QS5U33 transistor 1/4 4v drive pch+sbd mosfet QS5U33 z structure z dimensions (unit : mm) silicon p-channel mosfet schottky barrier diode z features 1) the QS5U33 combines pch mosfet with a schottky barrier diode in tsmt5 package. 2) low on-state resistance with fast switching. 3) low voltage drive (4v). 4) built-in schottky barrier diode has low forward voltage. z applications load switch, dc/dc conversion z packaging specifications z equivalent circuit QS5U33 tr 3000 type package code taping basic ordering unit (pieces) (1)gate (2)source (3)anode (4)cathode (5)drain ? 2 ? 1 (1) (2) (3) (5) (4) ? a protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltages are exceeded. ? 1 esd protection diode ? 2 body diode each lead has same dimensions tsmt5 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 (1) (3) (2) (4) (5) 2.8 1.6 0.4 1.9 2.9 0.95 0.95 abbreviated symbol : u33
QS5U33 transistor 2/4 z absolute maximum ratings (ta=25 c) ? 1 ? 1 ? 3 ? 3 ? 3 ? 2 parameter v v dss symbol ? 30 v v gss 20 a i d 2.0 a i dp 8.0 a i s ? 0.75 a i sp ? 8.0 p d 0.9 c tch 150 v v rm 25 v v r 20 a i f 1.0 a i fsm 3.0 p d 0.7 c tj 150 p d 1.25 c tstg ? 55 to + 150 limits unit w / total w /element w /element ? 1 pw 10 s, duty cycle 1% ? 2 60hz ? 1cyc. ? 3 mounted on a ceramic board. drain-source voltage gate-source voltage drain current source current (body diode) power dissipation channel temperature repetitive peak reverse voltage reverse voltage forward current forward current surge peak power dispation junction temperature total power dissipation range of strage temperature continuous pulsed continuous pulsed < mosfet > parameter symbol limits unit < di > parameter symbol limits unit < mosfet and di > z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 10 av gs = 20v, v ds = 0v v dd ? 15 v v dd ? 15 v typ. max. unit conditions v (br) dss ? 30 ?? vi d = ? 1ma, v gs = 0v i dss ??? 1 av ds = ? 30v, v gs = 0v v gs (th) ? 1.0 ?? 2.5 v v ds = ? 10v, i d = ? 1ma ? 95 135 m ? i d = ? 2a, v gs = ? 10v r ds (on) ? 145 205 m ? i d = ? 1a, v gs = ? 4.5v ? 160 225 m ? i d = ? 1a, v gs = ? 4.0v 1.4 ?? sv ds = ? 10v, i d = ? 1a c iss ? 310 ? pf v ds = ? 10v c oss ? 55 45 ? pf v gs = 0v c rss ? 7 ? pf f=1mhz t d (on) ? 6 ? ns i d = ? 1a t r ? 25 ? ns t d (off) ? 6 ? ns v gs = ? 10v t f ? 3.4 ? ns r l 15 ? q g ? 1.0 ? nc r g 10 ? r l 7.5 ? r g 10 ? q gs ? 1.3 ? nc v gs = ? 5v q gd ?? nc i d = ? 2a ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-starte resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge < mosfet > ? pulsed i s = ? 0.75v , v gs = 0v parameter symbol min. typ. max. unit conditions ? 1.2 v sd ?? v forward voltage < mosfet > body diode (source-drain) i f = 1.0v parameter symbol min. typ. max. unit conditions 0.45 v f ?? v forward voltage < di > v r = 20v 200 i r ?? a reverse current
QS5U33 transistor 3/4 z electrical characteristic curves fig.1 typical transfer characteristics 0 0.5 1.0 0.001 0.0001 0.1 1 0.01 10 1.5 gate ? source voltage : ? v gs [ v ] drain current : ? i d (a) 2.0 2.5 3.0 3.5 4.0 ta = 125 c ? 25 c 75 c 25 c v ds = ? 10v pulsed fig.2 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance r ds ( on )[ m ?] vs.drain current v gs = ? 10v pulsed ta = 125 c ? 25 c 75 c 25 c fig.3 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance r ds ( on )[ m ?] vs.drain current v gs = ? 4.5v pulsed ta = 125 c ? 25 c 75 c 25 c fig.4 static drain ? source on ? state 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance r ds ( on )[ m ?] resistance vs.drain ? current ta = 125 c ? 25 c 75 c 25 c v gs = ? 4.0v pulsed 10 015 5 0 static drain ? source on ? state resistance gate ? source voltage : ? v gs [ v ] fig.5 static drain ? source on ? state 50 100 150 200 250 300 350 400 r ds ( on ) [m ? ] vs.gate ? source voltage resistance ta=25 c pulsed i d= ? 1a ? 2a 0 0.5 1.0 1.5 source ? drain voltage : ? v sd [ v ] fig.6 reverse drain current 0.01 reverse drain current : ? i dr [ a ] 0.1 10 1 vs. source-drain current ta = 125 c ? 25 c 75 c 25 c v gs =0v pulsed 0.01 0.1 1 10 100 drain ? source voltage : ? v ds [ v ] fig.7 typical capactitance 10 100 1000 vs.drain ? source voltage capacitance : c [ pf ] c iss c oss c rss ta=25 c f=1mhz v gs =0v 0.01 0.1 1 10 drain current : ? i d [ a ] fig.8 switching characteristics 1 10 1000 100 t d ( off ) t d ( on ) t r t f switching time : t [ ns ] ta=25 c v dd = ? 15v v gs = ? 10v r g =10 ? pulsed fig.9 dynamic input characteristics 01 0 4 8 10 6 total gate charge : qg [ nc ] gate-source voltage: -v gs [ v ] 2345 2 6 ta=25 c v dd = ? 15v i d = ? 1a r g =10 ? pulsed
QS5U33 transistor 4/4 forward voltage : v f [ v ] fig.10 forward temperature characteristics forward current : i f [ ma ] 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 ta = 125 c ? 20 c 75 c 25 c reverse voltage : v r [ v ] fig.11 reverse temperature characteristics reverse current : i r [ a ] 0.0001 0.001 0.01 0.1 100 10 1 010203040 125 c 75 c 25 c ? 20 c
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2007 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21, saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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