AO3413 20v p-channel mosfet -15 features v ds = -20v i d = -3a (v gs = -4.5v) r ds(on) < 80m w (v gs =- 4.5v) r ds(on) < 100m w (v gs = -2.5v) r ds(on) < 130m w (v gs = -1.8v) general description the AO3413 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in p wm applications. sot23 top view bottom view d g s g s d g ds symbol v ds v gs i dm t j , t stg symbol typ max t 10s 70 90 steady-state 100 125 steady-state r q jl 63 80 -15 a p d power dissipation a t a =25c t a =25c t a =70c i d pulsed drain current b maximum parameter units -20 8 c -55 to 150 continuous drain current a -3 -2.4 maximum junction-to-lead c c/w units maximum junction-to-ambient a r q ja absolute maximum ratings t a =25c unless otherwise noted vv gate-source voltage drain-source voltage parameter c/w maximum junction-to-ambient a 0.9 c/w w junction and storage temperature range t a =70c thermal characteristics 1.4 features v ds = -20v i d = -3a (v gs = -4.5v) r ds(on) < 80m w (v gs =- 4.5v) r ds(on) < 100m w (v gs = -2.5v) r ds(on) < 130m w (v gs = -1.8v) general description the AO3413 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in p wm applications. sot23 top view bottom view d g s g s d g ds rev 9: july 2010 www.aosmd.com page 1 of 5
AO3413 symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.4 -0.65 -1 v i d(on) -15 a 56 80 t j =125c 80 115 70 100 m w 85 130 m w g fs 12 s v sd -0.7 -1 v i s -1.4 a c iss 560 745 pf c oss 80 pf c rss 70 pf r g 15 23 w q g 8.5 11 nc q gs 1.2 nc q gd 2.1 nc t d(on) 7.2 ns t r 36 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-10v, f=1mhz gate drain charge turn-on rise time v gs =-4.5v, v ds =-10v, r l =3.3 w , gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-3a gate source charge m w v gs =-2.5v, i d =-2.6a i s =-1a,v gs =0v v ds =-5v, i d =-3a v gs =-1.8v, i d =-1a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage gate threshold voltage v ds =v gs i d =-250 m a v ds =-20v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-3a reverse transfer capacitance rev 9: july 2010 www.aosmd.com page 2 of 5 t r 36 ns t d(off) 53 ns t f 56 ns t rr 37 49 ns q rr 27 nc 12 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =3.3 w , r gen =6 w turn-off fall time body diode reverse recovery time body diode reverse recovery charge i f =-3a, di/dt=100a/ m s i f =-3a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 300 m s pulse width, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev 9: july 2010 www.aosmd.com page 2 of 5
AO3413 typical electrical and thermal characteristics -15 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) figure 1: on-region characteristics v gs =-1.5v -2.0v - 2.5v -4.5v - 3.0v 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =-5v 50 70 90 110 130 150 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs =-1.8v v gs =-2.5v v gs =-4.5v 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance v gs =-2.5v i d =-2.6a v gs =-4.5v i d =-3a v gs =-1.8v i d =-1a rev 9: july 2010 www.aosmd.com page 3 of 5 12 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) figure 1: on-region characteristics v gs =-1.5v -2.0v - 2.5v -4.5v - 3.0v 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =-5v 50 70 90 110 130 150 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =-1.8v v gs =-2.5v v gs =-4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =-2.5v i d =-2.6a v gs =-4.5v i d =-3a v gs =-1.8v i d =-1a 40 60 80 100 120 140 160 180 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-3a 25 c 125 c rev 9: july 2010 www.aosmd.com page 3 of 5
AO3413 typical electrical and thermal characteristics -15 0 1 2 3 4 5 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) v ds =-10v i d =-3a t j(max) =150 c t a =25 c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -i d (amps) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 1s rev 9: july 2010 www.aosmd.com page 4 of 5 12 0 1 2 3 4 5 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note e) v ds =-10v i d =-3a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =125 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 1s rev 9: july 2010 www.aosmd.com page 4 of 5
AO3413 vd c ig v ds d u t v dc v gs v gs q g qgs qgd c harge g ate c harge test c ircuit & w aveform - + - + -10v dut vgs diode recovery test circuit & waveforms vds + rr q = - idt vdc d ut vdd vgs vds vgs rl rg resistive switching test circuit & w aveform s - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 9: july 2010 www.aosmd.com page 5 of 5 vd c ig vds d u t v dc vgs vgs q g qgs qgd c harge g ate c harge test c ircuit & w aveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc d ut vdd vgs vds vgs rl rg resistive switching test circuit & w aveform s - + vgs vds t t t t t t 90% 10% r on d (o ff) f off d(on ) rev 9: july 2010 www.aosmd.com page 5 of 5
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