UG4A thru ug4d vishay general semiconductor document number: 88763 revision: 20-aug-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 miniature ultrafast plastic rectifier features ? glass passivated chip junction ? ultrafast reverse recovery time ? low forward voltage drop ? low switching losses, high efficiency ? high forward surge capability ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. mechanical data case: do-201ad epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 4.0 a v rrm 50 v to 200 v i fsm 150 a t rr 20 ns v f 0.95 v t j max. 150 c do-201ad maximum ratings (t a = 25 c unless otherwise noted) parameter symbol UG4A ug4b ug4c ug4d unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 4.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
UG4A thru ug4d vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88763 revision: 20-aug-07 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage (1) i f = 4.0 a v f 0.95 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 100 c i r 5.0 300 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 20 ns typical reverse recovery time i f = 4.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 10 % i rm t j = 25 c t j = 100 c t rr 30 50 ns typical stored charge i f = 4.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 10 % i rm t j = 25 c t j = 100 c q rr 15 30 nc typical junction capacitance 4.0 v, 1 mhz c j 20 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol UG4A ug4b ug4c ug4d unit typical thermal resistance (1) r ja 25 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ug4d-e3/54 1.138 54 1400 13" diameter paper tape and reel ug4d-e3/73 1.138 73 1000 ammo pack packaging figure 1. forward current derating curves 0 25 50 75 100 125 150 175 0 1.0 2.0 3.0 4.0 5.0 6.0 resisti v e or ind u cti v e load 0.375" (9.5 mm) lead length t l lead temperat u re t a , am b ient temperat u re p. c . b . m o u nted 0.5 x 0.5" (12 x 12 mm) copper pads a v erage for w ard rectified c u rrent (a) temperat u re (c) figure 2. maximum non-repetitive peak forward surge current 1 10 100 10 100 1000 1 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t l = 75 c 8 .3 ms single half sine- w a v e
UG4A thru ug4d vishay general semiconductor document number: 88763 revision: 20-aug-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reverse leakage characteristics 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 0.01 0.1 1 10 100 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 100 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 0 20 40 60 8 0 100 0.01 0.1 1 10 100 1000 t j = 100 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse leakage c u rrent ( a) figure 5. reverse swit ching charateristics figure 6. typical junction capacitance 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 t rr q rr di/dt = 100 a/ s di/dt = 100 a/ s di/dt = 20 a/ s di/dt = 50 a/ s di/dt = 150 a/ s di/dt = 150 a/ s di/dt = 20 a/ s di/dt = 50 a/ s i f = 4.0 a v r = 30 v j u nction temperat u re (c) reco v ered stored change/re v erse reco v ery time, nc/ns 0.1 1 10 100 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capaci tance (pf) do-201ad 0.210 (5.3) 0.190 (4. 8 ) dia. 0.052 (1.32) 0.04 8 (1.22) dia. 1.0 (25.4) mi n . 1.0 (25.4) mi n . 0.375 (9.5) 0.2 8 5 (7.2)
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