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  d a t a sh eet product speci?cation supersedes data of april 1992 file under discrete semiconductors, sc01 1996 jun 19 discrete semiconductors 1N5059 to 1n5062 controlled avalanche rectifiers handbook, 2 columns m3d116
1996 jun 19 2 philips semiconductors product speci?cation controlled avalanche recti?ers 1N5059 to 1n5062 features glass passivated high maximum operating temperature low leakage current excellent stability guaranteed avalanche energy absorption capability available in ammo-pack. description rugged glass package, using a high temperature alloyed construction. this package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. fig.1 simplified outline (sod57) and symbol. 2/3 page (datasheet) mam047 ka    limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v rrm repetitive peak reverse voltage 1N5059 - 200 v 1n5060 - 400 v 1n5061 - 600 v 1n5062 - 800 v v rwm crest working reverse voltage 1N5059 - 200 v 1n5060 - 400 v 1n5061 - 600 v 1n5062 - 800 v v r continuous reverse voltage 1N5059 - 200 v 1n5060 - 400 v 1n5061 - 600 v 1n5062 - 800 v i f(av) average forward current t tp =45 c; lead length = 10 mm; averaged over any 20 ms period; see figs 2 and 4 - 2.0 a t amb =80 c; pcb mounting (see fig.9); averaged over any 20 ms period; see figs 3 and 4 - 0.8 a i fsm non-repetitive peak forward current t = 10 ms half sinewave - 50 a e rsm non-repetitive peak reverse avalanche energy l = 120 mh; t j =t j max prior to surge; inductive load switched off - 20 mj t stg storage temperature - 65 +175 c t j junction temperature see fig.5 - 65 +175 c
1996 jun 19 3 philips semiconductors product speci?cation controlled avalanche recti?ers 1N5059 to 1n5062 electrical characteristics t j =25 c; unless otherwise speci?ed. thermal characteristics note 1. device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 3 40 m m, see fig.9. for more information please refer to the general part of handbook sc01 . symbol parameter conditions min. typ. max. unit v f forward voltage i f =1a; t j =t j max ; see fig.6 -- 0.8 v i f = 1 a; see fig.6 -- 1.0 v v (br)r reverse avalanche breakdown voltage i r = 0.1 ma 1N5059 225 -- v 1n5060 450 -- v 1n5061 650 -- v 1n5062 900 -- v i r reverse current v r =v rrmmax ; see fig.7 -- 1 m a v r =v rrmmax ; t j = 165 c; see fig.7 -- 150 m a t rr reverse recovery time when switched from i f =0.5atoi r =1a; measured at i r = 0.25 a; see fig.10 - 3 - m s c d diode capacitance v r = 0 v; f = 1 mhz; see fig.8 - 50 - pf symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 k/w r th j-a thermal resistance from junction to ambient note 1 100 k/w
1996 jun 19 4 philips semiconductors product speci?cation controlled avalanche recti?ers 1N5059 to 1n5062 graphical data fig.2 maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). a = 1.57; v r =v rrmmax ; d = 0.5. lead length 10 mm. handbook, halfpage 3 2 1 0 mbg044 0 40 200 80 120 160 t tp ( c) i f(av) (a) fig.3 maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). a = 1.57; v r =v rrmmax ; d = 0.5. device mounted as shown in fig.9. handbook, halfpage 0 i f(av) (a) 40 200 1.6 1.2 0.4 0 0.8 80 120 160 t amb ( c) mbg054 fig.4 maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. a=i f(rms) /i f(av) ; v r =v rrmmax ; d = 0.5. handbook, halfpage 0123 4 3 1 0 2 mgc745 2 p (w) i f(av) (a) 1.42 2.5 a = 3 1.57 solid line = v r . dotted line = v rrm ; d = 0.5. fig.5 maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage 0 1200 0 mbh388 100 200 800 400 v r (v) t j ( c) 60 61 59 62
1996 jun 19 5 philips semiconductors product speci?cation controlled avalanche recti?ers 1N5059 to 1n5062 solid line: t j =25 c. dotted line: t j = 175 c. fig.6 forward current as a function of forward voltage; maximum values. handbook, halfpage 0 15 i f 10 5 0 12 mgc735 v f (v) (a) fig.7 reverse current as a function of junction temperature; maximum values. handbook, halfpage 10 3 10 ( m a) i r 2 10 1 10 - 1 200 0 mgc734 40 80 120 160 t j ( o c) max v r =v rrmmax . fig.8 diode capacitance as a function of reverse voltage; typical values. f = 1 mhz; t j =25 c. handbook, halfpage 10 2 mbg031 10 1 1 10 2 10 c d (pf) v r (v) fig.9 device mounted on a printed-circuit board. handbook, halfpage mga200 3 2 7 50 25 50 dimensions in mm.
1996 jun 19 6 philips semiconductors product speci?cation controlled avalanche recti?ers 1N5059 to 1n5062 fig.10 test circuit and reverse recovery time waveform and definition. input impedance oscilloscope: 1 m w , 22 pf; t r 7 ns. source impedance: 50 w ; t r 15 ns. handbook, full pagewidth 10 w 1 w 50 w 25 v dut mam057 + t rr 0.5 0 0.5 1.0 i f (a) i r (a) t 0.25
1996 jun 19 7 philips semiconductors product speci?cation controlled avalanche recti?ers 1N5059 to 1n5062 package outline definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. dimensions in mm. fig.11 sod57. handbook, full pagewidth    3.81 max mbc880 ka 28 min 28 min 4.57 max 0.81 max


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Price & Availability of 1N5059
Newark

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1N5059-TR
33C2820		 Vishay Intertechnologies Avalanche Diode, 2A, 200V, Sod-57; Repetitive Peak Reverse Voltage:200V; Average Forward Current:2A; Diode Configuration:Single; Forward Voltage Max:1.15V; Reverse Recovery Time:4Μs; Forward Surge Current:50A; Diode Case Style:Sod-57Rohs Compliant: Yes |Vishay 1N5059-TR 500: USD0.22
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1N5059GP-E3/54
78K2405		 Vishay Intertechnologies Diode, Standard, 1A, 200V, Do-204Ac-2, Full Reel; Repetitive Peak Reverse Voltage:200V; Average Forward Current:1A; Diode Configuration:Single; Forward Voltage Max:1.2V; Reverse Recovery Time:2Μs; Forward Surge Current:50A Rohs Compliant: Yes |Vishay 1N5059GP-E3/54 50000: USD0.186
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1N5059GP-E3/54
05W7036		 Vishay Intertechnologies Diode, Standard, 1A, 200V, Do-204Ac-2; Repetitive Peak Reverse Voltage:200V; Average Forward Current:1A; Diode Configuration:Single; Forward Voltage Max:1.2V; Reverse Recovery Time:2Μs; Forward Surge Current:50A; No. Of Pins:2Pins Rohs Compliant: Yes |Vishay 1N5059GP-E3/54 5000: USD0.21
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