specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 1 of 7 april 2006 FH101 high dynamic range fet product information the communications ed g e tm product features ? 50 ? 3000 mhz ? low noise figure ? 18 db gain ? +36 dbm oip3 ? +18 dbm p1db ? single or dual supply operation ? lead-free/green/rohs-compliant sot-89 package ? mttf > 100 years applications ? mobile infrastructure ? catv / dbs ? w-lan / ism ? defense / homeland security product description the FH101 is a high dynamic range fet packaged in a low-cost surface-mount package. the combination of low noise figure and high output ip3 at the same bias point makes it ideal for receiver and transmitter applications. the device combines dependable performance with superb quality to maintain mttf values exceeding 100 years at mounting temperatures of +85 c. the FH101 is available in the environmentally-fri endly lead-free/green/rohs- compliant sot-89 package. the device utilizes a high reliability gaas mesfet technology and is targeted fo r applications where high linearity is required. it is well suited for various current and next generation wireless technologies such as gprs, gsm, cdma, and w-cdma. in addition, the FH101 will work for other applications within the 50 to 3000 mhz frequency range such as fixed wireless. functional diagram function pin no. gate 1 drain 3 source 2, 4 specifications (1) dc electrical parameter units min typ max saturated drain current, idss (2) ma 100 140 170 transconductance, gm ms 120 pinch-off voltage, vp (3) v -3 -1.5 rf parameter units min typ max operational bandwidth mhz 50 ? 3000 test frequency mhz 800 small-signal gain, gss db 17 18 max stable gain, gmsg db 23 output ip3 (4) dbm +32 +36 p1db dbm +18 minimum noise figure (5) db 0.77 drain bias v +5 gate bias v 0 1. dc and rf parameters are measured under th e following conditions unless otherwise noted: 25 c with vds = 5v, vgs = 0v, in a 50 system. 2. idss is measured with vgs = 0v. 3. pinch-off voltage is measured with ids = 0.6 ma. 4. 3oip measured with two tones at an output power of +5 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. 5. the minimum noise figure has g s = g l = g opt . absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -55 to +150 c drain to source voltage +6 v gate to source voltage -6 v gate current 4.5 ma rf input power (continuous) 4 db above input p1db junction temperature +220 c operation of this device above any of th ese parameters may cause permanent damage. typical performance (6) parameter units typical frequency mhz 900 1960 2140 s21 db 19 16.5 16.5 s11 db -11 -20 -22 s22 db -10 -9 -9 output p1db dbm +18.8 +18.1 +19.1 output ip3 (4) dbm +36 +36 +36 noise figure db 2.7 3.1 3.0 drain bias 5v @ 140ma gate voltage v 0 6. the device requires appr opriate matching to become unconditionally stable. parameters reflect performance in an appropriate application circuit. ordering information part no. description FH101-g high dynamic range fet (lead-free/green/rohs-com pliant sot-89 package) 1 2 3 4
