KI4501ADY features trenchfet power mosfet absolute maximum ratings ta = 25 10 sec steady state 10 sec steady state drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j = 150 )* t a =25 8.8 6.3 -5.7 -4.1 a t a =70 7 5.2 -4.5 -3.3 a pulsed drain current i dm a continuous source current (diode conduction)* i s 1.8 1 -1.8 1 a maximum power dissipation* t a =25 2.5 1.3 2.5 1.3 w t a =70 1.60.841.60.84w operating junction and storage temperature range t j ,t stg *surface mounted on fr4 board;t 10 sec. 30 -30 -55to150 symbol parameter i d p d unit 30 20 -8 8 n-channel p-channel thermal resistance ratings t a =25 typ max typ max t 10 sec 40 50 42 50 steady state 75 95 76 95 maximum junction-to-foot steady state r thjc 18 23 21 26 *surface mounted on fr4 board. maximum junction-to-ambient* r thja /w n-channel p-channel symbol parameter unit smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit v ds =v gs ,i d =250 a n-ch 0.8 1.8 v ds =v gs ,i d =-250 a p-ch -0.45 1.0 v ds =0vv gs = 20 v n-ch 100 v ds =0vv gs = 8v p-ch 100 v ds =30v,v gs =0v n-ch 1 v ds =-8v,v gs =0v p-ch -1 v ds =30v,v gs =0v,t j =55 n-ch 5 v ds =-8v,v gs =0v,t j =55 p-ch -5 v ds =5 v, v gs = 10 v n-ch 30 v ds =-5 v, v gs =-4.5v p-ch -20 v gs =10v,i d = 8.8a n-ch 0.015 0.018 v gs =-4.5v,i d = -5.7a p-ch 0.030 0.042 v gs =4.5v,i d = 7.0a n-ch 0.022 0.027 v gs =-2.5v,i d = -4.8a p-ch 0.048 0.060 v ds =15v,i d =8.8a n-ch 18 v ds =-15v,i d = -5.7a p-ch 12 i s =1.8a,v gs = 0 v n-ch 0.73 1.1 i s = -1.8a, v gs =0v p-ch -0.75 -1.1 n-channel n-ch 11.5 20 v ds =15v,v gs =5v,i d = 8.8a p-ch 13.5 20 n-ch 3 p-channel p-ch 2.2 v ds =-4v,v gs =-5v,i d = -5.7a n-ch 4 p-ch 3 n channel n-ch 15 22 v dd =15v,r l =15 p-ch 21 40 i d =1a,v gen =10v,r g =6 n-ch 8 15 p-ch 45 70 p-channel n-ch 35 50 v dd =-4v,r l =4 p-ch 60 100 i d =-1a,v gen =-4.5v,r g =6 n-ch 10 20 p-ch 55 85 n-ch 30 60 p-ch 50 100 * pulse test; pulse width 300 s, duty cycle 2%. i f =1.8a,d i /d t =100a/ s rise time turn off delay time r ds(on) drain source on state resistance* diode forward voltage* total gate charge gate source charge gate drain charge v sd q gs q gd i d(on) g fs forward transconductance* i dss testconditons q g gate threshold voltage gate body leakage zero gate voltage drain current on state drain currenta v na a v gs( th) i gss a s v nc source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time KI4501ADY smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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