RN1910AFS, rn1911afs 2007-11-01 1 toshiba transistor silicon npn epitaxial type (pct process) (transisto r with built-in bias resistor) RN1910AFS, rn1911afs switching, inverter circuit, interface circuit and driver circuit applications ? two devices are incorporated into a fine-pitch, small-mold (6-pin) package. ? incorporating a bias resistor into a transistor reduces the parts count. reducing the parts count enables t he manufacture of ever more compact equipment and lowers assembly costs. ? complementary to the rn2910afs/rn2911afs equivalent circuit and bias resistor values absolute maximum ratings (ta = 25c) (q1, q2 common) characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 80 ma collector power dissipation p c (note 1) 50 mw junction temperature t j 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating electrical characteristics (ta = 25c) (q1, q2 common) characteristic symbol test condition min typ. max unit collector cutoff current i cbo v cb = 50 v, i e = 0 ? ? 100 na emitter cutoff current i ebo v eb = 5 v, i c = 0 ? ? 100 na dc current gain h fe v ce = 5 v, i c = 1 ma 120 ? 700 collector-emitter saturation voltage v ce (sat) i c = 5 ma, i b = 0.25 ma ? ? 0.15 v collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz ? 0.7 ? pf RN1910AFS 3.76 4.7 5.64 input resistor rn1911afs r1 ? 8 10 12 k unit: mm jedec D jeita D toshiba 2-1f1d weight: 0.001 g (typ.) 6 5 4 12 3 q1 q2 r1 c e equivalent circuit (top view) fs6 1. emitter1 2. base1 3. collector2 4. emitter2 5. base2 6. collector1 (e1) (b1) (c2) (e2) (b2) (c1) 0.150.05 0.10.05 6 0.80.05 1.00.05 0.70.05 1 2 0.10.05 0.35 0.35 3 1.00.05 0.10.05 5 4 0.48 +0.02 -0.04
RN1910AFS, rn1911afs 2007-11-01 2 ic - vi (on) 0.1 1 10 100 0.1 1 10 100 input voltage vi (on) (v) collector current ic (ma) common emitter vce= 0.2v 25 -25 ic - vi (off) 10 100 1000 10000 0.2 0.4 0.6 0.8 1 1.2 input voltage vi (off) (v) collector current ic (ua) common emitter vce = 5v 25 -25 ta = 100c ta = 100c RN1910AFS RN1910AFS ic - vi (on) 0.1 1 10 100 0.1 1 10 100 input voltage vi (on) (v) collector current ic (ma) common emitter vce = 0.2v 25 -25 ic - vi (off) 10 100 1000 10000 0.2 0.4 0.6 0.8 1 1.2 input voltage vi (off) (v) collector current ic (ua) common emitter vce = 5v 25 -25 rn1911afs rn1911afs ta = 100c ta = 100c
RN1910AFS, rn1911afs 2007-11-01 3 hfe - ic 10 100 1000 0.1 1 10 100 collector current ic (ma) dc current gain hfe common emitter vce = 5v -25 25 vce (sat) - ic 0.01 0.1 1 0.1 1 10 100 collector current ic (ma) collector-emitter saturation voltage vce (sat) ( v) common emitter ic / ib = 20 25 -25 ta = 100c ta = 100c RN1910AFS RN1910AFS hfe - ic 10 100 1000 0.1 1 10 100 collector current ic (ma) dc current gain hfe common emitter vce = 5v -25 25 vce (sat) - ic 0.01 0.1 1 0.1 1 10 100 collector current ic (ma) collector-emitter saturation voltage vce (sat) ( v) common emitter ic/ ib = 20 25 -25 rn1911afs rn1911afs ta = 100c ta = 100c
RN1910AFS, rn1911afs 2007-11-01 4 type name marking RN1910AFS rn1911afs type name c9 1 2 3 4 5 6 type name cf 1 2 3 4 5 6
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and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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