mmbta55 / mmbta56 pnp small signal surf ace mount transistor features ? epitaxial planar die construction ? complementary npn types available (mmbta05 / mmbta06) ? ideal for low power amplification and switching ? lead, halogen and antimony free, rohs compliant "green" device (notes 3 and 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: solderable per mil-std-202, method 208 ? lead free plating (matte tin finish annealed over alloy 42 leadframe). ? mmbta55 marking (see page 3): k2h, k2g ? mmbta56 marking (see page 3): k2g ? ordering information: see page 3 ? weight: 0.008 grams (approximate) sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm a e j l top view m b c c be h g d k e b c maximum ratings @t a = 25c unless otherwise specified characteristic symbol mmbta55 mmbta56 unit collector-base voltage v cbo -60 -80 v collector-emitter voltage v ceo -60 -80 v emitter-base voltage v ebo -4.0 v collector current - continuous (note 1) i c -500 ma power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage mmbta55 mmbta56 v (br)cbo -60 -80 ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage mmbta55 mmbta56 v (br)ceo -60 -80 ? v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -4.0 ? v i e = -100 a, i c = 0 collector cutoff current mmbta55 mmbta56 i cbo ? -100 na v cb = -60v, i e = 0 v cb = -80v, i e = 0 collector cutoff current mmbta55 mmbta56 i cex ? -100 na v ce = -60v, i bo = 0v v ce = -80v, i bo = 0v on characteristics (note 2) dc current gain h fe 100 ? ? i c = -10ma, v ce = -1.0v i c = -100ma, v ce = -1.0v collector-emitter saturation voltage v ce(sat) ? -0.25 v i c = -100ma, i b = -10ma base-emitter saturation voltage v be(sat) ? -1.2 v i c = -100ma, v ce = -1.0v small signal characteristics current gain-bandwidth product f t 50 ? mhz v ce = -1.0v, i c = -100ma, f = 100mhz notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0. 062 inch; pad layout as shown on diodes inc. suggested pad layou t document ap02001, which can be found on our website at http://www.d iodes.com/datasheets/ap02001.pdf. 2. short duration pulse test used to minimize self-heating effect. 3. no purposefully added lead. halogen and antimony free. 4. product manufactured with data code v9 (week 33, 2008) and newer are built with green molding compound. product manufactur ed prior to date code v9 are built with non-green molding compound and may contain halogens or sb 2 o 3 fire retardants. ds30054 rev. 11 - 2 1 of 3 www.diodes.com mmbta55 / mmbta56 ? diodes incorporated
0 50 100 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 max power dissipation vs ambient temperature a 150 200 250 300 350 400 0 note 1 0 0.05 0.10 0.15 0.20 0.25 11 0 100 1,000 v, c o lle c t o r t o emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 2 collector emitter saturation voltage vs. collector current c i i c b = 10 t = -50c a t= 25c a t = 150c a 10 1,000 100 1 10 1,000 100 h, d c c u r r e n t g ai n fe i , collector current (ma) fig. 3 dc current gain vs. collector current c t = -50c a t= 25c a t = 150c a v= 5v ce 1 0.1 0.1 10 100 v , base emi t t e r v o l t a g e (v) be(on) i , collector current (ma) fig. 4 base emitter voltage vs. collector current c 0.2 0.3 0.4 0.6 0.5 0.8 0.7 0.9 1.0 v= 5v ce t= 25c a t= -50c a t = 150c a 1 10 100 11 0 i , collector current (ma) fig. 5 gain-bandwidth product vs. collector current c f, 1 0 0 g ai n -ba n dwid t h p r o d u c t (m h z) t v= 5v ce ds30054 rev. 11 - 2 2 of 3 www.diodes.com mmbta55 / mmbta56 ? diodes incorporated
ordering information (note 5) ds30054 rev. 11 - 2 3 of 3 www.diodes.com mmbta55 / mmbta56 ? diodes incorporated device packaging shipping mmbta55-7-f sot-23 3000/tape & reel mmbta56-7-f sot-23 3000/tape & reel notes: 5. for packaging details, go to our websit e at http://www.diodes.c om/datasheets/ap02007.pdf. marking information k2x ym k2x = product type marking code, ex: k2h = mmbta55 ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 code j k l m n p r s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.
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