document number: 88761 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-oct-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 miniature ultrafast plastic rectifier ug2a thru ug2d vishay general semiconductor features ? glass passivated chip junction ? ultrafast reverse recovery time ? soft recovery characteristics ? low forward voltage drop ? low switching losses, high efficiency ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. mechanical data case: do-204ac (do-15) molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 2.0 a v rrm 50 v to 200 v i fsm 80 a t rr 15 ns v f 0.95 v t j max. 150 c do-204ac (do-15) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ug2a ug2b ug2c ug2d unit maximum repetitive pe ak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current at 0.375" (9.5 mm) lead length at t l = 75 c (fig. 1) i f(av) 2.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 80 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88761 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-oct-09 ug2a thru ug2d vishay general semiconductor note (1) pulse test: 300 s pulse width, 1 % duty cycle note (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curves fig. 2 - maximum non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage i f = 2.0 a v f (1) 0.95 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 100 c 200 maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 15 ns typical reverse recovery time i f = 2.0 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c t rr 25 ns t j = 100 c 35 typical stored charge i f = 2.0 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c q rr 10 nc t j = 100 c 22 typical junction capacitance 4 v, 1 mhz c j 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ug2a ug2b ug2c ug2d unit typical thermal resistance r ja (1) 45 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ug2d-e3/54 0.404 54 4000 13" diameter paper tape and reel ug2d-e3/73 0.404 73 2000 ammo pack packaging temperature (c) average forward rectified current (a) 0 25 50 75 100 125 150 175 0 0.5 1.0 1.5 2.0 2.5 3.0 t a , ambient temperature p.c.b. mounted 0.47 " x 0.47 " (12 mm x 12 mm) copper pad s re s i s tive or inductive load 0.375 " (9.5 mm) lead length t l lead temperature number of cycle s at 60 hz peak forward s urge current (a) 1 10 100 1 10 100 t l = 75 c 8.3 m s s ingle half s ine-wave
document number: 88761 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-oct-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 ug2a thru ug2d vishay general semiconductor fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - reverse switching charateristics fig. 6 - typical j unction capacitance package outline dimensions in inches (millimeters) 0.01 0.1 1 10 100 in s tantaneou s forward volta g e (v) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 in s tantaneou s forward current (a) t j = 150 c t j = 125 c t j = 25 c t j = 100 c 0.1 1 10 100 1000 10 000 020406080100 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e leakage current (a) t j = 150 c t j = 125 c t j = 25 c t j = 100 c 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 junction temperature (c) recovered s tored charge/rever s e recovery time, nc/n s i f = 2.0 a v r = 30 v di/dt = 150 a/ s di/dt = 100 a/ s di/dt = 20 a/ s di/dt = 50 a/ s t rr q rr di/dt = 150 a/ s di/dt = 100 a/ s di/dt = 20 a/ s di/dt = 50 a/ s 0.1 1 10 100 1 10 100 rever s e voltage (v) junction capacit ance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p do-204ac (do-15) 0.034 (0.86) 0.028 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8) 1.0 (25.4) min.
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