APTGU180U120D APTGU180U120D ? rev 0 july, 2004 apt website ? http:/ / www.advancedpower.com 1 ? 6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 250 i c continuous collector current t c = 80c 180 i cm pulsed collector current t c = 25c 630 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1041 w rbsoa reverse bias safe operating area t j = 150c 630a @ 960v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. ck ek g ec c ck e g ek v ces = 1200v i c = 180a @ tc = 80c applicatio n ? zero current switching resonant mode features ? power mos 7 ? punch through (pt) igbt - low co nd uctio n loss - ul tra fast tail current shutoff - low gate c harge - switching frequency capability in the 50khz range - soft recovery diodes - low diode vf ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile single s witch with series diodes p t igbt power module
APTGU180U120D APTGU180U120D ? rev 0 july, 2004 apt website ? http:/ / www.advancedpower.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 750a 1200 v t j = 25c 750 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 7500 a t j = 25c 3.3 3.9 v ce(on) collector emitter on voltage v ge =15v i c = 180a t j = 125c 3.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 6ma 3 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 250 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 19.4 c oes output capacitance 1.48 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.18 nf q g total gate charge 900 q ge gate ? emitter charge 126 q gc gate ? collector charge v ge = 15v v bus = 600v i c = 180a 372 nc t d(on) tur n-o n delay ti me 16 t r rise time 20 t d(off) turn-off delay time 94 t f fall time 40 ns e on1 turn-on switching energy 4.5 e on2 tur n-o n switchi ng energy x 7.8 e off turn-off switching energy y inductive switching (25c) v ge = 15v v bus = 600v i c = 180a r g = 0.8 ? 4.08 mj t d(on) tur n-o n delay ti me 16 t r rise time 20 t d(off) turn-off delay time 147 t f fall time 75 ns e on1 turn-on switching energy 4.5 e on2 tur n-o n switchi ng energy x 12.8 e off turn-off switching energy y inductive switching (125c) v ge = 15v v bus = 600v i c = 180a r g = 0.8 ? 10.5 mj x e on2 includes diode reverse recovery y in accordance with jedec standard jesd24-1 series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1200 i f(a v) maximum average forward current 50% duty cycle tc = 70c 200 a i f = 200a 2 2.5 i f = 400a 2.3 v f diode forward voltage i f = 200a t j = 125c 1.8 v t j = 25c 420 t rr reverse recovery time i f = 200a v r = 800v di/dt =400a/s t j = 125c 580 ns t j = 25c 2.5 q rr reverse recovery charge i f = 200a v r = 800v di/dt =400a/s t j = 125c 10.7 c
APTGU180U120D APTGU180U120D ? rev 0 july, 2004 apt website ? http:/ / www.advancedpower.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.12 r thjc junction to case diode 0.32 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g package outline
APTGU180U120D APTGU180U120D ? rev 0 july, 2004 apt website ? http:/ / www.advancedpower.com 4 ? 6 typical performance curve output characteristics (v ge =15v) t c =25c t c =125c 0 80 160 240 320 400 480 012345 ic, collector current (a) v c e , collector to emitter volta g e ( v ) 250s pulse test < 0.5% dut y c y cle gate charge v ce =240v v ce =600v v ce =960v 0 2 4 6 8 10 12 14 16 18 0 120 240 360 480 600 720 840 960 gate charge (nc) v ge , gate to emitter voltage (v) i c = 180a t j = 25c 0 50 100 150 200 250 300 350 400 -50 0 50 100 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) breakdown voltage vs junction temp. collector to emitter breakdown voltage (normalized) i c =360a i c =180a i c =9 0a 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 25 50 75 100 125 t j , junction temperature (c) on state voltage vs junction temperature v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle v ge = 15v i c =360a i c =180a i c =90a 0 1 2 3 4 5 6 6 8 10 12 14 16 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) t c =25c t c =125c 0 80 160 240 320 400 480 012345 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse t est < 0. 5% dut y c y cle transfer characteristics t j =25c t j =-55c t j =1 25 c 0 80 160 240 320 400 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle
APTGU180U120D APTGU180U120D ? rev 0 july, 2004 apt website ? http:/ / www.advancedpower.com 5 ? 6 eon2, 360a eoff, 360a eon2, 180a eoff, 180a eon2, 90a eoff, 90a 0 4 8 12 16 20 24 28 32 0 255075100125 t j , junction temperature (c) switching energy losses (mj) switching energy losses vs junction temp. v ce = 600v v ge = 1 5v r g = 0.8 ? eon2, 360a eoff, 360a eon2, 180a eoff, 180a eon2, 90a eoff, 90a 0 8 16 24 32 40 48 0 5 10 15 20 25 30 gate resistance (ohms) switching energy losses (mj) switching energy losses vs gate resistance v ce = 600v v ge = 15v t j = 125c t j = 25c 0 4 8 12 16 20 24 0 50 100 150 200 250 300 350 400 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current t j =125c v ce = 600v v ge = 15v r g = 0.8 ? t j =25c, v ge =15v t j =25c, v ge =10v t j =125c, v ge =15v t j =125c, v ge =10v 0 4 8 12 16 20 24 28 32 0 50 100 150 200 250 300 350 400 i ce , collector to emitter current (a) turn-on energy loss vs collector current e on 2 , turn-on energy loss (mj) v ce = 600v r g = 0.8 ? t j = 25c 0 20 40 60 80 100 0 50 100 150 200 250 300 350 400 i ce , collector to emitter current (a) tf, fall time (ns) t j =125c current fall time vs collector current v ce = 600v, v ge = 15v, r g = 0.8 ? v ge =15v v ge =10v 0 10 20 30 40 50 60 0 50 100 150 200 250 300 350 400 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 600v r g = 0.8 ? v ge =15v, t j =25c v ge =10v, t j =25c v ge =15v, t j =125c v ge =10v, t j =125c 0 40 80 120 160 200 0 50 100 150 200 250 300 350 400 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 600v r g = 0.8 ? 0 10 20 30 40 0 50 100 150 200 250 300 350 400 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current v ge =1 0v v ge =15v t j = 25c v ce = 600v r g = 0.8 ?
APTGU180U120D APTGU180U120D ? rev 0 july, 2004 apt website ? http:/ / www.advancedpower.com 6 ? 6 hard switching zcs 0 25 50 75 100 125 40 80 120 160 200 240 i c , collector current (a) fmax, operating frequency (khz) operating frequency vs collector current v ce = 800v d = 50% r g = 0.8 ? t j = 125c t j = 75c maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 rectangular pulse duration (seconds) thermal impedance (c/w) 0 100 200 300 400 500 600 700 0 200 400 600 800 1000 i c , collector cur rent (a) v ce , collector to emitter voltage (v) minimum switching safe operating area cies cres coes 10 100 1000 10000 100000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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