QH08TZ600 qspeed ? family 600 v, 8 a h-series pfc diode www.powerint.com january 2011 product summary i f(avg) 8 a v rrm 600 v q rr (typ at 125 c) 25.5 nc i rrm (typ at 125 c) 1.9 a softness t b /t a (typ at 125 c) 0.75 ac to-220ac rohs compliant package uses lead-free plating and green mold compound. halogen free per iec 61249-2-21. general description this device has the lowest q rr of any 600v silicon diode. its reco very characteristics increase efficiency, reduce emi and eliminate snubbers. applications ? power factor correction (pfc) boost diode ? motor drive circuits ? dc-ac inverters features ? low q rr , low i rrm , low t rr ? high di f /dt capable (1000a/s) ? soft recovery benefits ? increases efficiency ? eliminates need for snubber circuits ? reduces emi filter component size & count ? enables extremely fast switching absolute maximum ratings absolute maximum ratings are the values beyond which the device may be damaged or have its usef ul life impaired. functional ope ration under these conditions is not implied. symbol parameter conditions rating units v rrm peak repetitive reverse voltage 600 v i f(avg) average forward current t j = 150 c, t c = 95c 8 a i fsm non-repetitive peak surge current 60 hz, ? cycle 80 a i fsm non-repetitive peak surge current ? cycle of t=28 s sinusoid, t c =25 c 350 a t j(max) maximum junction temperature 150 c t stg storage temperature ?55 to 150 c lead soldering temperature leads at 1.6 mm from case, 10 sec 300 c v isol isolation voltage (leads-to-tab) ac 2500 v p d power dissipation t c = 25 c 44.6 w thermal resistance symbol resistance from: conditions rating units r ja junction to ambient to-220 62 c/w r jc junction to case to-220 2.8 c/w pin assignment nc c a
www.powerint.com rev 1.1 01/11 QH08TZ600 2 electrical specifications at t j = 25 c (unless otherwise specified) symbol parameter conditions min typ max units dc characteristics i r reverse current v r = 600 v, t j = 25 c - - 250 a v r = 600 v, t j = 125 c - 0.5 - ma v f forward voltage i f = 8 a, t j = 25 c - 2.6 3.15 v i f = 8 a, t j = 150 c - 2.23 - v c j junction capacitance v r = 10 v, 1 mhz - 25 - pf dynamic characteristics t rr t j =25 c - 11.1 - ns reverse recovery time di/dt =200 a/ s v r =400 v, i f =8 a t j =125 c - 19.5 - ns q rr t j =25 c - 8.0 13.5 nc reverse recovery charge di/dt =200 a/ s v r =400 v, i f =8 a t j =125 c - 25.5 - nc i rrm t j =25 c - 1.14 1.7 a maximum reverse recovery current di/dt =200 a/ s v r =400 v, i f =8 a t j =125 c - 1.9 - a s t j =25 c - 0.7 - softness factor = a b t t di/dt =200 a/ s v r =400 v, i f =8 a t j =125 c - 0.75 - note to component engineers : h-series diodes employ schottky technologies in their design and construction. therefore, component engineers should plan their test setups to be similar to t hose for traditional schottky test setups. (for additional details, see application note an-300.) figure 1. reverse recovery definitions figure 2. reverse recovery test circuit pulse generator rg q1 vr + 15v d1 dut l1 i f di f /dt i rrm t rr t b t a 0 0.1xi rrm
rev 1.1 01/11 www.powerint.com QH08TZ600 3 electrical specifications at t j = 25 c (unless otherwise specified) 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v f (v) i f (a) tj=125c tj=25c figure 3. typical i f vs v f 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 160 180 v r (v) c j (pf) figure 4. typical c j vs v r 0 10 20 30 40 50 60 70 80 0 2 4 6 8 1012141618 i f (a) q rr (nc) di f /dt=200a/us di f /dt=500a/us di f /dt=1000a/us figure 5. typical q rr vs i f at t j = 125 c 0 5 10 15 20 25 30 024681012141618 i f (a) t rr (ns) di f /dt=200a/us di f /dt=500a/us di f /dt=1000a/us figure 6. typical t rr vs i f at t j = 125 c 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 case temperature, t c ( o c) i f(av) (a) figure 7. dc current derating curve 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 case temperature, t c ( o c) p (w) figure 8. power derating curve
www.powerint.com rev 1.1 01/11 QH08TZ600 4 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 t c (c) i f (peak) (a) duty cycle=10% duty cycle=50% duty cycle=30% dc figure 9. i f (peak) vs t c , f=70 khz QH08TZ600 0.0001 0.001 0.01 0.1 1 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 t1(sec) zth(j-c)/rth(j-c ) d=0.002 d=0.005 d= 0.01 d= 0.02 d= 0.05 d= 0.1 d = 0.3 d= 0.5 single pulse figure 10. normalized maximum transient thermal impedance
rev 1.1 01/11 www.powerint.com QH08TZ600 5 dimensional outline drawings millimeters dim min max a 4.32 4.70 a1 1.14 1.40 a2 2.03 2.79 c 0.34 0.610 d 9.65 10.67 e 2.49 2.59 e1 4.98 5.18 f 0.508 1.016 f1 1.14 1.78 h 14.71 16.51 h1 5.84 6.795 h2 8.40 9.00 h3 3.53 3.96 h4 2.54 3.05 l 12.70 14.22 l1 - 6.35 mechanical mounting method maximum torque / pressure specification screw through hole in package tab 1 newton meter (nm) or 8.8 inch-pounds (lb-in) clamp against package body 12.3 kilogra m-force per square centimeter (kgf/cm 2 ) or 175 lbf/in 2 soldering time and temperature: this product has been designed for use with high- temperature, lead-free solder. the compone nt leads can be subjected to a maximum temperature of 300 c, for up to 10 seconds. see application note an-303, for more details. ordering information part number package packing QH08TZ600 to-220ac 50 units/tube the information contained in this document is subject to change without notice.
