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www.irf.com 1 7/10/09 IRF8910GPBF hexfet power mosfet notes through are on page 10 so-8 benefits very low r ds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current 20v v gs max. gate rating d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 applications dual so-8 mosfet for pol converters in desktop, servers, graphics cards, game consoles and set-top box lead-free halogen-free v dss r ds(on) max i d 20v 13.4m @v gs = 10v 10a absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 42 c/w r ja junction-to-ambient ??? 62.5 max. 10 8.3 82 20 20 -55 to + 150 2.0 0.016 1.3

2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.015 ??? v/c r ds(on) static drain-to-source on-resistance ??? 10.7 13.4 m ? ??? 14.6 18.3 v gs(th) gate threshold voltage 1.65 ??? 2.55 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -4.8 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 24 ??? ??? s q g total gate charge ??? 7.4 11 q gs1 pre-vth gate-to-source charge ??? 2.4 ??? q gs2 post-vth gate-to-source charge ??? 0.80 ??? nc q gd gate-to-drain charge ??? 2.5 ??? q godr gate charge overdrive ??? 1.7 ??? see fig. 6 q sw switch char g e (q gs2 + q gd ) ??? 3.3 ??? q oss output charge ??? 4.4 ??? nc t d(on) turn-on delay time ??? 6.2 ??? t r rise time ???10??? ns t d(off) turn-off delay time ??? 9.7 ??? t f fall time ??? 4.1 ??? c iss input capacitance ??? 960 ??? c oss output capacitance ??? 300 ??? pf c rss reverse transfer capacitance ??? 160 ??? avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. t y p. max. units i s continuous source current ??? ??? 2.5 (body diode) a i sm pulsed source current ??? ??? 82 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 17 26 ns q rr reverse recovery charge ??? 6.5 9.7 nc ??? i d = 8.2a v gs = 0v v ds = 10v v gs = 4.5v, i d = 8.0a v gs = 4.5v typ. ??? v ds = v gs , i d = 250a clamped inductive load v ds = 10v, i d = 8.2a v ds = 16v, v gs = 0v, t j = 125c t j = 25c, i f = 8.2a, v dd = 10v di/dt = 100a/ s t j = 25c, i s = 8.2a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 10v, v gs = 0v v dd = 10v, v gs = 4.5v i d = 8.2a v ds = 10v v gs = 20v v gs = -20v v ds = 16v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 10a conditions max. 19 8.2 ? = 1.0mhz

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 8.0v 5.5v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 8.0v 5.5v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 10a v gs = 10v

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 012345678910 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v i d = 8.2a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.01 0.10 1.00 10.00 100.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t a = 25c tj = 150c single pulse

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 6 7 8 9 10 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri 4 4 r 4 r 4 c c 5 5 r 5 r 5 ri (c/w) i (sec) 1.2647 0.000091 2.0415 0.000776 18.970 0.188739 23.415 0.757700 16.803 25.10000 -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a

6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 16. switching time test circuit fig 17. switching time waveforms fig 12. on-resistance vs. gate voltage d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15. gate charge test circuit fig 14. unclamped inductive test circuit and waveform t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v vgs v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - v gs v ds 90% 10% t d(on) t d(off) t r t f 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.4a 4.9a bottom 8.2a 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0.00 10.00 20.00 30.00 40.00 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 10a t j = 125c t j = 25c

www.irf.com 7 fig 15.

for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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8 www.irf.com control fet

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#' p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) () + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f ? ? ? ? ? ? + q g v g f () + q oss 2 v in f ? ? ? ? " (

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synchronous fet the power loss equation for q2 is approximated by; p loss = p conduction + p drive + p output * p loss = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets? susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca- pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. power mosfet selection for non-isolated dc/dc converters figure a: q oss characteristic

www.irf.com 9 so-8 package outline (mosfet & fetky)

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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.57mh, r g = 25 ? , i as = 8.2a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2009 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in milimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package

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