sot-89-3l 1. base 2. collector 3. emitter features z low collector-emitter saturation voltage z high breakdown voltage marking: A92 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -310 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -305 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -5 v i cbo v cb =-200v,i e =0 -0.25 a v ce =-200v,i b =0 -0.25 a collector cut-off current i ceo v ce =-300v,i b =0 -5 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a h fe(1) v ce =-10v, i c =-1ma 60 h fe(2) v ce =-10v, i c =-10ma 100 300 dc current gain h fe(3) v ce =-10v, i c =-80ma 60 collector-emitter saturation voltage v ce(sat) i c =-20ma,i b =-2ma -0.2 v base-emitter saturation voltage v be(sat) i c =-20ma,i b =-2ma -0.9 v transition frequency f t v ce =-20v,i c =-10ma,f=30mhz 50 mhz symbol parameter value unit v cbo collector-base voltage -310 v v ceo collector-emitter voltage -305 v v ebo emitter-base voltage -5 v i c collector current -500 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 A92 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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