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 2 of 7 april 2006 FH101 high dynamic range fet product information the communications ed g e tm typical device data data is shown at a biasing configuration of v ds = +5 v, i ds = 140 ma, 25 c for the unmatched device in a 50 ohm system) 0123 frequency (ghz) gain and max. stable gain 12 14 16 18 20 22 24 s21 and msg (db) db(|s(2,1)|) db(gmax()) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 6ghz swp min 0.01ghz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 6ghz swp min 0.01ghz notes: the gain for the unmatched device in 50 ohm system is shown as th e trace in blue color. for a tuned circuit for a particular f requency, it is expected that actual gain will be higher, as high as the maximu m stable gain. the maximum stable gain is shown in the red l ine. the impedance plots are shown from 10 ? 6000 mhz, with mark ers placed at 0.5 ? 6.0 ghz in 0.5 ghz increments. output ip3 vs. temperature 25 30 35 40 45 -40 -15 10 35 60 85 temperature ( c) oip3 ( dbm ) 5v 100% idss output ip3 vs. output power 25 30 35 40 45 024681012 output power per tone (dbm) oip3 ( dbm ) 5v 100% idss noise figure vs. frequency 0 0.5 1 1.5 2 2.5 0.511.52 frequency (ghz) noise fi g ure ( db ) nf (unmatched device) minimum nf s-parameters (v d = +5 v, i d = 140 ma, v g = 0 v, 25 c, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 0.00 -4.08 19.36 176.06 -51.05 87.96 -4.38 -3.34 250 -0.13 -19.64 19.19 164.65 -37.15 78.37 -4.52 -11.51 500 -0.34 -39.41 18.85 150.19 -31.34 66.75 -4.77 -22.43 750 -0.55 -58.33 18.47 136.21 -28.24 55.74 -5.19 -33.05 1000 -0.83 -75.93 17.95 123.24 -26.22 45.25 -5.77 -43.46 1250 -1.16 -93.29 17.47 110.92 -24.88 35.22 -6.44 -53.09 1500 -1.50 -110.36 16.82 99.18 -23.95 26.69 -7.14 -61.08 1750 -1.80 -125.64 16.21 88.19 -23.27 18.17 -7.94 -69.92 2000 -2.03 -140.92 15.65 77.53 -22.81 9.87 -8.84 -78.43 2250 -2.25 -155.64 15.05 67.15 -22.39 2.11 -9.57 -86.41 2500 -2.37 -169.80 14.42 57.62 -22.25 -4.68 -10.43 -93.92 2750 -2.55 177.26 13.74 48.11 -22.08 -11.35 -11.43 -101.88 3000 -2.62 165.93 13.18 39.86 -22.01 -17.16 -12.30 -108.95 noise parameters (v d = +5 v, i d = 140 ma, v g = 0 v, 25 c, calibrated to device leads) freq (mhz) nf,min (db) magopt (mag) angopt (deg) rn 700 0.51 0.574 32.8 0.403 800 0.77 0.535 37.4 0.409 900 0.66 0.508 44.1 0.379 1000 0.74 0.488 50.4 0.365 1100 0.85 0.463 56.4 0.357 1200 0.85 0.458 62.0 0.345 1300 0.95 0.446 67.3 0.335 1400 1.07 0.450 73.3 0.323 device s-parameters and noise are available for download off of the website at: http://www.wj.com
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 3 of 7 april 2006 FH101 high dynamic range fet product information the communications ed g e tm reference design: 35 mhz, 17 db gain frequency mhz 30 35 40 gain db 16.6 16.8 16.8 s11 db -19 -20 -13 s22 db -21 -16 -14 p1db dbm +18 oip3 dbm +34 noise figure db 4.0 3.4 3.2 supply voltage v +5 supply current ma 140 25 30 35 40 45 frequency (mhz) gain / return loss 13 14 15 16 17 18 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=r1 c=68 pf id=c2 c=1000 pf id=c3 c=1000 pf id=c6 c=1000 pf id=l1 l=470 nh id=r6 r=390 ohm id=r7 r=390 ohm id=r8 l=390 nh id=c1 r=3.9 ohm 1 2 net="fh1" +5v notes: 1. circuit board materia l: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 ? . 2. components not shown in the schema tic are either not used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. reference design: 170 mhz, 14 db gain frequency mhz 160 170 180 gain db 14.1 14.2 14.3 s11 db -25 -33 -28 s22 db -21 -23 -26 p1db dbm +18.6 oip3 dbm +36 noise figure db 2.7 2.7 2.7 supply voltage v +5 supply current ma 140 0.12 0.14 0.16 0.18 0.2 0.22 frequency (ghz) gain / return loss (db) 11 12 13 14 15 gain (db) -40 -30 -20 -10 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=r1 c=24 pf id=c2 c=1000 pf id=c3 c=1000 pf id=c6 c=1000 pf id=l1 l=220 nh id=r6 r=240 ohm id=r7 r=240 ohm id=r2 r=4 ohm id=r8 l=82 nh 1 2 net="fh1" +5v notes: 1. circuit board materia l: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 ? . 2. components not shown in the schema tic are either not used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. FH101 FH101
