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| D965 transistor (npn) features power dissipation p cm: 0.75 w (tamb=25 ) collector current i cm: 5 a collector-base voltage v (br)cbo : 42 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic=1 m a, i e =0 42 v collector-emitter breakdown voltage v(br) ceo ic= 1ma, i b =0 22 v emitter-base breakdown voltage v(br) ebo i e = 10 a, i c =0 6 v collector cut-off current i cbo v cb = 30v, i e =0 0.1 a emitter cut-off current i ebo v eb = 6v, i c =0 0.1 a h fe(1) v ce = 2v, i c = 0.15 ma 150 h fe(2) v ce = 2v, i c = 500 ma 340 950 dc current gain h fe(3) v ce =2v, i c = 2000 ma 150 collector-emitter saturation voltage v ce (sat) i c =3000ma, i b =100 ma 0.35 v classification of h fe(2) rank r t range 340-600 560-950 1 2 3 to-92 1. emitter 2. collector 3. base D965 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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