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| inchange semiconductor isc product specification isc silicon npn power transistor BUV89 description collector-emitter sustaining voltage- : v ceo(sus) = 800v(min) high switching speed applications designed for use in ac motor c ontrol systems from three- phase mains. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage v be =0 1200 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 5 v i c collector current-continuous 8 a i cm collector current-peak 15 a i b b base current-continuous 4 a i bm base current-peak 6 a p c collector power dissipation @ t c =25 125 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.0 /w isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon npn power transistor BUV89 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a ;i b = 0; l=25 mh b 800 v v ce (sat)-1 collector-emitter saturation voltage i c = 4.5a; i b = 2a 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 6a; i b = 3a b 1.0 v v be (sat) base-emitter saturation voltage i c = 4.5a; i b = 2a 1.3 v i ces collector cutoff current v ce = v cesmax ;v be = 0 v ce = v cesmax ;v be = 0; t j = 125 1 2 ma i ebo emitter cutoff current v eb = 5v; i c =0 10 ma h fe dc current gain i c = 1a; v ce = 5v 8 c ob output capacitance i e = 0; v cb = 10v;f test = 1mhz 125 pf f t current-gain?bandwidth product i c = 0.1a ; v ce = 5v;f test = 5mhz 7 mhz switching times; resistive load t on turn-on time 0.2 s t s storage time 3.5 s t f fall time i c = 4.5a; i b1 = -i b2 = 2a 0.5 s isc website www.iscsemi.cn 2 www.datasheet.co.kr datasheet pdf - http://www..net/ |
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