3 5 r `t@6 = 9 > 9 = 1 < 6 ? ? d @ b 9 > d : e > 3 d 9 ? > 1 = 2 9 5 > d 3 = * 3 ? ? < 9 > 7 1 b 5 1 +# % % ,( electrical characteristics, 1 d t v t e > < 5 c c ? d 8 5 b g 9 c 5 c @ 5 3 9 6 9 5 4 static characteristics b 1 9 > c ? e b 3 5 2 b 5 1 ; 4 ? g > f ? < d 1 7 5 v "7g#9hh v =h . i 9 = )(( % % j ! 1 d 5 d 8 b 5 c 8 ? < 4 f ? < d 1 7 5 v =h"`t# v 9h 4 v =h i 9 v * *&/ +&- 0 5 b ? 7 1 d 5 f ? < d 1 7 5 4 b 1 9 > 3 e b b 5 > d i 9hh v 9h . v =h . t v t % (&) ) r6 v 9h . v =h . t v t % )( )(( ! 1 d 5 c ? e b 3 5 < 5 1 ; 1 7 5 3 e b b 5 > d i =hh v =h . v 9h . % ) )(( z6 b 1 9 > c ? e b 3 5 ? > c d 1 d 5 b 5 c 9 c d 1 > 3 5 r 9h"[z# v =h . i 9 % *&+ *&/ y " v =h . i 9 % *&0 ,&- ! 1 d 5 b 5 c 9 c d 1 > 3 5 r = % )&1 % " i^mz_o[zpao`mzoq g r_ g v 9h g5*g i 9 g r 9h"[z#ymd i 9 1, )00 % h +# 5 f 9 3 5 ? > = = h = = h = = 5 @ ? h i ) + g 9 d 8 3 = * ? > 5 < 1 i 5 b v = d 8 9 3 ; 3 ? @ @ 5 b 1 b 5 1 6 ? b 4 b 1 9 > 3 ? > > 5 3 d 9 ? > ) 9 c f 5 b d 9 3 1 < 9 > c d 9 < < 1 9 b values + 5 f @ 1 7 5 IPB027N10N3 g parameter symbol conditions unit min. typ. max. dynamic characteristics # > @ e d 3 1 @ 1 3 9 d 1 > 3 5 c u__ % )))(( ),0(( \< ( e d @ e d 3 1 @ 1 3 9 d 1 > 3 5 c [__ % )1,( *-0( + 5 f 5 b c 5 d b 1 > c 6 5 b 3 1 @ 1 3 9 d 1 > 3 5 c ^__ % .1 % - e b > ? > 4 5 < 1 i d 9 = 5 t p"[z# % +, % z_ + 9 c 5 d 9 = 5 t ^ % -0 % - e b > ? 6 6 4 5 < 1 i d 9 = 5 t p"[rr# % 0, % 1 < < d 9 = 5 t r % *0 % ! 1 d 5 8 1 b s 5 8 1 b 1 3 d 5 b 9 c d 9 3 c ,# ! 1 d 5 d ? c ? e b 3 5 3 8 1 b 7 5 q s_ % ,0 % z8 ! 1 d 5 d ? 4 b 1 9 > 3 8 1 b 7 5 q sp % */ % , g 9 d 3 8 9 > 7 3 8 1 b 7 5 q _c % ,* % ! 1 d 5 3 8 1 b 7 5 d ? d 1 < q s % )-- *(. ! 1 d 5 @ < 1 d 5 1 e f ? < d 1 7 5 v \xm`qma % ,&+ % j ( e d @ e d 3 8 1 b 7 5 q [__ v 99 . v =h . % *(- */+ z8 reverse diode 9 ? 4 5 3 ? > d 9 > ? e c 6 ? b g 1 b 4 3 e b b 5 > d i h % % )*( 6 9 ? 4 5 @ e < c 5 3 e b b 5 > d i h$\ax_q % % ,0( 9 ? 4 5 6 ? b g 1 b 4 f ? < d 1 7 5 v h9 v =h . i < t v t % ) )&* j + 5 f 5 b c 5 b 5 3 ? f 5 b i d 9 = 5 t ^^ % 0. % z_ + 5 f 5 b c 5 b 5 3 ? f 5 b i 3 8 1 b 7 5 q ^^ % *+* % z8 ,# , 5 5 6 9 7 e b 5 6 ? b 7 1 d 5 3 8 1 b 7 5 @ 1 b 1 = 5 d 5 b 4 5 6 9 > 9 d 9 ? > v g . i < 4 100 a p i < 'p t v c t 8 t values v =h . v 9h . f & " j v 99 . v =h . i 9 r = " v 99 . i 9 v =h d ? . + 5 f @ 1 7 5 IPB027N10N3 g 1 power dissipation 2 drain current p `[` 4r" t 8 # i 9 4r" t 8 v =h " . 