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 4 of 7 april 2006 FH101 high dynamic range fet product information the communications ed g e tm reference design: 260 mhz, 25 db gain frequency mhz 250 260 270 gain db 25.2 25.1 24.9 s11 db -23 -22 -13 s22 db -12 -14 -17 p1db dbm +19.4 oip3 dbm +34.5 noise figure db 1.8 1.9 2.1 supply voltage v +5 supply current ma 140 0.2 0.22 0.24 0.26 0.28 0.3 frequency (ghz) gain / return loss 21 22 23 24 25 26 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=c2 c=1000 pf c=0.2 pf id=r1 l=120 nh id=l1 l=220 nh r=3.3 ohm id=c3 c=1.8e4 pf id=c1 c=1000 pf id=c6 c=1000 pf id=c5 r=1e4 ohm id=r6 r=2000 ohm id=r7 r=2000 ohm 1 2 net="fh1" +5v notes: 1. circuit board materia l: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 ? . 2. components not shown in the schema tic are either not used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. reference design: 460 mhz, 20 db gain frequency mhz 450 460 470 gain db 19.9 19.9 19.9 s11 db -24 -24 -21 s22 db -16 -15 -15 p1db dbm +18.6 oip3 dbm +36 noise figure db 1.95 2.08 2.17 supply voltage v +5 supply current ma 140 0.34 0.38 0.42 0.46 0.5 0.54 0.58 frequency (ghz) gain / return loss 16 17 18 19 20 21 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=c3 c=1000 pf id=c2 c=1000 pf id=r1 l=36 nh id=l1 l=100 nh id=c5 r=5000 ohm id=c1 c=1000 pf id=r6 r=750 ohm id=r7 r=750 ohm id=c6 c=1000 pf id=r2 l=10 nh 1 2 net="fh1" +5v notes: 1. circuit board materia l: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 ? . 2. components not shown in the schema tic are either not used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. FH101 FH101
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 5 of 7 april 2006 FH101 high dynamic range fet product information the communications ed g e tm reference design: 790 mhz, 19 db gain frequency ghz 746 790 835 gain db 19.2 19.4 19.3 s11 db -20 -28 -15 s22 db -22 -23 -22 p1db dbm +19 oip3 dbm +36 noise figure db 2.3 supply voltage v +5 supply current ma 140 0.7 0.75 0.8 0.85 0.9 frequency (ghz) gain / return loss 17 17.5 18 18.5 19 19.5 20 gain (db) -30 -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=c4 c=1e4 pf id=c2 c=100 pf id=c1 c=100 pf id=r6 r=560 ohm id=r7 r=560 ohm id=c3 c=100 pf id=c6 c=100 pf id=l1 l=27 nh id=r1 l=8.2 nh id=c5 l=10 nh id=r2 l=2.2 nh 1 2 net="fh1" +5v notes: 1. circuit board materia l: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 ? . 2. components not shown in the schema tic are either not used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. reference design: 790 mhz, 17 db gain frequency ghz 746 790 835 gain db 17.3 17.4 17.4 s11 db -19 -19 -16 s22 db -22 -22 -21 p1db dbm +19 oip3 dbm +36 noise figure db 2.0 2.1 2.2 voltage v +5 current ma 140 0.7 0.75 0.8 0.85 0.9 frequency (ghz) gain / return loss 14 15 16 17 18 19 gain (db) -25 -20 -15 -10 -5 0 s11, s22 ( db ) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(|s(2,2)|) (r) noise figure vs. frequency 0 1 2 3 4 740 760 780 800 820 840 frequency (mhz) nf (db) 25 c 50 c 90 c id=c1 c=100 pf id=c2 c=100 pf id=c3 c=100 pf id=c4 c=10000 pf id=c6 c=100 pf id=l1 l=33 nh id=r1 l=12 nh id=c5 r=10000 ohm id=r6 r=360 ohm id=r7 r=360 ohm 1 2 net="fh1" +5v notes: 1. circuit board materia l: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 ? . 2. components not shown in the schema tic are either not used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. FH101 FH101
