AOWF240 40v n-channel mosfet general description product summary v ds i d (at v gs =10v) 83a r ds(on) (at v gs =10v) < 2.6m w r ds(on) (at v gs =4.5v) < 3.5m w 100% uis tested 100% r g tested symbol v ds drain-source voltage 40 parameter absolute maximum ratings t a =25c unless otherwise noted 40v the AOWF240 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance. power losses are minimized due to an extremely low combination of r ds(on) and crss. v maximum units g d s top view to-262f bottom view g d s g d s v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc parameter typ max t c =25c 2.1 16.7 t c =100c junction and storage temperature range -55 to 175 t a =25c c/w r q ja 11 47 400 15 thermal characteristics units maximum junction-to-ambient a a t a =25c pulsed drain current c continuous drain current i d 83 59 v 20 gate-source voltage drain-source voltage 40 c i dsm a t a =70c continuous drain current 231 21 a 68 power dissipation a p dsm w t a =70c 1.3 t c =25c t c =100c w 33.3 power dissipation b p d avalanche energy l=0.1mh c mj avalanche current c 16 v maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.7 60 4.5 rev 0 : dec. 2011 www.aosmd.com page 1 of 6
AOWF240 symbol min typ max units bv dss 40 v v ds =40v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1 1.7 2.2 v i d(on) 400 a 2.1 2.6 t j =125c 3.3 4.1 2.7 3.5 m w g fs 78 s v sd 0.65 1 v i s 40 a c iss 3510 pf c oss 1070 pf c rss 68 pf r g 0.5 1 1.5 w q g (10v) 49 72 nc q g (4.5v) 22 32 nc q gs 9 nc q gd 7 nc t d(on) 11 ns r ds(on) v gs =4.5v, i d =20a maximum body-diode continuous current input capacitance output capacitance dynamic parameters m w i s =1a,v gs =0v v ds =5v, i d =20a forward transconductance diode forward voltage static drain-source on-resistance total gate charge reverse transfer capacitance v gs =0v, v ds =20v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =20v, i d =20a gate source charge gate drain charge turn-on delaytime electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a i dss m a v ds =v gs, i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current t r 10 ns t d(off) 38 ns t f 11 ns t rr 21 ns q rr 58 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on rise time turn-off delaytime i f =20a, di/dt=500a/ m s v gs =10v, v ds =20v, r l =1 w , r gen =3 w turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximum t emperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0 : dec. 2011 www.aosmd.com page 2 of 6
AOWF240 typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 3.5v 4.5v 10v 18 40 figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 2 4 6 8 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 0 : dec. 2011 www.aosmd.com page 3 of 6
AOWF240 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 500 1000 1500 2000 2500 3000 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - c oss c rss v ds =20v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 18 40 figure 10: single pulse power rating junction - to - case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 9: maximum forward biased safe operating area (note f) r q jc =4.5 c/w rev 0 : dec. 2011 www.aosmd.com page 4 of 6
AOWF240 typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 50 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 20 40 60 80 100 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) 1 10 100 1000 0.01 1 100 10000 power (w) pulse width (s) t a =25 c 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 18 40 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d t case ( c) figure 14: current de-rating (note f) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) r q ja =60 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse rev 0 : dec. 2011 www.aosmd.com page 5 of 6
AOWF240 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0 : dec. 2011 www.aosmd.com page 6 of 6
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