1 power mosfet IRFB13N50A, sihfb13n50a features ? lower gate charge q g results in simpler drive reqirements ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche voltage ? lead (pb)-free available applications ? switch mode power supply (smps) ? uninterruptible power supplies ? high speed power switching notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. starting t j = 25 c, l = 5.7 mh, r g = 25 , i as =14 a, dv/dt = 7.6 v/ns (see fig. 12a). c. i sd 14 a, di/dt 250 a/s, v dd v ds , t j 150 c. d. 1.6 mm from case. product summary v ds (v) 500 r ds(on) ( )v gs = 10 v 0.450 q g (max.) (nc) 81 q gs (nc) 20 q gd (nc) 36 configuration single n -channel mosfet g d s to-220 g d s a v aila b le rohs* compliant ordering information package to-220 lead (pb)-free IRFB13N50Apbf sihfb13n50a-e3 snpb IRFB13N50A sihfb13n50a absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 500 v gate-source voltage v gs 30 continuous drain current v gs at 10 v t c = 25 c i d 14 a t c = 100 c 9.1 pulsed drain current a i dm 56 linear derating factor 2.0 w/c single pulse avalanche energy b e as 560 mj avalanche current a i ar 14 a repetitive avalanche energy a e ar 25 mj maximum power dissipation t c = 25 c p d 250 w peak diode recovery dv/dt c dv/dt 9.2 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m www.kersemi.com
2 IRFB13N50A, sihfb13n50a notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. c. c oss eff. is a fixed capacitance that gi ves the same charging time as c oss while v ds is rising from 0 to 80 % v ds . thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greasd surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -0.50 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 500 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma - 0.55 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 30 v - - 100 na zero gate voltage drain current i dss v ds = 500 v, v gs = 0 v - - 25 a v ds = 400 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 8.4 a b - - 0.450 forward transconductance g fs v ds = 50 v, i d = 8.4 a 8.1 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 1910 - pf output capacitance c oss - 290 - reverse transfer capacitance c rss -11- output capacitance c oss v gs = 0 v v ds = 1.0 v, f = 1.0 mhz - 2730 - v ds = 400 v, f = 1.0 mhz - 82 - effective output capacitance c oss eff. v ds = 0 v to 400 v c - 160 - total gate charge q g v gs = 10 v i d = 14 a, v ds = 400 v, see fig. 6 and 13 b -- 81 nc gate-source charge q gs -- 20 gate-drain charge q gd -- 36 turn-on delay time t d(on) v dd = 250 v, i d = 14 a, r g = 7.5 , see fig. 10 b -15- ns rise time t r -39- turn-off delay time t d(off) -39- fall time t f -31- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --14 a pulsed diode forward current a i sm --56 body diode voltage v sd t j = 25 c, i s = 14 a, v gs = 0 v b --1.5v body diode reverse recovery time t rr t j = 25 c, i f = 14 a, t j = 125 c, di/dt = 100 a/s b - 370 550 ns body diode reverse recovery charge q rr -4.46.5c body diode reverse recovery current i rrm -2131a forward turn-on time t on intrinsic turn-on time is neglig ible (turn-on is dominated by l s and l d ) s d g www.kersemi.com
3 IRFB13N50A, sihfb13n50a typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t j = 25 c v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 0.1 1 10 100 20s pulse width t j = 150 c top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 4.5v 0.1 1 10 100 4 6 8 10 12 14 16 v ds = 50 20s pulse width v gs , gate-to-source voltage (v) id, drain-to-source current (a) t j = 25 c t j = 150 c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j, junction temperature (c) r ds(on) , drain-to-source on resistance (normalized) v gs = 10v i d = 14a www.kersemi.com
4 IRFB13N50A, sihfb13n50a fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c, capacitance (pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 12 24 36 48 60 0 2 5 7 10 12 o g , total gate charge (nc) v gs , gate-to-source voltage (v) i d = 14a v ds = 100 v v ds = 250v v ds = 400v 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v sd , source-to-drain voltage (v) i sd , reverse drain current (a) v gs = 0 v t j = 25 c t j = 150 c 10 100 1000 10000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds(on) 100sec www.kersemi.com
5 IRFB13N50A, sihfb13n50a fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms 25 50 75 100 125 150 0 3 6 9 12 15 t c , case temperature (c) i d , drain current (a) p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 0.001 0.01 0.1 1 0.00001 0.001 0.001 0.01 0.1 1 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c p t t dm 1 2 t 1 , rectangular pulse duration (sec) thermal response (z thjc ) 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) a r g i as 0.01 t p d.u.t. l v ds + - v dd dri v er 15 v 20 v i as v ds t p www.kersemi.com
6 IRFB13N50A, sihfb13n50a fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit 25 50 75 100 125 150 0 230 460 690 920 1150 starting tj, junction temperature (c) e as , single pulse avalanche energy (mj) i d top bottom 6.3a 8.9a 14a q gs q gd q g v g charge v gs d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + - www.kersemi.com
7 IRFB13N50A, sihfb13n50a fig. 14 - for n-channel p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rrent d = p. w . period + - + + + - - - * v gs = 5 v for logic le v el de v ices peak diode recovery dv/dt test circuit v dd ? d v /dt controlled b y r g ? dri v er same type as d.u.t. ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t. circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer r g www.kersemi.com
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