tsm7900d 20v dual n - channel m osfet w/esd protected 1 / 6 version: b 07 tdfn 3x3 features advance trench process technology high density cell design for ultra low on - resistance esd protect 2kv application specially designed for li - on battery packs battery switch application ordering information part no. p ackage packing tsm7900dcq rf t dfn 3x3 3kpcs / 7 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v gs 12 v continuous drain current, v gs @4.5v. i d 6 a pulsed drain cu rrent, v gs @4.5v i dm 30 a continuous source current (diode conduction) a,b i s 1.4 a ta = 25 o c 1.25 maximum power dissipation ta = 75 o c p d 0.8 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to foot (drain) thermal resistance r? jf 30 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 50 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. product summary v ds (v) r ds(on) (m) i d (a) 32 @ v gs = 4.5v 6.5 20 40 @ v gs = 2.5v 5.0 block diagram dual n - channel mosfet pin definition : 1. source 1 2. gate 1 3. source 2 4. gate 2 5, 6, 7, 8. drain
tsm7900d 20v dual n - channel m osfet w/esd protected 2 / 6 version: b 07 electrical specifications parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 0.6 0.8 1.0 v gate body leakage v gs = 12v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 16 v, v gs = 0v i dss -- -- 1.0 ua on - state drain current v ds = 5v, v gs = 4.5v i d(on) 30 -- -- a v gs = 4.5v, i d = 6.0a -- 30 35 drain - source on - state resistance v gs = 2.5v, i d = 5.0a r ds(on) -- 35 40 m forward transconductance v ds = 10v, i d = 6.0a g fs -- 30 -- s diode forward voltage i s = 1.5a, v gs = 0v v sd - - 0.6 1.2 v dynamic b total gate charge q g -- 15 20 gate - source charge q gs -- 3.4 -- gate - drain charge v ds = 10v, i d = 6a, v gs = 4.5v q gd -- 1.2 -- nc input capacitance c iss -- 950 -- output capacitance c os s -- 450 -- reverse transfer capacitance v ds = 10v, v gs = 0v, f = 1.0mhz c rss -- 125 -- pf switching c turn - on delay time t d(on) -- 140 200 turn - on rise time t r -- 210 250 turn - off delay time t d(off) -- 3700 4800 turn - off fall time v dd = 10v, r l = 10 , i d = 1a, v gen = 4.5v, r g = 6 t f -- 2000 2600 ns notes: a. pulse test: pw 300 s, du ty cycle 2% b. for design aid only, not subje ct to production testing. b. switching time is essentially independent of operating temperature.
tsm7900d 20v dual n - channel m osfet w/esd protected 3 / 6 version: b 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm7900d 20v dual n - channel m osfet w/esd protected 4 / 6 version: b 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single puls e power normalized thermal transient impedance, junction - to - ambient
tsm7900d 20v dual n - channel m osfet w/esd protected 5 / 6 version: b 07 tdfn mechanical drawing tdfn 3x3 dimension millimeters dim min. typ. max. a 1.750 1.800 1.850 b 0.470 0.520 0.570 c 0.270 0.320 0.370 d 2.950 3.000 3.050 e 2.950 3.000 3.050 f 2.250 2.300 2.350 g 0.177 0.203 0.280 h 0.610 0.660 0.710 i 0.005 0.020 0.050 j 0.650 0.750 0.850
tsm7900d 20v dual n - channel m osfet w/esd protected 6 / 6 version: b 07 notice specifications of the products displayed herein are subject to change without notice. tsc or any one on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by thi s document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relati ng to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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