IRFR310 bv dss = 400 v r ds(on) = 3.6 w i d = 1.7 a 400 1.7 1.1 6 30 116 1.7 2.6 4.0 2.5 26 0.21 - 55 to +150 300 4.76 50 110 -- -- -- avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current: 10 m a (max.) @ v ds = 400v low r ds(on) : 2.815 w (typ.) $gydqfhg 3rzhu 026)(7 thermal resistance junction-to-case junction-to-ambient junction-to-ambient r q jc r q ja r q ja c/w characteristic max. units symbol typ. features * * when mounted on the minimum pad size recommended (pcb mount). absolute maximum ratings drain-to-source voltage continuous drain current (t c =25 c) continuous drain current (t c =100 c) drain current-pulsed (1) gate-to-source voltage single pulsed avalanche energy (2) avalanche current (1) repetitive avalanche energy (1) peak diode recovery dv/dt (3) total power dissipation (t a =25 c) total power dissipation (t c =25 c) linear derating factor operating junction and storage temperature range maximum lead temp. for soldering purposes, 1/8 from case for 5-seconds characteristic value units symbol i dm v gs e as i ar e ar dv/dt p d i d t j , t stg t l a v mj a mj v/ns w w w/ c a c v dss v * d-pak 1. gate 2. drain 3. source 1 2 3 i-pak 1 3 2 ?1999 fairchild semiconductor corporation rev. b
IRFR310 400 -- 2.0 -- -- -- -- -- 0.53 -- -- -- -- -- 35 13 11 15 38 13 10 1.8 5.4 -- -- 4.0 100 -100 10 100 3.6 -- 280 42 17 30 40 90 35 14 -- -- 1.10 215 -- -- -- 224 0.87 1.7 6 1.5 -- -- notes; (1) repetitive rating: pulse width limited by maximum junction temperature (2) l=70mh, i as =1.7a, v dd =50v, r g =27 w , starting t j =25 c (3) i sd 2a, di/dt 80a/ m s, v dd bv dss , starting t j =25 c (4) pulse test: pulse width = 250 m s, duty cycle 2% (5) essentially independent of operating temperature 1&+$11(/ 32:(5 026)(7 electrical characteristics (t c =25 c unless otherwise specified) drain-source breakdown voltage breakdown voltage temp. coeff. gate threshold voltage gate-source leakage , forward gate-source leakage , reverse characteristic symbol max. units typ. min. test condition static drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain ( miller ) charge g fs c iss c oss c rss t d(on) t r t d(off) t f q g q gs q gd bv dss d bv/ d t j v gs(th) r ds(on) i gss i dss v v/ c v na m a w w pf ns nc -- -- -- -- -- -- -- -- -- -- -- -- -- v gs =0v,i d =250 m a i d =250 m a see fig 7 v ds =5v,i d =250 m a v gs =30v v gs =-30v v ds =400v v ds =320v,t c =125 c v gs =10v,i d =0.85a (4) v ds =50v,i d =0.85a (4) v dd =200v,i d =2a, r g =24 w see fig 13 (4) (5) v ds =320v,v gs =10v, i d =2a see fig 6 & fig 12 (4) (5) drain-to-source leakage current v gs =0v,v ds =25v,f =1mhz see fig 5 source-drain diode ratings and characteristics continuous source current pulsed-source current (1) diode forward voltage (4) reverse recovery time reverse recovery charge i s i sm v sd t rr q rr characteristic symbol max. units typ. min. test condition -- -- -- -- -- a v ns m c integral reverse pn-diode in the mosfet t j =25 c,i s =1.7a,v gs =0v t j =25 c,i f =2a di f /dt=100a/ m s (4)
IRFR310 10 -1 10 0 10 1 10 -2 10 -1 10 0 @ n otes : 1 . 250 m s p ulse test 2 . t c = 25 o c v gs top : 1 5 v 1 0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bott om : 4.5 v i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -2 10 -1 10 0 25 o c 15 0 o c - 55 o c @ note s : 1. v gs = 0 v 2. v ds = 50 v 3. 2 50 m s puls e t est i d , drain current [a] v gs , gate-source voltage [v] 0123456 0 2 4 6 8 @ n ote : t j = 25 o c v gs = 20 v v gs = 10 v r ds(on) , [ w ] drain-source on-resistance i d , drain current [a] 0. 20. 40. 60. 81. 01. 2 10 -2 10 -1 10 0 15 0 o c 25 o c @ note s : 1. v gs = 0 v 2. 2 50 m s puls e t est i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 0 10 1 0 100 200 300 400 c iss = c gs + c gd ( c ds = s horte d ) c oss = c ds + c gd c rss = c gd @ n otes : 1 . v gs = 0 v 2 . f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0246810 0 5 10 v ds = 320 v v ds = 200 v v ds = 80 v @ note s : i d = 2.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 1&+$11(/ 32:(5 026)(7 fig 1. output characteristics fig 2. transfer characteristics fig 6. gate charge vs. gate-source voltage fig 5. capacitance vs. drain-source voltage fig 4. source-drain diode forward voltage fig 3. on-resistance vs. drain current
IRFR310 -75 -50 -25 0 25 50 75 100 125 150 175 0.8 0.9 1.0 1.1 1.2 @ n otes : 1 . v gs = 0 v 2 . i d = 250 m a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -7 5-5 0-2 5 0 25 50 75 10 012 515 017 5 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 @ note s : 1. v gs = 10 v 2. i d = 1.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 dc 100 m s 1 m s 10 ms @ n otes : 1 . t c = 25 o c 2 . t j = 150 o c 3 . si ngle puls e ope rati on i n thi s ar ea is limi ted by r ds(on) i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 10 012 515 0 0. 0 0. 5 1. 0 1. 5 2. 0 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 single pulse 0.2 0.1 0.01 0.02 0.05 d=0.5 @ notes : 1. z q jc (t)=4.76 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm -t c =p dm *z q jc (t) z q jc (t) , thermal response t 1 , square wave pulse duration [sec] 1&+$11(/ 32:(5 026)(7 fig 7. breakdown voltage vs. temperature fig 8. on-resistance vs. temperature fig 11. thermal response fig 10. max. drain current vs. case temperature fig 9. max. safe operating area p dm t 1 t 2
IRFR310 1&+$11(/ 32:(5 026)(7 fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v out 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd vary t p to obtain required peak i d 10v v dd c l l v ds i d r g t p dut bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v out v in r l dut r g 3ma v gs current sampling (i g ) resistor current sampling (i d ) resistor dut v ds 300nf 50k w 200nf 12v same type as dut current regulator r 1 r 2
IRFR310 1&+$11(/ 32:(5 026)(7 fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + -- l i s driver v gs r g same type as dut v gs dv/dt controlled by r g i s controlled by duty factor d v dd 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
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