3 safe operating area 4 max. transient thermal impedance i 9 4r" v 9h t 8 t d 4( z `t@8 4r" t \ # @ 1 b 1 = 5 d 5 b t \ @ 1 b 1 = 5 d 5 b d 4 t \ ' t v c v c v c = c = c 98 10 3 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [ a ] < 9 = 9 d 5 4 2 i ? > c d 1 d 5 ^q_u_`mzoq c 9 > 7 < 5 @ e < c 5 (&() (&(* (&(- (&) (&* (&- 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z t h j c [ k / w ] 0 50 100 150 200 250 300 350 0 50 100 150 200 t c [c] p t o t [ w ] 0 20 40 60 80 100 120 140 0 50 100 150 200 t c [c] i d [ a ] + 5 f @ 1 7 5 IPB027N10N3 g 5 typ. output characteristics 6 typ. drain-source on resistance i 9 4r" v 9h t v t r 9h"[z# 4r" i 9 t v t @ 1 b 1 = 5 d 5 b v =h @ 1 b 1 = 5 d 5 b v =h 7 typ. transfer characteristics 8 typ. forward transconductance i 9 4r" v =h k v 9h g5*g i 9 g r 9h"[z#ymd g r_ 4r" i 9 t v t @ 1 b 1 = 5 d 5 b t v . . . . . 0 1 2 3 4 5 0 40 80 120 160 i d [a] r d s ( o n ) [ m ] t t 0 50 100 150 200 250 300 0 2 4 6 v gs [v] i d [ a ] 0 40 80 120 160 200 240 0 40 80 120 160 i d [a] g f s [ s ] . . . . . . ( 0 50 100 150 200 250 300 0 1 2 v ds [v] i d [ a ] + 5 f @ 1 7 5 IPB027N10N3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r 9h"[z# 4r" t v i 9 v =h . v =h"`t# 4r" t v v =h 4 v 9h @ 1 b 1 = 5 d 5 b i 9 11 typ. capacitances 12 forward characteristics of reverse diode c 4r" v 9h v =h . f & " j i < 4r" v h9 # @ 1 b 1 = 5 d 5 b t v `e\ 0 1 2 3 4 5 6 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ m ] v v 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v g s ( t h ) [ v ] 8u__ 8[__ 8^__ 10 5 10 4 10 3 10 2 10 1 0 20 40 60 80 v ds [v] c [ p f ] t t t t 10 0 10 1 10 2 10 3 0 0.5 1 1.5 2 v sd [v] i f [ a ] + 5 f @ 1 7 5 IPB027N10N3 g 13 avalanche characteristics 14 typ. gate charge i 6h 4r" t 6j r =h " v =h 4r" q sm`q i 9 @ e < c 5 4 @ 1 b 1 = 5 d 5 b t v"_`m^`# @ 1 b 1 = 5 d 5 b v 99 15 drain-source breakdown voltage 16 gate charge waveforms v 7g"9hh# 4r" t v i 9 = . . . 0 2 4 6 8 10 0 40 80 120 160 q gate [nc] v g s [ v ] 90 95 100 105 110 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] v =h q g ate v s _"`t# q s "`t# q s _ q s p q _c q g t t t 1 10 100 1000 1 10 100 1000 t av [s] i a s [ a ] + 5 f @ 1 7 5 IPB027N10N3 g pg-to263-3: outline + 5 f @ 1 7 5 IPB027N10N3 g published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. + 5 f @ 1 7 5 |
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