www.powerint.com rev 1.1 01/11 QH08TZ600 6 revision notes date 1.0 released by qspeed 01/10 1.1 converted to power in tegrations document 01/11
rev 1.1 01/11 www.powerint.com QH08TZ600 7 for the latest updates, visit our website: www.powerint.com power integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. power integrations does not assume any liability arising from the use of any device or circuit described herein. power integrations makes no warranty herein and specifically disclaims all warranties including, without limitation, the implied warranties of merchantability, fitness for a particular purpose, and non-infringement of third party rights. patent information the products and applications illustrated herein (including transfo rmer construction and circuits external to the products) may be covered by one or more u.s. and foreign patents, or potentially by pending u.s. and foreign patent applications assigned to power integrations. a complete list of power integrations? patents may be found at www.powerint.com . power integrations grants its customers a licen se under certain patent rights as set fo rth at http://www.powerint.com/ip.htm. the pi logo, topswitch, tinyswitch, linkswitch, dpa-switch, peakswit ch, capzero, senzero, linkzero, hiperpfs, hipertfs, qspeed, ecosmart, clampless, e-shield, filterfuse, stackfet, pi expert and pi facts are trademarks of power integrations, inc. other trademarks are property of their respective companies. ?copyright 2011 power integrations, inc. power integrations worldwide sales support locations world headquarters 5245 hellyer avenue san jose, ca 95138, usa. main: +1-408-414-9200 customer service: phone: +1-408-414-9665 fax: +1-408-414-9765 e-mail: usasales@powerint.com germany rueckertstrasse 3 d-80336, munich germany phone: +49-89-5527-3911 fax: +49-89-5527-3920 e-mail: eurosales@powerint.com japan kosei dai-3 building 2-12-11, shin-yokohama, kohoku-ku, yokohama-shi, kanagawa 222-0033 japan phone: +81-45-471-1021 fax: +81-45-471-3717 e-mail: japansales@powerint.com taiwan 5f, no. 318, nei hu rd., sec. 1 nei hu district taipei 114, taiwan r.o.c. phone: +886-2-2659-4570 fax: +886-2-2659-4550 e-mail: taiwansales@powerint.com china (shanghai) rm 1601/1610, tower 1 kerry everbright city no. 218 tianmu road west shanghai, p.r.c. 200070 phone: +86-021-6354-6323 fax: +86-021-6354-6325 e-mail : chinasales@powerint.com india #1, 14 th main road vasanthanagar bangalore-560052 india phone: +91-80-4113-8020 fax: +91-80-4113-8023 e-mail: indiasales@powerint.com korea rm 602, 6fl korea city air terminal b/d, 159-6 samsung-dong, kangnam-gu, seoul, 135-728 korea phone: +82-2-2016-6610 fax: +82-2-2016-6630 e-mail: koreasales@powerint.com europe hq 1st floor, st. james?s house east street, farnham surrey gu9 7tj united kingdom phone: +44 (0) 1252-730-141 fax: +44 (0) 1252-727-689 e-mail: eurosales@powerint.com china (shenzhen) rm a, b & c 4 th floor, block c, electronics science and technology building 2070 shennan zhong road shenzhen, guangdong, p.r.c. 518031 phone: +86-755-8379-3243 fax: +86-755-8379-5828 e-mail: chinasales@powerint.com italy via de amicis 2 20091 bresso mi italy phone: +39-028-928-6000 fax: +39-028-928-6009 e-mail: eurosales@powerint.com singapore 51 newton road, #19-01/05 goldhill plaza singapore, 308900 phone: +65-6358-2160 fax: +65-6358-2015 e-mail: singaporesales@powerint.com applications hotline world wide +1-408-414-9660 applications fax world wide +1-408-414-9760
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