? 2009 ixys corporation, all rights reserved features z international standard packages z high blocking voltage z fast switching z high current handling capability z anti-parallel diode advantages z high power density z low gate drive requirement z intergrated diode can be used for protection applications z switched-mode and resonant-mode power supplies z ups z ac motor drives z substitutes for high voltage mosfets ds100166(06/09) bimosfet tm monolithic bipolar mos transistor IXBK75N170A ixbx75n170a v ces = 1700v i c90 = 65a v ce(sat) 6.00v t fi(typ) = 60ns symbol test conditions maximum ratings v ces t j = 25c to 150c 1700 v v cgr t j = 25c to 150c, r ge = 1m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 110 a i c90 t c = 90c 65 a i cm t c = 25c, 1ms 300 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 100 a (rbsoa) clamped inductive load v ce < 0.8 ? v ces p c t c = 25c 1040 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque (to-264 ) 1.13/10 nm/lb.in. f c mounting force (plus247 ) 20..120/4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1700 v v ge(th) i c = 1.5ma, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces , v ge = 0v 50 a t j = 125 c 3 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 42a, v ge = 15v, note 1 4.95 6.00 v t j = 125 c 5.15 v g = gate c = collector e = emitter tab = collector plus247 tm (ixbx) to-264 (ixbk) g (tab) c e (tab) g c e advance technical information
IXBK75N170A ixbx75n170a ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 42a, v ce = 10v, note 1 28 48 s c ies 7200 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 450 pf c res 150 pf q g 358 nc q ge i c = 42a, v ge = 15v, v ce = 0.5 ? v ces 46 nc q gc 148 nc t d(on) 26 ns t ri 40 ns t d(off) 418 ns t fi 60 110 ns e off 3.80 7.00 mj t d(on) 27 ns t ri 38 ns t d(off) 420 ns t fi 175 ns e off 6.35 mj r thjc 0.12 c/w r thcs 0.15 c/w notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . additional provisions for lead-to-lead isolation are required at v ce >1200v. terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) plus 247 tm (ixbx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. inductive load, t j = 25c i c = 42a, v ge = 15v v ce = 0.8 ? v ces , r g = 1 note 2 inductive load, t j = 125c i c = 42a, v ge = 15v v ce = 0.8 ? v ces , r g = 1 note 2 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max v f i f = 42a, v ge = 0v, note 1 4.2 v t rr 360 ns i rm 19 a q rm 3.5 c i f = 42a, v ge = 0v, -di f /dt = 100a/ s v r = 100v, v ge = 0v to-264 aa ( ixbk) outline dim. millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072
? 2009 ixys corporation, all rights reserved IXBK75N170A ixbx75n170a ixys ref: b_75n170a(8t)6-30-09 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 012345678 v ce - volts i c - amperes v ge = 25v 15v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 0 2 4 6 8 10 12 14 16 18 v ce - volts i c - amperes v ge = 25v 15v 7v 9v 11v 5v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 012345678 v ce - volts i c - amperes v ge = 25v 15v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 84a i c = 42a i c = 21a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 84 a t j = 25oc 42 a 21 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
IXBK75N170A ixbx75n170a ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 220 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 11. r everse-bias safe operat ing area 0 20 40 60 80 100 120 200 400 600 800 1000 1200 1400 1600 1800 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 320 360 q g - nanocoulombs v ge - volts v ce = 850v i c = 42a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v f - volts i f - amperes t j = 125oc t j j = 25oc
? 2009 ixys corporation, all rights reserved IXBK75N170A ixbx75n170a fig. 13. inductive turn-off switching energy loss vs. gate resistance 5 6 7 8 9 10 11 12 13 14 15 12345678910 r g - ohms e off - millijoules t j = 125oc , v ge = 15v v ce = 1360v i c = 42a i c = 84a fig. 16. inductive turn-off switching times vs. gate resistance 60 80 100 120 140 160 180 200 220 240 12345678910 r g - ohms t f i - nanoseconds 300 350 400 450 500 550 600 650 700 750 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 1360v i c = 84a i c = 42a fig. 14. inductive turn-off switching energy loss vs. collector current 0 2 4 6 8 10 12 14 20 30 40 50 60 70 80 90 i c - amperes e off - millijoules r g = 1 ? , v ge = 15v v ce = 1360v t j = 125oc t j = 25oc fig. 15. inductive turn-off switching energy loss vs. junction temperature 0 2 4 6 8 10 12 14 16 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules r g = 1 ? , v ge = 15v v ce = 1360v i c = 84a i c = 42a fig. 17. inductive turn-off switching times vs. collector current 0 40 80 120 160 200 240 280 320 20 30 40 50 60 70 80 90 i c - amperes t f i - nanoseconds 280 320 360 400 440 480 520 560 600 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 1360v t j = 125oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 0 40 80 120 160 200 240 280 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 320 340 360 380 400 420 440 460 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 1360v i c = 42a i c = 84a
IXBK75N170A ixbx75n170a ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: b_75n170a(8t)6-30-09 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 20 30 40 50 60 70 80 90 i c - amperes t r i - nanoseconds 22 24 26 28 30 32 34 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 1360v t j = 125oc, 25oc fig. 21. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 22 24 26 28 30 32 34 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 1360v i c = 42a i c = 84a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 12345678910 r g - ohms t r i - nanoseconds 20 25 30 35 40 45 50 55 60 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1360v i c = 42a i c = 84a
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