2SD1802 transistor (npn) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : 3 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 6 v collector cut-off current i cbo v cb = 40 v, i e =0 1 a emitter cut-off current i ebo v eb = 4 v, i c =0 1 a h fe(1) v ce = 2 v, i c = 100 ma 100 560 dc current gain h fe(2) v ce = 2 v, i c = 3 a 35 collector-emitter saturation voltage v ce(sat) i c = 2 a, i b = 100 ma 0.5 v base-emitter saturation voltage v be(sat) i c = 2 a, i b = 100 ma 1.2 v transition frequency f t v ce = 10 v, i c = 50 ma 150 mhz collector output capacitance c ob v cb = 10 v, i e =0,f= 1 mhz 25 pf turn-off time t on 70 fall time t f 650 storage time t s vcc=25v, ic=1a i b1 =-i b2 =0.1a 35 ns classification of h fe(1) rank r s t u range 100-200 140-280 200-400 280-560 marking to-251 to-252-2 1. base 2. collector 3. emitter 0. 51? 0. 10 0. 51? 0. 05 0? ?0. 10 1 . 6 0 ? 0 . 1 5 9 . 7 0 ? 0 . 2 0 0 . 7 5 ? 0 . 1 0 2. 30? 0. 10 6. 50? 0. 15 5. 30? 0. 10 0. 60? 0. 10 0. 80? 0. 10 2. 30? 0. 10 2 . 7 0 ? 0 . 2 0 2. 30? 0. 10 5 . 5 0 ? 0 . 1 0 1. 20 ?? 9? ? 0. 51 0 . 6 0? ? 5? ? 5? ? 5 ? ? 1. 20 0. 5 1? 0. 03 5? ? 1 4 . 7 0 2. 3 0? 0. 05 2. 3 0? 0. 0 5 0. 80? 0. 0 5 0. 6 0? 0. 0 5 5. 3 0? 0. 05 6. 5 0? 0. 10 0. 51 ? 0. 03 7 . 7 0 2 . 30? 0. 05 5 . 5 0 ? 0 . 1 0 5? ? 5 ? ? 1 2 3 2SD1802 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
2SD1802 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. wej electronic co.,ltd
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