smd type ic www.kexin.com.cn 1 smd type ic dual n-channel 80-v (d-s) mosfet KI4980DY features absolute maximum ratings ta = 25 symbol rating unit drain-source voltage 80 v gs 20 continuous drain current (t j = 150 )* t a =25 3.7 t a =70 2.9 pulsed drain current i dm 30 continuous source current (diode conduction) * i s 1.7 a t a =25 2.0 t a =70 1.3 t j ,t stg -55to150 maximum junction-to-ambient* r thja 62.5 /w * surface mounted on fr4 board, t 10 sec. i d parameter operating junction and storage temperature range a p d w maximum power dissipation * v ds v gate-source voltage
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 2 v gate-body leakage i gss v ds =0v,v gs = 20 v 100 na v ds =80v,v gs =0v 1 v ds =80v,v gs =0v,t j =55 20 on-state drain current * i d(on) v ds =5v,v gs =10v 20 a v gs =10v,i d =3.7 a 0.062 0.075 v gs =6.0v,i d = 3.2 a 0.071 0.095 forward transconductance* g fs v ds =15v,i d =3.7a 12 s schottky diode forward voltage* v sd i s =1.7a,v gs =0v 1.2 v total gate charge q g 15 30 nc gate-source charge q gs 4nc gate-drain charge q gd 3.2 nc gate resistance r g 5.1 turn-on delay time t d(on) 10 20 ns rise time t r v dd =40v,r l =40 10 20 ns turn-off delay time t d(off) i d =1a,v gen =10v,r g =6 30 60 ns fall time t f 10 20 ns source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 75 110 ns * pulse test; pulse width 300 s, duty cycle 2%. v ds =40v,v gs = 10v, i d =3.7a a i dss zero gate voltage drain current r ds(on) drain-source on-state resistance* KI4980DY
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