preliminary notice: this is not a final specification. some parametric limits are subject to change. sep.1998 FY7BCH-02A outline drawing dimensions in mm mitsubishi nch power mosfet FY7BCH-02A high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. 20 10 7 49 7 1.5 6.0 1.6 C55 ~ +150 C55 ~ +150 0.035 v gs = 0v v ds = 0v l = 10 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25c) parameter conditions ratings unit l 2.5v drive l v dss .................................................................................. 20v l r ds (on) (max) ............................................................. 25m w l i d ........................................................................................... 7a tssop8 3.0 0.275 0.65 1.1 6.4 4.4 ? a?? ?? drain source gate ?? ? ? a ? ? ? ?
preliminary notice: this is not a final specification. some parametric limits are subject to change. sep.1998 mitsubishi nch power mosfet FY7BCH-02A high-speed switching use electrical characteristics (tch = 25c) symbol v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) t rr v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 20 0.4 0.9 20 26 0.140 16 1150 380 300 20 80 140 135 0.75 50 0.1 0.1 1.3 25 37 0.182 1.1 78.1 drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v v gs = 10v, v ds = 0v v ds = 20v, v gs = 0v i d = 1ma, v ds = 10v i d = 7a, v gs = 4v i d = 3.5a, v gs = 2.5v i d = 7a, v gs = 4v i d = 7a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 10v, i d = 3.5a, v gs = 4v, r gen = r gs = 50 w i s = 1.5a, v gs = 0v channel to ambient i s = 1.5a, dis/dt = C50a/ m s
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