inchange semiconductor isc product specification isc silicon npn power transistor 2SC4162 description collector-emitter breakdown voltage- : v (br)ceo = 400v(min) high switching speed wide area of safe operation applications designed for switching regulator and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cm collector current-peak 20 a p c collector power dissipation @t c =25 35 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4162 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 500 v v (br)ceo collector-emitter breakdown voltage i c = 5ma; r be = 400 v v cex(sus) collector-emitter sustaining voltage i c = 4.5a; i b1 = 0.45a, i b2 = -1.8a, l= 500 h, clamped 400 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 6a; i b = 1.6a b 0.8 v v be (sat) base-emitter saturation voltage i c = 6a; i b = 1.6a b 1.5 v i cbo collector cutoff current v cb = 400v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 1.6a; v ce = 5v 15 50 h fe-2 dc current gain i c = 8a; v ce = 5v 10 h fe-3 dc current gain i c = 10ma; v ce = 5v 10 c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 120 pf f t current-gain?bandwidth product i c = 1.6a; v ce = 10v 20 mhz switching times t on turn-on time 0.5 s t stg storage time 2.5 s t f fall time i c = 7a; i b1 = 1.4a; i b2 = -2.8a; v cc = 200v; r l = 28.6 0.3 s ? h fe-1 classifications l m n 15-30 20-40 30-50 isc website www.iscsemi.cn 2
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