smd type transistors features 2w power dissipation. 10a peak pulse current. excellent h fe characteristics up to 10 amps. extremely low saturation voltage e.g. 12mv typ. extremely low equivalent on-resistance. r ce(sat) 77m at 3a. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -12 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -5 v continuous collector current i cm -10 a peak pulse current i c -3 a base current i b -500 ma power dissipation p tot 1w operating and storage temperature range t j, t stg -55to+150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors FCX717 smd type transistors smd type transistors smd type transistors s m d ty p e i c t r a n s i s t o r s s m d ty p e smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors product specification 4008-318-123
smd type transistors FCX717 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a -12 -35 v collector-emitter breakdown voltage * v (br)ceo i c =-10ma -12 -25 v emitter-base breakdown voltage v (br)ebo i e =-100a -5 -8.5 v collector cut-off current i cbo v cb =-10v -100 na collector emitter cut-off current i ces v ce =-10v -100 na emitter cut-off current i ebo v eb =-4v -100 na collector-emitter saturation voltage * v ce( sat) i c =-0.1a, i b =-10ma i c =-1a, i b =-10ma i c =-3a, i b =-50ma -12 -110 -230 -20 -150 -320 mv base-emitter saturation voltage * v be( sat) i c =-3a, i b =-50ma -0.92 -1.05 v base-emitter on voltage * v be(on ) i c =-3a, v ce =-2v -0.85 -1.0 v static forward current transfer ratio * h fe i c =-10ma,v ce =-2v i c =-0.1a,v ce =-2v i c =-3a,v ce =-2v i c =-8a,v ce =-2v i c =-10a,v ce =-2v 300 300 160 60 45 475 450 240 100 70 transitional frequency f t i c =-50ma, v ce =-10v, f=100mhz 80 110 mhz output capacitance c obo v cb =-10v, f=1mhz 21 30 pf turn-on time t (on) i c =-2a, v cc =-6v 70 ns turn-off time t (off) i b1 =i b2 =50ma 130 ns * pulse test: tp = 300 s; d 0.02. marking marking 717 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors s m d ty p e i c t r a n s i s t o r s s m d ty p e smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors product specification 4008-318-123
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