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 6 of 7 april 2006 FH101 high dynamic range fet product information the communications ed g e tm reference design: 880 mhz, 18 db gain frequency ghz 850 875 900 gain db 17.95 17.96 18.00 s11 db -16 -15 -15 s22 db -23 -22 -22 p1db dbm +19 oip3 dbm +36 noise figure db 1.8 1.83 1.85 supply voltage v +5 supply current ma 140 0.7 0.8 0.9 1 frequency (ghz) gain / return loss (db) 14 15 16 17 18 19 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(|s(2,2)|) (r) id=c5 r=1e4 ohm id=c4 c=1e4 pf id=c2 c=100 pf id=c1 c=100 pf id=r6 r=360 ohm id=r7 r=360 ohm id=c3 c=100 pf id=l1 l=33 nh id=c6 c=100 pf id=r1 l=10 nh 1 2 net="fh1" +5v notes: 1. circuit board materia l: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 ? . 2. components not shown in the schema tic are either not used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. reference design: 800 - 2200 mhz, 15 db gain frequency ghz 900 1900 2140 gain db 14.9 16.3 16.4 s11 db -22 -10 -18 s22 db -14 -9.7 -9.6 p1db dbm +19.1 +19.4 +19.1 oip3 dbm +35.7 +37.0 +36.0 noise figure db 2.4 2.6 2.8 supply voltage v +5 supply current ma 140 0.75 1 1.25 1.5 1.75 2 2.25 frequency (ghz) gain / return loss 8 10 12 14 16 18 gain (db) -30 -20 -10 0 10 20 return loss (db) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(|s(2,2)|) (r) c=2 pf id=c3 c=100 pf id=c5 l=6.8 nh id=l1 l=18 nh id=r1 l=2.7 nh id=c1 r=2.2 ohm tlinp id=tl1 z0=50 ohm l=80 mil eeff=3.4 loss=0 f0=0 ghz id=c2 c=100 pf id=c4 c=100 pf id=r6 r=240 ohm id=r7 r=240 ohm id=c6 c=100 pf 1 2 net="fh1" +5v notes: 1. circuit board materia l: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 ? . 2. components not shown in the schema tic are either not used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. 3. a dc blocking capacitor needs to be placed before c1 if dc is present at the input of the circuit. FH101 FH101
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 7 of 7 april 2006 FH101 high dynamic range fet product information the communications ed g e tm FH101-g mechanical information this package is lead-free/green/ro hs-compliant. the plating material on the leads is nipdau. it is compatible with both lead- free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. outline drawing land pattern thermal specifications parameter rating operating case temperature -40 to +85 c thermal resistance, rth (1) 59 c / w junction temperature, tj (2) 126 c 1. the thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. this corresponds to the typical biasing condition of +5v, 140 ma at an 85 c case temperature. a minimum mttf of 1 million hours is achieved for junction temperatures below 160 c. product marking the FH101-g will be marked with an ?fh1g? designator. an alphanumeric lot code (?xxxx-x?) is also ma rked below the part designator on the top surface of the package. a ?1? will be lasermarked in the upper right-hand corner. the obsolete tin-lead package is marked with an ?fh1? designator followed by an alphanumeric lot code. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1b value: passes 500v to <1000v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v to <2000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical fo r the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. mttf vs. gnd tab temperature 1 10 100 1000 60 70 80 90 100 110 tab temperature (c) mttf ( million hrs )
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