AO4202 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 19a r ds(on) (at v gs =10v) < 5.3m w r ds(on) (at v gs = 4.5v) < 7m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl 2 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics units parameter typ max c/w r q ja 31 59 40 v 20 gate-source voltage drain-source voltage 30 the AO4202 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance. power losses are minimized due to an extremely low combination of r ds(on) and c rss . in addition, switching behavior is well controlled with a schottky style soft recovery bo dy diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v mj avalanche current c 72 a 38 a i d 19 15 130 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c w 3.1 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 maximum junction-to-ambient a g ds soic-8 top view bottom view d d d d s s s g rev 2 : nov 2010 www.aosmd.com page 1 of 6
AO4202 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v i d(on) 130 a 4.4 5.3 t j =125c 6.5 5.5 7 m w g fs 65 s v sd 0.7 1 v i s 4 a c iss 1450 1840 2200 pf c oss 500 720 940 pf c rss 38 63 110 pf r g 0.3 0.7 1.1 w q g (10v) 23 29 35 nc q g (4.5v) 10 13 16 nc q gs 3 4.2 5 nc q gd 2.5 4.2 6 nc t d(on) 6.5 ns t r 7 ns t d(off) 21 ns t f 3.5 ns t rr 12 15 18 ns q rr 25 32 38 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =19a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =19a gate source charge gate drain charge total gate charge m w i s =1a,v gs =0v v ds =5v, i d =19a v gs =4.5v, i d =15a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =19a reverse transfer capacitance i f =19a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 2 : nov 2010 www.aosmd.com page 2 of 6
AO4202 typical electrical and thermal characteristics 17 52 10 0 18 40 0 20 40 60 80 100 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 8 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =15a v gs =10v i d =19a 0 5 10 15 20 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =19a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2.5v 3.5v 5v 6v 10v 3v rev 2 : nov 2010 www.aosmd.com page 3 of 6
AO4202 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =19a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 10 100 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c rev 2 : nov 2010 www.aosmd.com page 4 of 6
AO4202 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75c/w rev 2 : nov 2010 www.aosmd.com page 5 of 6
AO4202 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 2 : nov 2010 www.aosmd.com page 6 of 6
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