smd type DTDG23YP features npn epitaxial planar silicon transistor (with built-in resistors and zener diode). high dc current gain. built-in zener diode gives strong protection against reverse surge by l-load (an inductive load). absolute maximum ratings ta = 25 parameter symbol rating unit supply voltage v cc 60 10 v input voltage v in -6 to +40 v i c 1 i cp *1 2 power dissipation p d *2 1.5 w junction temperature t j 150 storage temperature t stg -55to+150 *1 pw 10ms, duty cycle 2% *2 when mounted on 40x40x0.7mm ceramic board. collector current a electrical characteristics ta = 25 parameter symbol testconditons min typ max unit v i(off) v cc =5v,i o = 100 a 0.3 v i(on) v o =0.4v,i o = 100ma 2 output voltage v o(on) i o /i i = 500ma/5ma 0.4 v input current i i v i =5v 3.6 ma output current i o(off) v cc = 40v , v i =0v 0.5 a dc current gain g i v o =2v,i o = 500ma 300 input resistance r 1 1.54 2.2 2.86 k emitter-base resistance r 2 71013 k transistion frequency f t *v ce =5v,i e = -0.1a , f = 30mhz 80 mhz * characteristics of built-in transistor input voltage v product specification sales@twtysemi.com 1of 3 http://www.twtysemi.com 4008-318-123
smd type electrical characteristics curves equivalent circuit marking marking e02 DTDG23YP product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
smd type DTDG23YP product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
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