inchange semiconductor isc product specification isc silicon pnp power transistor 2SB921 description high collector current:: i c = -7a low collector saturation voltage : v ce(sat) = -0.5v(max)@i c = -4a complement to type 2sd1237 applications designed for large current switching of relay drivers, high- speed inverters, conv erters applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -6 v i c collector current-continuous -7 a i cm collector current-peak -12 a total power dissipation @ t c =25 40 p c total power dissipation @ t a =25 1.75 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB921 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -1ma; r be = -80 v v (br)cbo collector-base breakdown voltage i c = -1ma; i e = 0 -120 v v (br)ebo emitter-base breakdown voltage i e = -1ma; i c = 0 -6 v v ce (sat) collector-emitter saturation voltage i c = -4a; i b = -0.4a b -0.5 v i cbo collector cutoff current v cb = -80v; i e = 0 -0.1 ma i ebo emitter cutoff current v eb = -4v; i c = 0 -0.1 ma h fe-1 dc current gain i c = -1a; v ce = -2v 70 280 h fe-2 dc current gain i c = -4a; v ce = -2v 30 f t current-gain?bandwidth product i c = -1a; v ce = -5v 20 mhz switching times t on turn-on time 0.2 s t stg storage time 0.7 s t f fall time r l = 1.67 , v cc = -50v i c = -2a; i b1 = -i b2 = -0.2a 0.2 s ? h fe- 1 classifications q r s 70-140 100-200 140-280 isc website www.iscsemi.cn 2
|
