k i semiconductor applications t he H945 is designed for driver stage of af amplifier a nd low speed switching . absolute maximum ratings a =25 electrical characteristics a =25 symbol characteristics min typ max unit test cond itions bv cbo collector - base breakdown voltage 6 0 v i c =1 0 0 a, i e =0 bv ceo collector - emitter breakdown voltage 5 0 v i c = 10 0 a, i b =0 bv ebo emitter - base breakdown voltage 5 v i e =1 0 0 a i c =0 h fe dc current gain 90 6 0 0 v ce = 6 v, i c = 1 m a v ce(sat) collect or - emitter saturation voltage 0. 3 v i c = 100m a, i b = 10 ma v be(sat) base - emitter saturation voltage 1. 0 v i c =100ma, i b =10ma i cbo collector cut - off current 100 na v cb = 6 0v, i e =0 i ebo emitter cut - off current 100 na v eb = 5 v, i c =0 f t current gain - bandwi dth product 2 50 mhz v ce = 6 v, i c = 10 m a cob output capacitance 3.0 pf v cb =6v, i e =0 f=1 mhz nf noise figure 4.0 db v ce =6v,i c =0.5ma f= 1 khz rs=500 fe classification r q p k 9 0 18 0 135 2 7 0 2 0 0 40 0 30 0 6 0 0 t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation 2 5 0mw v cbo collector - base voltage 6 0v v ceo collector - emitter voltage 5 0 v v ebo emitter - base voltage 5 v i c collector current 150m a to - 92 c 945 pnp s i l i c o n t r a n s i s t o r 1 D emitter e 2 D base b 3 D collector c
k i semiconductor c 945 pnp s i l i c o n t r a n s i s t o r
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