2008. 8. 12 1/8 semiconductor technical data KMB6D0NP40QA n and p-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for back-light inverter. features n-channel : v dss =40v, i d =6a. : r ds(on) =31m (max.) @ v gs =10v : r ds(on) =45m (max.) @ v gs =4.5v p-channel : v dss =-40v, i d =-5a. : r ds(on) =45m (max.) @ v gs =-10v : r ds(on) =63m (max.) @ v gs =-4.5v super high dense cell design. maximum rating (ta=25 ) 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 1 2 3 4 8 7 6 5 * : surface mounted on fr4 board. flp-8 0.20+0.1/-0.05 p t 1.27 millimeters 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 b2 g h l d a b1 dim 6.02 0.3 1.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ g h b1 b2 1 4 5 8 a p d l t characteristic symbol n-ch p-ch unit drain-source voltage v dss 40 -40 v gate-source voltage v gss 20 20 v drain current dc i d * 6 -5 a pulsed i dp * 20 -20 source-drain diode current i s * 3.0 -3.2 a drain power dissipation t a =25 p d * 2 2 w t a =70 1.3 1.3 maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to ambient r thja * 62.5 /w pin connection (top view) marking kmb6d0np 40qa lot no. type name
2008. 8. 12 2/8 KMB6D0NP40QA revision no : 0 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v n-ch 40 - - v i d =-250 a, v gs =0v p-ch -40 - - drain cut-off current i dss v ds =32v, v gs =0v n-ch - - 1 a v ds =-32v, v gs =0v p-ch - - -1 gate leakage current i gss v gs = 20v, v ds =0v n-ch - - 100 na p-ch - - 100 gate threshold voltage v th v ds =v gs, i d =250 a n-ch 1.0 2.3 3.0 v v ds =v gs, i d =-250 a p-ch -1.0 -2.0 -3.0 drain-source on resistance r ds(on) * v gs =10v, i d =6a n-ch - 19.6 31.0 m v gs =-10v, i d =-5a p-ch - 31.2 45.0 v gs =4.5v, i d =5a n-ch - 39.9 45.0 v gs =-4.5v, i d =-2a p-ch - 47.6 63.0 forward transconductance g fs * v ds =5v, i d =6a n-ch - 2.2 - s v ds =-5v, i d =-4a p-ch - 9.5 - dynamic input capacitance c iss n-ch : v ds =20v, v gs =0v, f=1mhz p-ch : v ds =-20v, v gs =0v, f=1mhz n-ch - 420 - pf p-ch - 850 - output capacitance c oss n-ch - 160 - p-ch - 220 - reverse transfer capacitance c rss n-ch - 40 - p-ch - 82 - total gate charge q g * n-ch : v ds =20v, i d =6a, v gs =10v p-ch : v ds =-20v, i d =-5a, v gs =-10v n-ch - 12.0 - nc p-ch - 15.0 - gate-source charge q gs * n-ch : v ds =20v, i d =6a, v gs =10v p-ch : v ds =-20v, i d =-5a, v gs =-4.5v n-ch - 1.6 - p-ch - 2.0 - gate-drain charge q gd * n-ch - 2.6 - p-ch - 6.5 - turn-on delay time t d(on) * n-ch : v dd =20v, i d =6a, v gs =10v, r g =3 p-ch : v dd =-20v, v gs =-10v, r g =3 , i d =-5a n-ch - 9.0 - ns p-ch - 17.0 - turn-on rise time t r * n-ch - 8.9 - p-ch - 13.2 - turn-off delay time t d(off) * n-ch - 23.6 - p-ch - 38.0 - turn-off fall time t f * n-ch - 3.4 - p-ch - 15.0 - source-drain diode ratings source-drain diode forward voltage v sdf * i s =1.0a, v gs =0v n-ch - 0.71 1.2 v i s =-1.0a, v gs =0v p-ch - -0.71 -1.2 note>* pulse test : pulse width <300 , duty cycle < 2%
2008. 8. 12 3/8 KMB6D0NP40QA revision no : 0
2008. 8. 12 4/8 KMB6D0NP40QA revision no : 0
2008. 8. 12 5/8 KMB6D0NP40QA revision no : 0 fig11. gate charge circuit and wave form v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig12. resistive load switching v ds v gs v ds v gs 2.0 ma schottky diode 10 v 3 ? r l 0.5 v dss 0.5 v dss
2008. 8. 12 6/8 KMB6D0NP40QA revision no : 0
2008. 8. 12 7/8 KMB6D0NP40QA revision no : 0
2008. 8. 12 8/8 KMB6D0NP40QA revision no : 0 v gs - 4.5 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off fig. 11 gate charge i d i d fig. 12 resistive load switching v gs v ds v gs 2.0 ma schottky diode - 10 v 3 ? r l 0.5 v dss 0.5 v dss v ds
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