sot-89-3l 1. base 2. collector 3. emitter features z small flat package z high voltage switching application z high voltage z high transition frequency maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 200 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 150 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =200v,i e =0 100 na emitter cut-off current i ebo v eb =5v,i c =0 100 na dc current gain h fe v ce =5v, i c =10ma 70 240 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.5 v base-emitter voltage v be v ce =5v, i c =30ma 1 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 5 pf transition frequency f t v ce =30v,i c = 10ma 120 mhz classification of h fe rank o y range 70 C 140 120 C 240 marking ao ay symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 5 v i c collector current 50 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 KTC4372 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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