ds30126 rev. 2p-5 1 of 1 dmbt9922 www.diodes.com diodes incorporated dmbt9922 pnp small signal surface mount transistor epitaxial planar die construction ideal for medium power amplification and switching high current gain complement to dmbt9022 characteristic symbol dmbt9922 unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5.0 v collector current - continuous (note 1) i c -100 ma power dissipation (note 1) p d 225 mw thermal resistance, junction to ambient (note 1) r ja 556 k/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a e j l m b c h g d k top view c e b mechanical data case: sot-23, molded plastic terminals: solderable per mil-std-202, method 208 terminal connections: see diagram marking: k2s weight: 0.008 grams (approx.) sot-23 dim min max a 0.37 0.51 b 1.19 1.40 c 2.10 2.50 d 0.89 1.05 e 0.45 0.61 g 1.78 2.05 h 2.65 3.05 j 0.013 0.15 k 0.89 1.10 l 0.45 0.61 m 0.076 0.178 all dimensions in mm notes: 1. valid provided that terminals are kept at ambient temperature. 2. pulse test: pulse width 300 s, duty cycle 2%. electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo -50 v -i c = 50 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -40 v -i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v -i e = 50 a, i c = 0 collector cutoff current i cbo -500 na v cb = -30v emitter cutoff current i ebo -500 na v eb = -4.0v on characteristics (note 2) dc current gain h fe 300 600 i c = -1.0ma, v ce = -6.0v collector-emitter saturation voltage v ce(sat) -0.5 v i c = -50ma, i b = -5.0ma small signal characteristics output capacitance c obo 2.0 typ. 3.5 pf v cb = -12v, f = 1.0mhz, i e = 0 current gain-bandwidth product f t 140 typ. mhz v ce = -12v, i c = -2.0ma, f = 100mhz t c u d o r p w e n
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