document number: 93237 for technical questions within your region, please contact one of the following: www.vishay.com revision: 05-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 15 a fred pt ? VS-15EWH06FN-M3 vishay semiconductors new product features ? hyperfast recovery time, reduced q rr and soft recovery ? 175 c maximum operating junction temperature ? for pfc crm/ccm operation ? low forward voltage drop ? low leakage current ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition description/applications state of the art hyperfast reco very rectifiers designed with optimized performance of forw ard voltage drop, hyperfast recovery time, and soft recovery. the planar structure and th e platinum doped life time control guarantee the best ov erall performance, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac/dc section of smps inverters or as freewheeling diodes. their extremely optimized stored charge and low recovery current minimize the sw itching losses and reduce over dissipation in the swit ching element and snubbers. product summary package d-pak (to-252aa) i f(av) 15 a v r 600 v v f at i f 2.1 v t rr (typ.) 22 ns t j max. 175 c diode variation single die 2, 4 3 anode 1 n/c d-pak (to-252aa) absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 130 c 15 a non-repetitive peak surge current i fsm t j = 25 c 120 peak repetitive forward current i fm t c = 130 c, f = 20 khz, d = 50 % 30 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 15 a - 1.6 2.1 i f = 15 a, t j = 150 c - 1.2 1.6 reverse leakage current i r v r = v r rated - - 50 a t j = 150 c, v r = v r rated - - 500 junction capacitance c t v r = 600 v - 12 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93237 2 diodesamericas@vishay.com , diodesasia@vishay.com , revision: 05-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VS-15EWH06FN-M3 vishay semiconductors hyperfast rectifier, 15 a fred pt ? new product dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 22 30 ns t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 390 v -36- t j = 125 c - 75 - peak recovery current i rrm t j = 25 c - 4.8 - a t j = 125 c - 7.2 - reverse recovery charge q rr t j = 25 c - 90 - nc t j = 125 c - 300 - thermal - mechanical specifications parameter symbol test conditio ns min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc -1.41.8 c/w thermal resistance, junction to am bient per leg r thja --70 approximate weight 0.3 g 0.01 oz. marking device case styl e d-pak (to-252aa) 15ewh06fn
document number: 93237 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 05-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VS-15EWH06FN-M3 hyperfast rectifier, 15 a fred pt ? vishay semiconductors new product fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forward current (a) v f - forward voltage drop (v) 0.2 0.7 1.2 1.7 2.2 2.7 0.1 1 10 100 93237_01 t j = 125 c t j = 25 c t j = 175 c i r - reverse current (a) v r - reverse voltage (v) 0 100 200 300 500 400 600 0.001 0.01 0.1 1 10 100 1000 93237_02 t j = 125 c t j = 175 c t j = 150 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 0 100 200 400 500 300 600 1 100 10 93237_03 0.01 0.1 1 10 0.00001 93237_04 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 s ingle pul s e (thermal re s i s tance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93237 4 diodesamericas@vishay.com , diodesasia@vishay.com , revision: 05-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VS-15EWH06FN-M3 vishay semiconductors hyperfast rectifier, 15 a fred pt ? new product fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r allowable case temperature (c) i f(av) - average forward current (a) 20 15 10 5 25 0 150 170 180 110 130 140 160 120 93237_05 sq uare wave (d = 0.50) rated v r applied s ee note (1) dc average power loss (w) i f(av) - average forward current (a) 20 15 10 5 25 0 93237_06 25 35 0 10 15 30 20 5 rm s limit d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc t rr (ns) di f /dt (a/s) 100 93237_07 1000 0 100 30 50 70 80 90 20 10 40 60 i f = 15 a, t j = 25 c i f = 15 a, t j = 125 c q rr (nc) di f /dt (a/s) 100 93237_08 1000 0 600 300 400 500 100 200 i f = 15 a, t j = 25 c i f = 15 a, t j = 125 c
document number: 93237 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 05-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VS-15EWH06FN-M3 hyperfast rectifier, 15 a fred pt ? vishay semiconductors new product fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93237 6 diodesamericas@vishay.com , diodesasia@vishay.com , revision: 05-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VS-15EWH06FN-M3 vishay semiconductors hyperfast rectifier, 15 a fred pt ? new product ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-15EWH06FN-M3 75 3000 ant istatic plastic tube vs-15ewh06fntr-m3 2000 200 0 13" diameter reel vs-15ewh06fntrl-m3 3000 300 0 13" diameter reel vs-15ewh06fntrr-m3 3000 300 0 13" diameter reel links to related documents dimensions www.vishay.com/doc?95016 part marking information www.vishay.com/doc?95176 packaging information www.vishay.com/doc?95033 spice model www.vishay.com/doc?95385 2 - current rating (15 = 15 a) 4 - package identifier: w = d-pak e = single diode 5 - h = hyperfast recovery 6 - voltage rating (06 = 600 v) 7 - fn = to-252aa 8 - tr = tape and reel none = tube trl = tape and reel (left oriented) trr = tape and reel (right oriented) 3 - circuit configuration: 1 - vishay semiconductors product - environmental digit: -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 9 device code 5 1 3 2 4 6 7 8 9 vs- 15 e w h 06 fn trl -m3
document number: 95016 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 04-nov-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 d-pak (to-252aa) outline dimensions vishay high power products notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) lead dimension uncontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a mi nimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not include mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 applied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa dimensions in millimeters and inches symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b 3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b 2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? ga u ge plane lead tip m 0.010 cab m 32 4 1 e1 d1 mi n . 0.265 (6.74) mi n . 0.245 (6.23) mi n . 0.0 8 9 (2.2 8 ) mi n . 0.06 (1.524) 0.4 88 (12.40) 0.409 (10.40) 0.093 (2.3 8 ) 0.0 8 5 (2.1 8 ) pad layout
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
