december 200 1 preliminary 200 1 fairchild semiconductor corporation FDZ2552P rev. d (w) fdz255 2p dual p - channel 2.5v specified powertrench bga mosfet general description combining fairchild ?s advanced 2.5v specified powertrench process with state - of - the - art bga packaging, the fdz 2552p minimizes both pcb space and r d s ( o n) . this dual bga mosfet embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra - low profile packaging, low gate charge , and low r ds(on) . applications battery management load switch battery protection features ? 5.5 a, ? 20 v . r ds(on) = 45 m w @ v gs = ? 4.5 v r ds(on) = 75 m w @ v gs = ? 2.5 v occupies only 0.10 cm 2 of pcb area : 1/3 the area of so - 8 ultra - thin package: less than 0. 70 mm height when mounted to pcb outstanding thermal transfer characteristics: significantly better than so - 8 ultra - low q g x r ds(on) figure - of - merit high power and current handling capability q 2 q 1 p i n 1 g s d d s s s d s s s s g s s d d d bottom p i n 1 f 2 5 5 2 top s s g g d q1 q2 absolute maximum ratings t a =25 o c unless otherwise note d symbol parameter ratings units v dss drain - source voltage ? 20 v v gss gate - source voltage 12 v i d drain current ? continuous (note 1a) ? 5.5 a ? pulsed ? 20 p d power dissipation (steady state) (n ote 1a) 2.1 w t j , t stg operating and storage junction temperature range ? 55 to + 150 c thermal characteristics r q ja thermal resistance, junction - to - ambient (note 1a) 60 c/w r q jb thermal resistance, junction - to - ball (note 1) 6.3 c/w r q jc t hermal resistance, junction - to - case (note 1) 0.6 c/w package marking and ordering information device marking device reel size tape width quantity 2552 p FDZ2552P 7?? 12mm 3000 units fdz 2552p
FDZ2552P rev d (w) elect rical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain ? source breakdown voltage v gs = 0 v, i d = ? 250 m a ? 20 v d bv dss d t j breakdown voltage temperature coefficient i d = ? 250 m a, referenced to 25 c ? 15 mv/ c i dss zero gate voltage drain current v ds = ? 16 v, v gs = 0 v ? 1 m a i gssf gate ? body leakage , forward v gs = ? 12 v, v ds = 0 v ? 100 na i gssr gate ? body leakage , reverse v gs = 12 v , v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ? 250 m a ? 0. 6 ? 1 .0 ? 1.5 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = ? 250 m a, ref erenced to 25 c 3 mv/ c r ds(on) static drain ? source on ? resistance v gs = ? 4.5 v, i d = ? 5.5 a v gs = ? 2.5 v, i d = ? 4 .5 v gs = ? 4.5 v, i d = ? 5.5 , t j =125 c 3 8 62 48 45 75 65 m w i d(on) on ? state drain current v gs = ? 4.5 v, v ds = ? 5 .0 v ? 2 0 a g fs forward transconductance v ds = ? 5 v, i d = ? 5 .5 a 15 s dynamic characteristics c iss input capacitance 987 pf c oss output capacitance 278 pf c rss reverse transfer capacitance v ds = ? 10 v, v gs = 0 v, f = 1.0 mhz 111 pf switching characteristics (note 2) t d(on) turn ? on delay time 10 20 ns t r turn ? on rise time 10 20 ns t d(off) turn ? off delay time 35 56 ns t f turn ? off fall time v dd = ? 6 v, i d = ? 1 a, v gs = ? 4.5 v, r gen = 6 w 34 54 ns q g total gate charge 9 1 3 nc q gs gate ? source charge 2 nc q gd gate ? drain charge v ds = ? 10 v, i d = ? 5.5 a, v gs = ? 4.5 v 3 nc drain ? source diode characteristics and maximum ratings i s maximum continuous drain ? source diode forward current ? 1.8 a v sd drain ? source diode forward voltage v gs = 0 v, i s = ? 1.8 a (note 2) ? 0.7 ? 1.2 v notes: 1. r q ja is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of fr - 4 material. the thermal resistance from the junction to the circuit board side of the solder ball, r q jb , is defined for reference. for r q jc , the thermal reference point for the case is defined as the top surface of the copper chip carrier. r q jc and r q jb are guaranteed by design while r q ja is determined by the user's board design. (a). r q ja = 60c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5? x 1.5? x 0.062? thick pcb (b). r q ja = 108c/w when mounted on a minimum pad of 2 oz copper 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% fdz 2552p
FDZ2552P rev d (w) dimensional outline and pad layout notes: unless othewise specified a) all dimensions are in millimeters. f e d c b a 3 1 2 3 b a 1 d c e f 2 2.50 4.00 0.25 0.76 0.51 seating plane 0.65 3.25 ? 0.30 0.65 1.30 0.65 1.30 3.25 0.65 top view side view front view bottom view recommended land pattern index slot (hidden) index slot solder ball, ? 0.25 gate 1 gate 2 l c l c c l solder ball, ? 0.25 c l f2552 date / vendor code d d d d d d s1 s1 s1 s1 s1 s2 s2 s2 s2 s2 s1 = source 1 s2 = source 2 d = drain fdz 2552p
FDZ2552P rev d (w) typical characteristics 0 5 10 15 20 25 0 1 2 3 4 -v ds , drain-source voltage (v) -i d , drain current (a) -3.0v -3.5v -2.5v -2.0v v gs = - 4.5v 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.0v -3.5v -3.0v -4.5v -2.5v figure 1. on - region characteristics. figure 2. on - resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -5.5a v gs = -4.5v 0 0.05 0.1 0.15 0.2 1.5 2 2.5 3 3.5 4 4.5 5 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -2.75 a t a = 125 o c t a = 25 o c figure 3. on - resis tance variation with temperature. figure 4. on - resistance variation with gate - to - source voltage. 0 5 10 15 20 25 1 1.5 2 2.5 3 3.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltag e variation with source current and temperature. fdz 2552p
FDZ2552P rev d (w) typical characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -5.5a v ds = -5v -15v -10v 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = -4.5v single pulse r q ja = 108 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 108c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) + r q ja r q ja = 108 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transi ent thermal response curve. thermal characterization performed using the conditions described in note 1 b . transient thermal response will change depending on the circuit board design. fd z 2552p
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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